30N60A4D Fairchild Semiconductor, 30N60A4D Datasheet
30N60A4D
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30N60A4D Summary of contents
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... SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... 150 - 38 - 280 - 600 - 240 o = 125 15V, - 180 - 58 - 280 - 1000 - 450 - 2.2 UNITS N-m N-m MAX UNITS - V µ A 250 2.8 mA 2.7 V 2.0 V 7.0 V ± 250 270 nC 360 µ µ µ J 350 - 200 µ µ J 1200 µ J 750 2.5 V HGT1N30N60A4D Rev. B ...
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... COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA Ω 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS 0.49 C/W o 2.0 C/W ON2 500 600 700 900 800 700 600 500 400 300 200 14 15 HGT1N30N60A4D Rev. B ...
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... 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 100 R = 3Ω 200µ 390V 125 15V 12V 12V COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT o C 2.0 2 15V HGT1N30N60A4D Rev. B ...
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... 400V CE 10.0 7 200V CE 5.0 2 100 150 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 200µ 390V TOTAL ON2 OFF 60A 30A GATE RESISTANCE (Ω) G FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE 50 60 200 250 = 15V I = 15A CE 100 300 HGT1N30N60A4D Rev. B ...
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... 125 125 125 FORWARD CURRENT (A) EC FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT 1400 V = 390V CE 1200 o 125 40A F 1000 800 600 400 200 0 200 400 600 di /dt, RATE OF CHANGE OF CURRENT (A/µs) EC CURRENT HGT1N30N60A4D Rev 15V 125 20A 40A 20A F 800 1000 ...
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... FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Unless Otherwise Specified (Continued RECTANGULAR PULSE DURATION (s) 1 HGT1N30N60A4D DIODE TA49373 L = 200µ 390V DUTY FACTOR PEAK θJC θ 90% 10 ON2 E OFF V CE 90% 10 d(OFF FIGURE 25. SWITCHING TEST WAVEFORMS d(ON)I HGT1N30N60A4D Rev. B ...
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... JM d(OFF )/( The MAX2 D C OFF ON2 ) is defined )/ 50% duty factor was used (Figure 3) and D ) are approximated by C )/2. CE are defined in the switching waveforms is the integral of the instantaneous ON2 during turn-on and E is the CE OFF during 0). CE HGT1N30N60A4D Rev θJC ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ CMOS EnSigna TM FACT™ www.DataSheet4U.com FACT Quiet Series™ ...