FA57SA50 Vishay Semiconductors, FA57SA50 Datasheet

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FA57SA50

Manufacturer Part Number
FA57SA50
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Notes
(1)
(2)
(3)
Document Number: 94548
Revision: 31-Jul-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current at V
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Starting T
I
SD
≤ 57 A, dI/dt ≤ 200 A/µs, V
J
R
V
= 25 °C, L = 446 µH, R
DS(on)
DSS
I
D
SOT-227
GS
DD
10 V
≤ V
g
= 25 Ω, I
(BR)DSS
For technical questions, contact: ind-modules@vishay.com
, T
0.08 Ω
500 V
AS
57 A
Power MOSFET, 57 A
J
= 57 A (see fig. 12)
≤ 150 °C
SYMBOL
dV/dt
T
E
E
I
I
DM
J
AR
V
V
AS
AR
, T
P
I
ISO
GS
D
D
(1)
(1)
(2)
(1)
Stg
HEXFET
(3)
T
T
T
M4 screw
C
C
C
= 25 °C
= 100 °C
= 25 °C
TEST CONDITIONS
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low gate charge device
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Totally lead (Pb)-free
• Designed for industrial level
DESCRIPTION
Third Generation HEXFET
HPP provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance throughout
the industry.
®
Vishay High Power Products
- 55 to + 150
®
Power MOSFETs from Vishay
MAX.
± 20
62.5
228
625
725
5.0
2.5
1.3
57
36
57
10
FA57SA50LCP
www.vishay.com
UNITS
W/°C
V/ns
Nm
mJ
mJ
°C
kV
W
A
V
A
RoHS
COMPLIANT
1

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FA57SA50 Summary of contents

Page 1

... ( ( ( (3) dV/ Stg V ISO M4 screw = 57 A (see fig. 12) AS ≤ 150 ° For technical questions, contact: ind-modules@vishay.com FA57SA50LCP Vishay High Power Products RoHS COMPLIANT ® Power MOSFETs from Vishay MAX. UNITS 228 625 W 5.0 W/°C ± 725 62 V/ 150 °C 2 ...

Page 2

... FA57SA50LCP Vishay High Power Products THERMAL RESISTANCE PARAMETER Junction to case Case to sink, flat, greased surface ELECTRICAL CHARACTERISTCS (T PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current Gate to source forward leakage ...

Page 3

... Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics Document Number: 94548 Revision: 31-Jul-08 ® HEXFET Power MOSFET ° 10 100 ° 10 100 = 50V For technical questions, contact: ind-modules@vishay.com FA57SA50LCP Vishay High Power Products 3.0 57A 2.5 2.0 1.5 1.0 0 0.0 -60 -40 - 100 120 140 160 ° ...

Page 4

... FA57SA50LCP Vishay High Power Products 1000 T = 150 C ° J 100 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig Typical Source Drain Diode Forward Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 ° ° 150 C J Single Pulse 100 V , Drain-to-Source Voltage (V) DS Fig ...

Page 5

... Rectangular Pulse Duration (sec Driver + 1500 TOP 1200 BOTTOM 900 600 300 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current For technical questions, contact: ind-modules@vishay.com FA57SA50LCP Vishay High Power Products Notes: 1. Duty factor Peak thJC C 0 (BR)DSS Fig ...

Page 6

... FA57SA50LCP Vishay High Power Products Charge Fig. 13a - Basic Gate Charge Waveform 1 www.vishay.com 6 ® HEXFET Power MOSFET Circuit layout considerations D.U.T. • Low stray inductance • Ground plane 3 • Low leakage inductance current transformer - + • dV/dt controlled • Driver same type as D.U.T. ...

Page 7

... Power MOSFET - Generation 3, HEXFET MOSFET silicon, DBC construction - Current rating ( Single switch - SOT-227 - Voltage rating (50 = 500 V) - Low charge - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com FA57SA50LCP Vishay High Power Products P.W. Period V =10V * http://www.vishay.com/doc?95036 http://www.vishay.com/doc?95037 www.vishay.com 7 ...

Page 8

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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