RF2312 RF Micro Devices, RF2312 Datasheet

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RF2312

Manufacturer Part Number
RF2312
Description
RF2312LINEAR GENERAL PURPOSE AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet

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Product Description
The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat-
ing in frequency bands up to 2500MHz. The device is
self-contained with 75
and requires only two external DC biasing elements to
operate as specified.
Optimum Technology Matching® Applied
Rev C3 020410
Typical Applications
• CATV Distribution Amplifiers
• Cable Modems
• Broadband Gain Blocks
Si BJT
Si Bi-CMOS
InGaP/HBT
RF IN
GND
GND
GND
Functional Block Diagram
1
2
3
4
!
GaAs HBT
SiGe HBT
GaN HEMT
input and output impedances,
gain block. The gain flatness of
0
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
8
7
6
5
RF OUT
GND
GND
GND
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 3.8dB Noise Figure
• +20dBm Output Power
• Single 5V to 12V Positive Power Supply
RF2312
RF2312 PCBA
RF2312 PCBA
LINEAR GENERAL PURPOSE AMPLIFIER
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
8° MAX
0° MIN
0.200
0.192
Package Style: SOIC-8
Linear General Purpose Amplifier
Fully Assembled Evaluation Board - 75
Fully Assembled Evaluation Board - 50
0.0500
0.0164
0.248
0.232
0.160
0.152
0.0100
0.0076
0.050
0.018
0.014
0.059
0.057
RF2312
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
-A-
0.010
0.004
3-1

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RF2312 Summary of contents

Page 1

... CATV Distribution Amplifiers • Cable Modems • Broadband Gain Blocks Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran- sistor (HBT) process, and has been designed for use as an easily cascadable 75 gain block ...

Page 2

... RF2312 Absolute Maximum Ratings Parameter Device Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Maximum Junction Temperature Parameter Min. Overall (50 ) Frequency Range Gain 14.5 Noise Figure Input VSWR Output VSWR Output IP +40 3 Output IP +33 3 Output IP +30 3 Output P +21 ...

Page 3

... RF2312 Unit Condition T=25°C, V =9V, Freq = 900 MHz = System C MHz 3dB Bandwidth dB dB From 50MHz to 300MHz, -30°C to +70°C. dB From 300MHz to 1000MHz, -30°C to +70°C. From 50MHz to 900MHz, -30°C to +70°C. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operat- ing frequency range ...

Page 4

... RF2312 Parameter Min. Overall (75 Push-Pull) Frequency Range Gain Noise Figure Input VSWR Output VSWR Output IP 2 Output IP 3 Second Harmonic 3-4 Specification Unit Typ. Max 150 MHz 15 dB 5.0 dB 1.1:1 1.2:1 +71 dBm +72 dBm +74 dBm +40 dBm +40 dBm +40 dBm -73 dBc -65 dBc -65 dBc Condition T=25° ...

Page 5

... The value for the resistor R 21 for V current of 100mA. In lower power applications the value of R increased to lower the current and V Rev C3 020410 is 30 (0.5W) for V C =8V. The DC voltage on this pin is typically 6.0V with this pin. D RF2312 Interface Schematic =9V and can OUT 3-5 ...

Page 6

... RF2312 5MHz to 50MHz Reverse Path NOTE 1: Optional resistor R can be used to maintain the correct bias level at higher supply voltages. This is used to S increase output capability or linearity for signals with high crest factors 220 TBD 7 used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2 and C3 should be kept physically as short as possible ...

Page 7

... TTWB-2-B F EDGE Rev C3 020410 Application Schematic Push-Pull Standard Voltage 120 RF2312 RF2312 RF2312 P1 1 GND 2 3 CON3 120 120 120 0 TTWB-2-B F EDGE V 3-7 ...

Page 8

... RF2312 2400 10 nF TTWB-2-A F EDGE 10 nF 2400 120 3-8 Application Schematic Push-Pull 24V 120 120 120 RF2312 10 uH 120 120 120 RF2312 P1 1 GND 2 3 CON3 120 0 TTWB-2-A 0 Rev C3 020410 F EDGE ...

Page 9

... NOTE: For 5V applications may be removed (shorted). This will result in degraded distortion performance. Rev C3 020410 120 120 120 2312400A R4 120 2312401- RF2312 P1 120 100 nF 100 nF L1 OUT 330 nH SMA micro strip C3 220 pF P1 120 120 120 L1 OUT 1000 nH micro strip C3 ...

Page 10

... RF2312 Evaluation Board Layout - 50 3-10 2.02” x 2.02” Board Thickness 0.031”, Board Material FR-4 Rev C3 020410 ...

Page 11

... Evaluation Board Layout - 75 Rev C3 020410 Standard Voltage 1.40” x 1.40” Board Thickness 0.062”, Board Material FR-4 RF2312 3-11 ...

Page 12

... RF2312 Evaluation Board Layout - 75 3-12 Push-Pull, Standard Voltage 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4 Rev C3 020410 ...

Page 13

... Evaluation Board Layout - 75 Rev C3 020410 Push-Pull, 24V 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4 RF2312 3-13 ...

Page 14

... RF2312 P versus P OUT 500 MHz 20.0 15.0 10.0 5.0 0.0 -15.0 -10.0 -5.0 P (dBm) IN Output Third Order Intercept Point (OIP3) versus P 500 MHz 50.0 40.0 30.0 20.0 10.0 0.0 -15.0 -10.0 -5.0 P (dBm) IN IM3 Products versus P 500/501 MHz 70.0 60.0 50.0 40 ...

Page 15

... MHz 1_: 115.2 -6.6211 50 MHz C2 2_: 87.551 -42.652 450 MHz 3_: 52.43 -44.855 900 MHz START .300 000 MHz RF2312 log MAG 10 dB/ REF 900.000 000 MHz STOP 3 000.000 000 MHz log MAG 10 dB/ REF 900.000 000 MHz STOP 3 000.000 000 MHz 4_: 14 ...

Page 16

... RF2312 75 Ohms, ICC = 100 mA, Temp = 25°C S[2,2] S[1,1] 3-16 75 Ohms, ICC = 110 mA, Temp = 25°C Swp Max 2.001GHz S[2,2] Swp Min 0.001GHz Swp Max 2.001GHz S[1,1] Swp Min 0.001GHz Rev C3 020410 ...

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