MG100Q2YS65H

Manufacturer Part NumberMG100Q2YS65H
DescriptionToshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
ManufacturerTOSHIBA Semiconductor CORPORATION
MG100Q2YS65H datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (151Kb)Embed
Next
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H
High Power & High Speed Switching
Applications
High input impedance
·
·
Enhancement-mode
·
The electrodes are isolated from case.
Equivalent Circuit
E1
C1
G1 E1/C2
(Ta = = = = 25°C)
Maximum Ratings
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1 ms
DC
Forward current
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Terminal
Screw torque
Mounting
E2
E2
JEDEC
G2
JEITA
TOSHIBA
Weight: 255 g (typ.)
Symbol
Rating
V
1200
CES
±20
V
GES
I
100
C
I
200
CP
I
100
F
I
200
FM
P
690
C
T
150
j
-40 to 125
T
stg
2500
V
Isol
(AC 1 minute)
¾
3
N▪m
¾
3
1
MG100Q2YS65H
2-95A4A
Unit
V
V
A
A
W
°C
°C
V
2002-10-04
Unit: mm

MG100Q2YS65H Summary of contents