MG100Q2YS65H

Manufacturer Part NumberMG100Q2YS65H
DescriptionToshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
ManufacturerTOSHIBA Semiconductor CORPORATION
MG100Q2YS65H datasheet
 


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Electrical Characteristics

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Electrical Characteristics

Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Switching time
Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Turn-on
Switching loss
Turn-off
Note: Switching time measurement circuit and input/output waveforms
R
G
-V
GE
I
C
R
G
(Ta = = = = 25°C)
Symbol
Test Condition
I
V
= ±20 V, V
GES
GE
CE
= 1200 V, V
I
V
CES
CE
GE
= 100 mA, V
V
I
GE (off)
C
CE
= 100 A,
I
C
V
CE (sat)
= 15 V
V
GE
= 10 V, V
C
V
ies
CE
GE
t
d (on)
t
r
Inductive load
t
on
= 600 V, I
= 100 A
V
CC
C
= ±15 V, R
V
t
GE
G
d (off)
t
f
t
off
V
I
= 100 A, V
= 0
F
F
GE
= 100 A, V
= -10 V,
I
F
GE
t
rr
di/dt = 700 A/ms
Transistor stage
R
th (j-c)
Diode stage
Inductive load
E
on
= 600 V, I
= 100 A
V
CC
C
= ±15 V, R
V
GE
G
E
off
Tc = 125°C
V
GE
I
F
0
V
CC
L
I
C
V
CE
0
t
d (off)
2
MG100Q2YS65H
Min
Typ.
Max
= 0
¾
¾
±500
= 0
¾
¾
2.0
= 5 V
¾
4.0
7.0
Tc = 25°C
¾
3.0
4.0
Tc = 125°C
¾
¾
3.6
= 0, f = 1 MHz
¾
¾
8500
¾
0.05
¾
¾
¾
0.05
¾
0.10
¾
= 9.1 W
¾
0.55
¾
¾
0.05
0.15
¾
0.60
¾
¾
2.4
3.5
¾
¾
0.1
¾
¾
0.18
¾
¾
0.41
¾
¾
10
= 9.1 W
¾
¾
8
90%
10%
90%
10%
10%
t
t
f
d (on)
t
t
on
off
2002-10-04
Unit
nA
mA
V
V
pF
ms
V
ms
°C/W
mJ
t
rr
90%
t
r