MG100Q2YS65H

Manufacturer Part NumberMG100Q2YS65H
DescriptionToshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
ManufacturerTOSHIBA Semiconductor CORPORATION
MG100Q2YS65H datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 3/6

Download datasheet (151Kb)Embed
PrevNext
I
– V
C
CE (sat)
200
15 V
20 V
12 V
18 V
150
10 V
100
P C = 690 W
50
V GE = 8 V
Common emitter
Tc = 25°C
0
0
2
4
6
8
Collector-emitter voltage V
(V)
CE
V
– V
CE
GE
12
Common emitter
Tc = 25°C
10
8
6
I C = 200 A
4
100 A
2
50 A
0
0
4
8
12
16
Gate-emitter voltage V
(V)
GE
I
– V
C
GE
200
Common emitter
V CE = 5 V
150
100
Tc = 125°C
-40°C
25°C
50
0
0
4
8
12
Gate-emitter voltage V
(V)
GE
I
200
18 V
15 V
150
100
50
0
10
0
2
Collector-emitter voltage V
12
10
8
6
4
2
0
20
0
4
Gate-emitter voltage V
200
Common cathode
V GE = 0
-40°C
150
100
50
125°C
0
16
0
1
Forward voltage V
3
MG100Q2YS65H
– V
C
CE (sat)
20 V
12 V
10 V
V GE = 8 V
Common emitter
Tc = 125°C
4
6
8
10
(V)
CE
V
– V
CE
GE
Common emitter
Tc = 125°C
I C = 200 A
100 A
50 A
8
12
16
20
(V)
GE
I
– V
F
F
Tc = 25°C
2
3
4
5
(V)
F
2002-10-04