MG100Q2YS65H

Manufacturer Part NumberMG100Q2YS65H
DescriptionToshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
ManufacturerTOSHIBA Semiconductor CORPORATION
MG100Q2YS65H datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 5/6

Download datasheet (151Kb)Embed
PrevNext
V
, V
– Q
CE
GE
G
1600
Common emitter
R L = 6 W
Tc = 25°C
1200
V CE = 0
800
200 V
600 V
400 V
400
0
0
200
400
600
Charge Q
(nC)
G
Short circuit SOA
6
5
4
3
2
V CC < = 900 V
T j < = 125°C
1
t w = 5 ms
0
0
200
400
600
800
1000
Collector-emitter voltage V
CE
R
– t
th (t)
w
10
1
Diode stage
Transistor stage
0.1
0.01
Tc = 25°C
0.001
0.001
0.01
0.1
1
Pulse width t
(s)
w
16
100000
12
10000
8
1000
Common emitter
4
V GE = 0
f = 1 MHz
Tc = 25°C
100
800
1000
0.01
1000
100
10
1
T j < = 125°C
V GE = ±15 V
R G = 9.1 W
0.1
1200
1400
0
200
(V)
10
5
MG100Q2YS65H
C – V
CE
C ies
C oes
Cres
0.1
1
10
100
Collector-emitter voltage V
(V)
CE
Reverse bias SOA
400
600
800
1000
1200
1400
Collector-emitter voltage V
(V)
CE
2002-10-04