M54587P MITSUBISHI, M54587P Datasheet
M54587P
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M54587P Summary of contents
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... DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-current- synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with ex- tremely low input-current supply. FEATURES ...
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... 200mA –3. 400mA 50V 5V – 350mA Test conditions C = 15pF (note 1) L M54587P/FP Ratings 10 –0.5 ~ +50 –0 500 500 50 1.79/1.1 –20 ~ +75 –55 ~ +125 Unit Limits min typ max 50 — — — 1.2 2.4 — 0.95 1.6 — –290 –600 — 1.4 2.4 — ...
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... 100 0 M54587P/FP 50% 50% 50% ton toff Output Saturation Voltage Collector Current Characteristics –20 C 0.5 1.0 1.5 2.0 (V) CE(sat) (M54587P 10Hz 100 Duty cycle (%) Mar.2002 ...
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... C 0 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics Collector current I Driver Supply Characteristics – Supply voltage Vcc (V) M54587P/ 100 – (mA Mar.2002 ...
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... DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Clamping Diode Characteristics 500 400 –20 C 300 200 100 0 0 0.5 1.0 1.5 Forward bias voltage V (V) F MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 2.0 M54587P/FP Mar.2002 ...