K6X4016T3F-TF70 Samsung, K6X4016T3F-TF70 Datasheet

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K6X4016T3F-TF70

Manufacturer Part Number
K6X4016T3F-TF70
Description
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Manufacturer
Samsung
Datasheet
K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
History
0.0
Initial draft
0.1
Revised
- Added Commercial product
- Deleted
44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
1.0
Finalized
Revised
- Changed I
(Operating power supply current) from 4mA to 2mA
CC
- Changed I
1(Average operating current) from 4mA to 3mA
CC
- Changed I
2(Average operating current) from 40mA to 25mA
CC
- Changed I
1(Standby Current(CMOS), Commercial)
SB
from 15 A to 10 A
- Changed I
1(Standby Current(CMOS), Industrial)
SB
from 20 A to 10 A
- Changed I
1(Standby Current(CMOS), Automotive)
SB
from 30 A to 20 A
- Changed I
(Data retention current, Commercial)
DR
from 15 A to 10 A
- Changed I
(Data retention current, Industrial)
DR
from 20 A to 10 A
- Changed I
(Data retention current, Automotive)
DR
from 30 A to 20 A
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
CMOS SRAM
Draft Date
July 29, 2002
December 2, 2002
August 8, 2003
1
Remark
Preliminary
Preliminary
Final
Revision 1.0
August 2003

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K6X4016T3F-TF70 Summary of contents

Page 1

... K6X4016T3F Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 Revised - Added Commercial product - Deleted 44-TSOP2-400R Package Type. - Added 55ns product(@ 3.0V~3.6V) 1.0 Finalized Revised - Changed I (Operating power supply current) from 4mA to 2mA ...

Page 2

... SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG s advanced CMOS process technology. The families support var- ious operating temperature range and have 44-TSOP2 pack- age type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current ...

Page 3

... Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Industrial Products(-40~85 C) Part Name Function 1) 44-TSOP2-F, 55ns, LL K6X4016T3F-TF55 44-TSOP2-F, 70ns, LL K6X4016T3F-TF70 44-TSOP2-F, 85ns, LL K6X4016T3F-TF85 UB I/O I/O 1~8 9~16 X ...

Page 4

... K6X4016T3F Family RECOMMENDED DC OPERATING CONDITIONS Item Supply voltage Ground Input high voltage Input low voltage Note: 1. Commercial Product otherwise specified. A Industrial Product otherwise specified. A Automotive Product: T =-40 to 125 C, otherwise specified Overshoot: V +2.0V in case of pulse width 30ns Undershoot: -2.0V in case of pulse width 30ns ...

Page 5

... K6X4016T3F Family AC OPERATING CONDITIONS TEST CONDITIONS ( Test Load and Input/Output Reference) Input pulse level: 0.4 to 2.2V Input rising and falling time: 5ns Input and output reference voltage: 1.5V Output load(see right): C =100pF+1TTL L C =30pF+1TTL L AC CHARACTERISTICS ( V =2.7~3.6V, Commercial product Industrial product: T ...

Page 6

... K6X4016T3F Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address CS UB Data out High-Z NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...

Page 7

... K6X4016T3F Family TIMING WAVEFORM OF WRITE CYCLE(1) Address CS UB Data in High-Z Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS UB Data in Data out High-Z (WE Controlled CW( WP(1) t AS( Data Valid t WHZ (CS Controlled AS(3) CW( WP( Data Valid 7 CMOS SRAM t WR( High WR( High-Z Revision 1.0 ...

Page 8

... K6X4016T3F Family TIMING WAVEFORM OF WRITE CYCLE(3) Address CS UB Data in High-Z Data out NOTES (WRITE CYCLE wri e occurs during the overlap low CS and low WE. A write begins when CS goes low and WE goes low with asserting for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi- tion when CS goes high and WE goes high ...

Page 9

... K6X4016T3F Family PACKAGE DIMENSIONS 44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F) #44 #1 18.81 MAX. 0.741 18.41 0.10 0.725 0.004 0.35 0.805 0. 0.032 0.014 0.004 #23 11.76 0.20 0.463 0.008 #22 1.00 0.10 0.039 0.004 1.20 MAX. 0.047 0.10 MAX 0.004 0.80 0.0315 9 CMOS SRAM ...

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