BTS941 Infineon Technologies AG, BTS941 Datasheet

no-image

BTS941

Manufacturer Part Number
BTS941
Description
Smart lowside power switch
Manufacturer
Infineon Technologies AG
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS941
Manufacturer:
INFINEON
Quantity:
12 500
Smart Lowside Power Switch
Features
Application
General Description
N channel vertical power FET in Smart SIPMOS
nology. Fully protected by embedded protected functions.
Semiconductor Group
Current limitation
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
All kinds of resistive, inductive and capacitive loads in switching or
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
linear applications
R
CC
1
4
CC
IN
ESD
2
NC
protection
Overload
limitation
dv/dt
temperature
protection
limitation
Current
Over-
Page 1
Overvoltage
protection
Short circuit
Short circuit
protection
protection
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
chip on chip tech-
HITFET
Source
Drain
LOAD
3
5
V bb
+
HITFET BTS 941
V
R
I
I
E
D(lim)
D(ISO)
DS
AS
DS(on)
02.12.1998
4000
60
28
12
M
6
V
m
A
A
mJ

Related parts for BTS941

BTS941 Summary of contents

Page 1

Smart Lowside Power Switch Features Logic Level Input Input Protection (ESD) Thermal Shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Maximum current adjustable with external resistor Current sense Status feedback with external input resistor Analog driving possible Application ...

Page 2

Maximum Ratings °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection without R CC Continuous input current 1) V -0.2V 10V IN V < -0.2V or ...

Page 3

Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150° Off state drain current -40...+150 °C, V ...

Page 4

Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Initial peak short circuit current limit Current limit ...

Page 5

Block Diagramm Terms HITFET The ground lead impedance of R should be as low as possible Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are ...

Page 6

Maximum allowable power dissipation P = f(T ) tot c BTS 941 160 W 120 100 On-state resistance 12A ...

Page 7

Typ. transfer characteristics =12V; T =25° 140 A 100 Typ. output characteristic =25° Parameter: V ...

Page 8

Typ. current limit versus f =25°C D(lim Parameter 140 10V A 100 Transient thermal impedance Z = f(t ) ...

Page 9

Application examples: Current Sense Features and Status Signals D IN HITFET µ open V cc load thermal V cc shutdown reached triptemperature The accuray of Vcc is at each temperature about 10 % ...

Page 10

Package and ordering code all dimensions in mm Ordering code: Q67060-S6702-A4 Ordering Code: Q67060-S6702-A3 Semiconductor Group Ordering Code: Q67060-S6702-A2 Page 10 BTS 941 02.12.1998 ...

Page 11

Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for ...

Related keywords