2MBI600NT-060 Fuji Electric holdings CO.,Ltd, 2MBI600NT-060 Datasheet

2MBI600NT-060

Manufacturer Part Number

2MBI600NT-060

Description

IGBT(600V 600A)

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI600NT-060.pdf (5 pages)

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Bonase Electronics (HK) Co., Limited

Part Number:

2MBI600NT-060

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Bonase Electronics (HK) Co., Limited

Part Number:

2MBI600NT-060

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FUJI

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Meier Automation Equipment Co., Limited

Part Number:

2MBI600NT-060

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HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

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2MBI600NT-060

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Meier Automation Equipment Co., Limited

Part Number:

2MBI600NT-060-10

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FUJITSU/富士通

Quantity:

20 000

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IGBT MODULE ( N series )

n n Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (~3 Times Rated Current)

n n Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

n n Maximum Ratings and Characteristics

•

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Input capacitance

Output capacitance

Reverse Transfer capacitance

Turn-on Time

Turn-off Time

Diode Forward On-Voltage

Reverse Recovery Time

•

Thermal Resistance

Collector-Emitter Voltage

Gate -Emitter Voltage

Collector

Current

Max. Power Dissipation

Operating Temperature

Storage Temperature

Isolation Voltage

Screw Torque

Absolute Maximum Ratings

Electrical Characteristics

Thermal Characteristics

Items

Continuous

1ms

Continuous

1ms

A.C. 1min.

( at T

( T

=25°C )

=25°C

Note: *1:Recommendable Value; 2.5

Mounting *1

Terminals *2

-I

Symbols

)

Symbols

C PULSE

CES

GES

OFF

CES

GES

stg

*2:Recommendable Value; 3.5

GE(th)

CE(sat)

ies

oes

res

th(c-f)

th(j-c)

-40

Ratings

1200

2100

+150

2500

IGBT

Diode

With Thermal Compound

600

3.5

4.5

f=1MHz

+125

=600A V

=600A

3.5 Nm (M5) or (M6)

4.5 Nm (M6)

=2.7

=0V V

=10V

=0V V

=20V I

=15V I

=0V

=300V

= 15V

Test Conditions

n n Outline Drawing

Units

=600mA

=600A

°C

=600V

= 20V

=0V

n n Equivalent Circuit

Min.

4.5

0.0167

39600

Typ.

8800

2670

0.6

0.2

0.6

0.2

0.06

0.15

Max.

300

Max.

4.0

7.5

2.9

1.2

0.6

1.0

0.35

3.1

Units

°C/W

µA

µs

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2MBI600NT-060 Summary of contents

Page 1

IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current ...

Page 2

Collector current vs. Collector-Emitter voltage T =25°C j 1400 V =20V,15V,12V GE 1200 1000 800 600 400 200 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage T =25° ...

Page 3

...

Page 4

Switching time vs =300V, I =600A, V =±15V 1000 100 10 1 Gate resistance : R Forward current vs. Forward voltage 1400 1200 1000 800 600 400 200 0 ...

Page 5

Switching loss vs. Collector current 200 400 Collector Current : I Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 ...

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