TA1282N KEC(Korea Electronics), TA1282N Datasheet
TA1282N
Manufacturer Part Number
TA1282N
Description
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)
Manufacturer
KEC(Korea Electronics)
Datasheet
1.TA1282N.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TA1282N
Manufacturer:
TOSHIBA
Quantity:
1 831
1999. 9. 10
HIGH CURRENT APPLICATION.
FEATURES
MAXIMUM RATING (Ta=25 )
Note : h
ELECTRICAL CHARACTERISTICS (Ta=25 )
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Complementary to KTC3210.
FE
CHARACTERISTIC
Classification 0:100 200,
CHARACTERISTIC
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
SYMBOL
Y:160 320
V
V
V
T
P
CBO
I
I
T
CEO
EBO
stg
C
E
C
j
SYMBOL
h
V
V
FE
V
(BR)CEO
(BR)EBO
I
I
V
CE(sat)
C
CBO
EBO
(Note)
f
BE
T
ob
RATING
-55 150
625
150
-30
-30
-5
-2
2
V
V
I
I
V
I
V
V
V
C
C
C
CB
EB
CE
CE
CE
CB
=-10mA, I
=-1mA, I
=-1.5A, I
=-30V, I
=-5V, I
=-2V, I
=-2V, I
=-2V, I
=-10V, I
UNIT
mW
V
V
V
A
A
TEST CONDITION
C
B
C
C
C
C
=0
=-0.03A
=0
B
=-500mA
=-500mA
=-500mA
E
E
=0
=0
=0, f=1MHz
EPITAXIAL PLANAR PNP TRANSISTOR
K
D
F
1
B
2
3
H
G
MIN.
F
100
-30
-5
-
-
-
-
-
-
E
KTA1282
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
TYP.
120
48
-
-
-
-
-
-
-
C
N
DIM
MAX.
M
A
B
C
D
G
H
K
N
E
F
L
-100
-100
J
320
-2.0
-1.0
-
-
-
-
MILLIMETERS
14.00 0.50
4.70 MAX
4.80 MAX
3.70 MAX
0.55 MAX
0.45 MAX
0.45
1.00
1.27
0.85
0.45
2.30
1.00
+ _
UNIT
MHz
nA
nA
pF
V
V
V
V
1/2
Related parts for TA1282N
TA1282N Summary of contents
Page 1
SEMICONDUCTOR HIGH CURRENT APPLICATION. FEATURES Complementary to KTC3210. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter ...
Page 2
-1600 -1400 -1200 -1000 -800 -600 -400 -200 COLLECTOR-EMITTER VOLTAGE V V CE(sat) -5 COMMON -3 EMITTER -0.5 -0.3 Ta=100 C Ta=25 C -0.1 ...