CY7C1351B Cypress Semiconductor Corporation., CY7C1351B Datasheet

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CY7C1351B

Manufacturer Part Number
CY7C1351B
Description
128Kx36 Flow-Through SRAM with NoBL Architecture
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

Specifications of CY7C1351B

Case
BGA

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1351B-100AC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
351B
Features
Selection Guide
Cypress Semiconductor Corporation
Document #: 38-05208 Rev. **
Logic Block Diagram
Maximum Access Time (ns)
Maximum Operating Current (mA) Commercial
Maximum CMOS Standby
Current (mA)
• Pin compatible and functionally equivalent to ZBT™ de-
• Supports 66-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Registered inputs for Flow-Through operation
• Byte Write capability
• 128K x 36 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• Standard 100 TQFP and 119 BGA packages
• Burst Capability—linear or interleaved burst order
vices IDT71V547, MT55L128L36F, and MCM63Z737
the need to use OE
Low standby power
— Data is transferred on every clock
— 7.5 ns (for 117-MHz device)
— 8.5 ns (for 100-MHz device)
— 11.0 ns (for 66-MHz device)
— 12.0 ns (for 50-MHz device)
— 14.0 ns (for 40-MHz device)
128Kx36 Flow-Through SRAM with NoBL™ Architecture
BWS
ADV/LD
A
OE
Mode
CEN
CLK
[16:0]
CE
CE
CE
WE
[3:0]
1
2
3
17
Commercial
CONTROL
and WRITE
LOGIC
3901 North First Street
PRELIMINARY
7C1351B-117 7C1351B-100
375 mA
5 mA
7.5
17
Functional Description
The CY7C1351B is a 3.3V, 128K by 36 Synchronous
Flow-Through Burst SRAM designed specifically to support
unlimited true back-to-back Read/Write operations without the
insertion of wait states. The CY7C1351B is equipped with the
advanced No Bus Latency™ (NoBL™) logic required to en-
able consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data through the SRAM, especially in sys-
tems that require frequent Write/Read transitions. The
CY7C1351B is pin/functionally compatible to ZBT SRAMs
IDT71V547, MT55L128L36F, and MCM63Z737.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock.The clock input is qualified by
the Clock Enable (CEN) signal, which, when deasserted, sus-
pends operation and extends the previous clock cycle. Maxi-
mum access delay from the clock rise is 7.5 ns (117-MHz
device).
Write operations are controlled by the four Byte Write Select
(BWS
ducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
.
CE
128KX36
MEMORY
ARRAY
350 mA
Data-In REG.
5 mA
[3:0]
8.5
Q
D
) and a Write Enable (WE) input. All writes are con-
36
San Jose
36
7C1351B-66
250 mA
5 mA
36
11.0
CA 95134
7C1351B-50 7C1351B-40
200 mA
5 mA
DQ
12.0
DP
CY7C1351B
1
Revised May 2, 2002
[31:0]
, CE
[3:0]
2
, CE
408-943-2600
175 mA
3
5 mA
) and an
14.0

Related parts for CY7C1351B

CY7C1351B Summary of contents

Page 1

... The CY7C1351B is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351B is equipped with the advanced No Bus Latency™ (NoBL™) logic required to en- able consecutive Read/Write operations with data being trans- ferred on every clock cycle ...

Page 2

... Pin Configuration DDQ DDQ DDQ DDQ Document #: 38-05208 Rev. ** PRELIMINARY 100-Pin TQFP CY7C1351B CY7C1351B DDQ DDQ DDQ DDQ Page ...

Page 3

... Pin Configuration Document #: 38-05208 Rev. ** PRELIMINARY 119-Ball Bump BGA CY7C1351B (128K x 36 BGA 16M DDQ ADV/ DDQ BWS DDQ DD SS( CLK BWS CEN DDQ MODE 64M TMS TDI TCK DDQ CY7C1351B DDQ DDQ BWS SS(1) DD DDQ BWS DDQ 32M NC TDO DNU ...

Page 4

... The direction of the pins is [16:0] are placed in a three-state condition. The outputs are auto- [31:0] is controlled by BWS 0 , and DP is controlled by BWS . CY7C1351B controls DQ and DP , BWS controls DQ 0 [7: BWS controls DQ and ...

Page 5

... Burst Read Accesses The CY7C1351B has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above ...

Page 6

... Valid Valid CY7C1351B CLK Comments x X L-H I/Os three-state following next recognized clock. X L-H Clock ignored, all operations suspended. X L-H Address latched. L-H Address latched, data presented two valid clocks later. X L-H Burst Read operation. Previous ac- cess was a Read operation. Ad- dresses incremented internally in conjunction with the state of MODE ...

Page 7

... Write Bytes 3, 0 Write Bytes 3, 1 Write Bytes Write Bytes 3, 2 Write Bytes Write Bytes Write All Bytes Document #: 38-05208 Rev. ** PRELIMINARY Linear Burst Sequence Fourth First Address Address Ax+1, Ax Ax+ BWS CY7C1351B Second Third Address Address Ax+1, Ax Ax+1, Ax Ax+ BWS BWS Page ...

Page 8

... Max Device Deselected, or 8.5-ns cycle, 117 MHz –0. DDQ 10-ns cycle, 100 MHz = 1 MAX CYC 15-ns cycle, 66 MHz 20-ns cycle, 50 MHz 25-ns cycle, 40 MHz CY7C1351B Ambient [8] Temperature DDQ 0°C to 70°C 3.3V 5% Min. Max. Unit 3.135 3.465 3.135 3.465 2.4 ...

Page 9

... Tested initially and after any design or process change that may affect these parameters. Document #: 38-05208 Rev. ** PRELIMINARY Test Conditions MHz 3. 3.3V DDQ R=317 3.3V OUTPUT 5 pF R=351 INCLUDING JIG AND SCOPE (b) Test Conditions CY7C1351B Max ALL INPUT PULSES 3.0V GND Symbol TQFP Typ. Units 28 C C/W JC Unit Notes 10 ...

Page 10

... SRAMs when sharing the same EOLZ CHZ CLZ , and t are specified with AC test conditions shown in part ( Test Loads. CHZ CLZ OEV EOLZ EOHZ CY7C1351B -66 -50 - 5.0 6.0 7.0 5.0 6.0 7.0 11.0 12 ...

Page 11

... Document #: 38-05208 Rev. ** PRELIMINARY CYC WA5 RA3 RA4 t DOH t CHZ Out In Out to define a write cycle (see Write Cycle Description table and CE . All chip selects need to be active in order to select DON’T CARE = UNDEFINED CY7C1351B t t CENH CENS RA6 RA7 t CHZ Out In Out Page ...

Page 12

... Q1+2 Q1+3 D2 Out Out In Out t DS defines a write cycle (see Write Cycle Description table). [3:0] , and CE . All chip enables need to be active in order to select DON’T CARE = UNDEFINED CY7C1351B RA3 t CLZ Q3 D2+2 D2+3 D2+1 Out input signals. [3:0] Page Q3+1 Out ...

Page 13

... Speed (MHz) Ordering Code 117 CY7C1351B-117AC 100 CY7C1351B-100AC 66 CY7C1351B-66AC 50 CY7C1351B-50AC 40 CY7C1351B-40AC 117 CY7C1351B-117BGC 100 CY7C1351B-100BGC 66 CY7C1351B-66BGC 50 CY7C1351B-50BGC 40 CY7C1351B-40BGC Document #: 38-05208 Rev. ** PRELIMINARY OE t EOHZ Three-state I/Os t EOLZ Package Name A101 100-Lead 1.4 mm Thin Quad Flat Pack 100-Lead 1.4 mm Thin Quad Flat Pack 100-Lead ...

Page 14

... Package Diagrams 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05208 Rev. ** PRELIMINARY CY7C1351B 51-85050-*A Page ...

Page 15

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. PRELIMINARY 119-Lead BGA ( 2.4) BG119 CY7C1351B 51-85115-*A Page ...

Page 16

... Document Title: CY7C1351B 128K x 36 Flow-Through SRAM with NoBL™ Architecture Document Number: 38-05208 Issue REV. ECN NO. Date ** 115440 05/06/02 Document #: 38-05208 Rev. ** PRELIMINARY Orig. of Change DSG Change from Spec number: 38-00691 to 38-05208 CY7C1351B Description of Change Page ...

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