CY7C1370B Cypress Semiconductor Corporation., CY7C1370B Datasheet

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CY7C1370B

Manufacturer Part Number
CY7C1370B
Description
512K x 36/1M x 18 Pipelined SRAM with NoBLTM Architecture
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05197 Rev. *A
Features
Functional Description
The CY7C1370B and CY7C1372B SRAMs are designed to
eliminate dead cycles when transitions from Read to Write or
vice versa. These SRAMs are optimized for 100 percent bus
utilization and achieve Zero Bus Latency™. They integrate
524,288 × 36 and 1,048,576 × 18 SRAM cells, respectively,
with advanced synchronous peripheral circuitry and a 2-bit
counter for internal burst operation. The Synchronous Burst
SRAM family employs high-speed, low-power CMOS designs
using advanced single-layer polysilicon, three-layer metal
technology. Each memory cell consists of six transistors.
All synchronous inputs are gated by registers controlled by a
positive-edge-triggered Clock input (CLK). The synchronous
Logic Block Diagram
• Zero Bus Latency, no dead cycles between Write and
• Fast clock speed: 200, 167, 150, and 133 MHz
• Fast access time: 3.0, 3.4, 3.8, and 4.2 ns
• Internally synchronized registered outputs eliminate
• Single 3.3V –5% and +10% power supply V
• Separate V
• Single WE (Read/Write) control pin
• Positive clock-edge triggered address, data, and
• Interleaved or linear four-word burst capability
• Individual byte Write (BWSa–BWSd) control (may be
• CEN pin to enable clock and suspend operations
• Three chip enables for simple depth expansion
• JTAG boundary scan (BGA package only)
• Available in 119-ball bump BGA and 100-pin TQFP
• Automatic power down available using ZZ mode or CE
A
DQ
DP
BWS
Read cycles
the need to control OE
control signal registers for fully pipelined applications
tied LOW)
packages
deselect
X
X
X
512K × 36/1M × 18 Pipelined SRAM with NoBL
X
X = 18:0
X = a, b, c, d X = a, b
X = a, b, c, d
X = a, b, c, d
CY7C1370
DDQ
for 3.3V or 2.5V I/O
X = 19:0
X = a, b
X = a, b
CY7C1372
ADV/LD
BWS
Mode
OE
CEN
CLK
WE
CE 1
CE 2
CE
Ax
3
X
3901 North First Street
DD
CONTROL
and Write
LOGIC
inputs include all addresses, all data inputs, depth-expansion
Chip Enables (CE
Clock enable (CEN), byte Write Enables (BWSa, BWSb,
BWSc, and BWSd), and Read-Write Control (WE). BWSc and
BWSd apply to CY7C1370B only.
Address and control signals are applied to the SRAM during
one clock cycle, and two cycles later, its associated data
occurs, either Read or Write.
A Clock enable (CEN) pin allows operation of the
CY7C1370B/CY7C1372B to be suspended as long as
necessary. All synchronous inputs are ignored when CEN is
HIGH and the internal device registers will hold their previous
values.
There are three chip enable pins (CE
the user to deselect the device when desired. If any one of
these three are not active when ADV/LD is LOW, no new
memory operation can be initiated and any burst cycle in
progress is stopped. However, any pending data transfers
(Read or Write) will be completed. The data bus will be in
high-impedance state two cycles after the chip is deselected
or a Write cycle is initiated.
The CY7C1370B and CY7C1372B have an on-chip two-bit
burst counter. In the burst mode, the CY7C1370B and
CY7C1372B provide four cycles of data for a single address
presented to the SRAM. The order of the burst sequence is
defined by the MODE input pin. The MODE pin selects
between linear and interleaved burst sequence. The ADV/LD
signal is used to load a new external address (ADV/LD = LOW)
or increment the internal burst counter (ADV/LD = HIGH)
Output enable (OE) and burst sequence select (MODE) are
the asynchronous signals. OE can be used to disable the
outputs at any given time. ZZ may be tied to LOW if it is not
used.
Four pins are used to implement JTAG test capabilities. The
JTAG circuitry is used to serially shift data to and from the
device. JTAG inputs use LVTTL/LVCMOS levels to shift data
during this testing mode of operation.
San Jose
CE
256K × 36/
512K × 18
MEMORY
ARRAY
Data-In REG.
1
Q
, CE
D
2
, and CE
CA 95134
3
), cycle start input (ADV/LD),
Revised August 6, 2002
CY7C1370B
CY7C1372B
1
, CE
Architecture
2
, CE
408-943-2600
3
) that allow
DP
DQ
X
X

Related parts for CY7C1370B

CY7C1370B Summary of contents

Page 1

... Write cycle is initiated. The CY7C1370B and CY7C1372B have an on-chip two-bit burst counter. In the burst mode, the CY7C1370B and CY7C1372B provide four cycles of data for a single address presented to the SRAM. The order of the burst sequence is defined by the MODE input pin ...

Page 2

... DQa DQb DDQ 20 61 DDQ DQa DQb 22 59 DQa DQb 23 58 DQa DPb 24 57 DQa DDQ 27 54 DDQ DQa DQa DPa CY7C1370B CY7C1372B 150 MHz 133 MHz 3.8 4.2 265 245 CY7C1372B (1M × 18) Unit DDQ DPa 74 DQa 73 DQa DDQ DQa 69 DQa ...

Page 3

... DQd M V DDQ N DQd P DQd DDQ DDQ DQb DDQ DQb J V DDQ DQb M V DDQ N DQb 64M U V DDQ Document #: 38-05197 Rev. *A 119-ball Bump BGA CY7C1370B (512K × 36) – 7 × 17 BGA ADV/ DPc DQc DQc DQc BWSc A BWSb DQc DQd V CLK ...

Page 4

... Pin Configurations (continued) CY7C1370B (512K × 36) – 11 × 15 FBGA DPc NC V DDQ D DQc DQc V DDQ E DQc DQc V DDQ F DQc DQc V DDQ G DQc DQc V DDQ DQd DQd V DDQ K DQd DQd V DDQ L DQd DQd V DDQ M DQd DQd V DDQ N DPd NC V DDQ P NC 64M ...

Page 5

... When left floating MODE will default HIGH interleaved burst order. Power supply inputs to the core of the device. Power supply for the I/O circuitry. Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK (BGA only). CY7C1370B CY7C1372B Description Page ...

Page 6

... TCK (BGA only). Serial clock to the JTAG circuit (BGA only). No connects. Reserved for address expansion. Pins are not internally connected. Ground for the device. Should be connected to ground of the system. No connects. Pins are not internally connected. Do not use pins. CY7C1370B CY7C1372B Description Page ...

Page 7

... Write operations. Byte Write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple byte Write operations. Because the CY7C1370B/CY7C1372B is a common I/O device, data should not be driven into the device while the outputs are active. The OE can be deasserted HIGH before ...

Page 8

... X Valid Linear Burst Sequence Fourth First Address Address A[1:0] A[1: CY7C1370B CY7C1372B CLK Comments X X L–H I/Os three-state following next recognized clock. X L–H Clock ignored, all operations suspended. X L–H Address latched. L–H Address latched, data presented two valid clocks later. ...

Page 9

... Device operation to ZZ ZZS t ZZ recovery time ZZREC [1, 2] Write Cycle Descriptions Function (CY7C1370B) Read Write - No bytes written Write Byte 0 - (DQa and DPa) Write Byte 1 - (DQb and DPb) Write Bytes 1, 0 Write Byte 2 - (DQc and DPc) Write Bytes 2, 0 Write Bytes 2, 1 ...

Page 10

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1370B/CY7C1372B incorporates a serial boundary scan Test Access Port (TAP) in the BGA package only. The TQFP package does not offer this functionality. This port operates in accordance with IEEE Standard 1149.1–1900, but does not have the set of functions required for full 1149.1 compliance ...

Page 11

... TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. CY7C1370B CY7C1372B Page ...

Page 12

... RESET 1 TEST-LOGIC/ 0 IDLE Note: 7. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05197 Rev SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- CY7C1370B CY7C1372B 1 SELECT IR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- Page ...

Page 13

... TAP Controller [8, 9] Over the Operating Range Test Conditions 100 8 100 A OL GND DDQ /2, Undershoot: V (AC)<0.5V for t<t /2, Power-up TCYC CY7C1370B CY7C1372B 0 Selection Circuitry Min. Max. 2.4 V – 0.2 DD 0.4 0.2 1 0.5 0 <2.6V and V <2.4V and V <1.4V for t<200 ms. ...

Page 14

... Test Clock TCK Test Mode Select TMS Test Data-In TDI Test Data-Out TDO Document #: 38-05197 Rev. *A [10, 11] Over the Operating Range Description / ns 2. TMSS t TMSH t TDIS t TDIH t TDOV CY7C1370B CY7C1372B Min. Max Unit 100 ns 10 MHz ALL INPUT PULSES 1.25V t TCYC ...

Page 15

... Do Not Use. This instruction is reserved for future use. Do Not Use. This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. CY7C1370B CY7C1372B Description Reserved for version number Defines depth of SRAM. 512K or 1M Defines width of the SRAM. × ...

Page 16

... ADV/LD 4B DQd DQd 1K 25 CEN DQd DQd 2N 27 CLK DPd MODE 3R 29 BWSa BWSb DQb CY7C1370B CY7C1372B Signal Bump Signal Name ID Bit # Name 2R 36 DQb 2T 37 DQb 3T 38 DQb DQb 3B 41 DQb 5B 42 DQb 7P 43 DQb 6N 44 DPb 6L 45 MODE ...

Page 17

... V > V – 0.3V DDQ 6.0-ns cycle, 167 MHz 6.7-ns cycle, 150 MHz 7.5-ns cycle, 133 MHz Max Device Deselected, All Speeds DD V > < CY7C1370B CY7C1372B Ambient [12] Temperature +70 C 3.3V – +85 C –5%/+10% Min. Max. 3.135 3.63 2.375 2.5V 2.0 DDQ = 3 ...

Page 18

... Tested initially and after any design or process change that may affect these parameters. Document #: 38-05197 Rev. *A Test Conditions MHz 3.3V DD DDQ R = 317 V DDQ OUTPUT GND R = 351 INCLUDING JIG AND SCOPE (b) Test Conditions CY7C1370B CY7C1372B Max [15] ALL INPUT PULSES 90% CC 90% 10% < 1V/ns ( (Junction to Ambient) (Junction to Case) 41.54 6.33 44.51 2.38 ...

Page 19

... SRAMs when sharing the same EOLZ CHZ CLZ CY7C1370B CY7C1372B -150 -133 Max. Min. Max. Min. Max. 6.7 7.5 2.3 2.5 2.3 2.5 3 ...

Page 20

... OE held LOW. Document #: 38-05197 Rev CYC WA5 RA3 RA4 CHZ Out Out ( for CY7C1370B and for CY7C1372B) define a Write cycle and Don’t Care = Undefined CY7C1370B CY7C1372B t t CENH CENS CEN HIGH blocks all synchronous inputs RA6 RA7 DOH Out In Out ...

Page 21

... Document #: 38-05197 Rev CYC WA2 CHZ Q1+2 Q1+3 Q1+1 Out Out Out define a Write cycle (see Write Cycle Description table and CE . All chip enables need to be active in order to select Undefined = Don’t Care CY7C1370B CY7C1372B RA3 t CLZ D2+2 D2+3 D2 input signals Out Page ...

Page 22

... Note: 21. Device must be deselected when entering ZZ mode. See Cycle Descriptions Table for all possible signal conditions to deselect the device. 22. I/Os are in three-state when exiting ZZ sleep mode. Document #: 38-05197 Rev EOHZ Three-State t EOLZ t ZZS I (active DDZZ Three-state CY7C1370B CY7C1372B t EOV t ZZREC Page ...

Page 23

... CY7C1370B-150BZC CY7C1372B-150BZC 133 CY7C1370B-133AC CY7C1372B-133AC CY7C1370B-133BGC CY7C1372B-133BGC CY7C1370B-133BZC CY7C1372B-133BZC 167 CY7C1370B-167AI CY7C1372B-167AI CY7C1370B-167BGI CY7C1372B-167BGI CY7C1370B-167BZI CY7C1372B-167BZI 150 CY7C1370B-150AI CY7C1372B-150AI CY7C1370B-150BGI CY7C1372B-150BGI CY7C1370B-150BZI CY7C1372B-150BZI 133 CY7C1370B-133AI CY7C1372B-133AI CY7C1370B-133BGI CY7C1372B-133BGI CY7C1370B-133BZI CY7C1372B-133BZI Shaded areas contain advance information. Document #: 38-05197 Rev. *A Package Name Package Type ...

Page 24

... Package Diagrams 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05197 Rev. *A CY7C1370B CY7C1372B 51-85050-A Page ...

Page 25

... Package Diagrams (continued) Document #: 38-05197 Rev. *A 165-Ball FBGA ( 1.2 mm) BB165A CY7C1370B CY7C1372B 51-85122-*B Page ...

Page 26

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 119-Lead BGA ( 2.4) BG119 CY7C1370B CY7C1372B 51-85115-*A ...

Page 27

... Revision History Document Title: CY7C1370B/CY7C1372B 512K x 36/ Pipelined SRAM with NoBL™ Architecture Document Number: 38-05197 ISSUE REV. ECN NO. DATE ** 112033 12/09/01 *A 116852 08/19/02 Document #: 38-05197 Rev. *A ORIG. OF CHANGE DESCRIPTION OF CHANGE DSG Change from Spec number: 38-01070 to 38-05197 CJM Changed V - Max = 3. ...

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