M5M5256DFP-70LL Renesas Electronics Corporation., M5M5256DFP-70LL Datasheet

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M5M5256DFP-70LL

Manufacturer Part Number
M5M5256DFP-70LL
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

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APPLICATION
PACKAGE
DESCRIPTION
FEATURE
organized as 32,768-words by 8-bits which is f abricated using
high-perf ormance 3 poly silicon CMOS technology . The use of
resistiv e load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough f or battery back-up application. It is ideal f or the memory
sy stems which require simple interf ace.
outline package.
M5M5256DFP,VP-55LL
M5M5256DFP,VP-70LL
M5M5256DFP,VP-70LLI
M5M5256DFP,VP-55XL
M5M5256DFP,VP-70XL
The M5M5256DFP,VP is 262,144-bit CMOS static RAMs
Especially the M5M5256DVP are packaged in a 28-pin thin small
•Single +5V power supply
•No clocks, no ref resh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prev ents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current .......... 0.05µA(ty p.)
M5M5256DFP
M5M5256DVP
Small capacity m emory units
Ty pe
: 28 pin 450 mil SOP
: 28pin 8 X 13.4 mm TSOP
Access
(max)
55ns
70ns
70ns
55ns
70ns
time
Temperature
-40~85°C
Oprating
0~70°C
0~70°C
2
M5M5256DFP,VP-55LL,-70LL,-70LLI,
Power supply current
(Vcc= 5.5V)
Activ e
50mA
(max)
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Stand-by
(Vcc= 5.5V)
(Vcc= 3.0V,
(Vcc= 5.5V)
(Vcc= 5.5V)
0.05µA
(max)
20µA
40µA
5µA
Typical)
22
23
24
25
26
27
28
PIN CONFIGURATION (TOP VIEW)
1
2
3
4
5
6
7
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
A11
A9
A8
A13
Vcc
A14
A12
A7
A6
A5
A4
A3
/OE
/W
Outline
10
11
12
13
14
Outline 28P2C-A (VP)
1
2
3
4
5
6
7
8
9
M5M5256DVP
28P2W-C (FP)
-55XL,-70XL
RENESAS LSIs
28
27
26
23
19
18
17
16
15
25
24
22
21
20
GND
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
A10
Vcc
/W
A13
A8
A9
A11
/OE
A10
/S
DQ8
DQ7
DQ6
DQ5
DQ4
A0
A1
A2
/S
21
20
19
18
17
16
15
14
13
12
11
10
9
8
1

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M5M5256DFP-70LL Summary of contents

Page 1

... DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough f or battery back-up application ...

Page 2

... FUNCTION The operation mode of the M5M5256DFP,VP is determined by a combination of the dev ice control inputs /S, /W and /OE. Each mode is summarized in the f unction table. A write cy cle is executed whenev er the low lev erlaps with the low lev el /S. The address must be set up bef ore the write cy cle and must be stable during the entire cy cle ...

Page 3

... O Note 0: Direction f or current f lowing into positiv e (no mark pical v alue is one 25° are periodically sampled and are not 100% tested M5M5256DFP,VP-55LL,-70LL,-70LLI, 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Conditions With respect to GND Ta=25°C -LL,-XL -LLI _ ( Vcc=5V±10%, unless otherwise noted) ...

Page 4

... Output disable time from /OE high dis t (W) Output enable time from /W high en Output enable time from /OE low t (OE) en M5M5256DFP,VP-55LL,-70LL,-70LLI, 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM ( Vcc=5V±10%, unless otherwise noted ) Parameter RENESAS LSIs -55XL,-70XL Limits -70LL,-70LLI, -55LL, 55XL -70 XL ...

Page 5

... TIMING DIAGRAMS Read cycle (Note 3) /OE (Note "H" lev el Write cycle (/W control mode (Note 3) / (Note 3) M5M5256DFP,VP-55LL,-70LL,-70LLI, 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM ( ( (OE (OE (S) en DATA VALID ( (A-WH (A) (W) ( rec t (W) dis t ( (OE) dis DATA IN STABLE t t (D) ( RENESAS LSIs -55XL,-70XL ...

Page 6

... MEASUREMENT CONDITIONS Input pulse level .............. V IH Input rise and fall time ..... 5ns Reference level ................ V OH Output load ...................... Fig.1 CL=50pF (-55LL,-55XL ) Transition is measured ±500mV from steady state voltage. (for ten,tdis) M5M5256DFP,VP-55LL,-70LL,-70LLI, 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM (A) ( ...

Page 7

... Power down set up time su (PD) t Power down recov ery time rec (PD) (3) POWER DOWN CHARACTERISTICS /S control mode Vcc 2.2V /S M5M5256DFP,VP-55LL,-70LL,-70LLI, 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM ( Vcc=5V±10%, unless otherwise noted) Test conditions _ 2.2V < V CC(PD 2V< V < 2.2V CC(PD) ~25° ...

Page 8

... P lease contact Renesas T echnology Corporation for further details on these m aterials or the products contained therein. REJ03C0055 © 2003 Renesas Technology Corp. New publication, effective Feb 2004. Specifications subject to change without notice M5M5256DFP,VP-55LL,-70LL,-70LLI, 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan RENESAS LSIs ...

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