MRF247

Manufacturer Part NumberMRF247
DescriptionNPN silicon RF power transistor
ManufacturerMotorola
MRF247 datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 175 MHz.
Specified 12.5 Volt, 175 MHz Characteristics —
Output Power = 75 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
Characterized With Series Equivalent Large–Signal Impedance Parameters
Internal Matching Network Optimized for Minimum Gain Frequency Slope
Response Over the Range 136 to 175 MHz
Load Mismatch Capability at Rated P out and Supply Voltage
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak
Total Device Dissipation @ T C = 25 C (1)
Derate above 25 C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
ELECTRICAL CHARACTERISTICS
(T C = 25 C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 100 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = 50 mAdc, V BE = 0)
Emitter–Base Breakdown Voltage
(I E = 10 mAdc, I C = 0)
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF247
75 W, 175 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Symbol
Value
V CEO
18
V CBO
36
V EBO
4.0
I C
20
P D
250
1.43
T stg
– 65 to +150
Symbol
Max
R JC
0.7
Symbol
Min
Typ
V (BR)CEO
18
V (BR)CES
36
V (BR)EBO
4.0
Order this document
by MRF247/D
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/ C
C
Unit
C/W
Max
Unit
Vdc
Vdc
Vdc
MRF247
1

MRF247 Summary of contents