PA28F200BV-T60 Intel Corporation, PA28F200BV-T60 Datasheet
PA28F200BV-T60
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PA28F200BV-T60 Summary of contents
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E REFERENCE ONLY 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n Intel SmartVoltage Technology Program/Erase 3 Read Operation n Very High-Performance Read Access Time ...
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... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 5937 Denver, CO 8021-9808 or call 1-800-548-4725 or visit Intel’s website at http://www.intel.com COPYRIGHT © INTEL CORPORATION, 1997 *Third-party brands and names are the property of their respective owners.. CG-041493 ...
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E 1.0 PRODUCT FAMILY OVERVIEW.....................5 1.1 New Features in the SmartVoltage Products 5 1.2 Main Features ..............................................5 1.3 Applications..................................................6 1.4 Pinouts.........................................................7 1.5 Pin Descriptions .........................................11 2.0 PRODUCT DESCRIPTION............................13 2.1 Memory Blocking Organization...................13 2.1.1 One 16-KB Boot Block.........................13 2.1.2 Two 8-KB ...
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SmartVoltage BOOT BLOCK FAMILY REVISION HISTORY Number -001 Initial release of datasheet. -002 Status changed from Product Preview to Preliminary 28F200CV/CE/BE references and information added throughout. 2.7 V CE/BE specs added throughout. The following sections have been changed or ...
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E 1.0 PRODUCT FAMILY OVERVIEW This datasheet contains the specifications for the two branches of products in the SmartVoltage 2-Mbit boot block flash memory family. These -BV/CV suffix products offer 3.0 V–3.6 V operation and also operate ...
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SmartVoltage BOOT BLOCK FAMILY Separately erasable blocks, including a hardware- lockable boot block (16,384 bytes), two parameter blocks (8,192 bytes each) and main blocks (one block of 98,304 bytes and one block of 131,072 bytes), define the boot block ...
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E The 2-Mbit boot block flash memory family provides full-function, blocked flash memories suitable for a wide range of applications. These applications include extended PC BIOS and applications storage, digital cellular phone program and data storage, telecommunication boot/firmware, printer firmware/font ...
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SmartVoltage BOOT BLOCK FAMILY A[17:1] CS# RD# WR# i386™ EX CPU (25 MHz) D[15:0] RESET RESET NOTE: A data bus buffer may be needed for processor speeds above 25 MHz. Figure 1. 28F200 Interface to Intel386™ EX Microprocessor A[16:17] ...
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E 28F008B 28F004B ...
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SmartVoltage BOOT BLOCK FAMILY 28F800 28F400 ...
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E 1.5 Pin Descriptions Table 2. 28F200/002 Pin Descriptions Symbol Type ADDRESS INPUTS for memory addresses. Addresses are internally latched A –A INPUT 0 17 during a write cycle. The 28F200 only has A the 28F002B has A A INPUT ...
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SmartVoltage BOOT BLOCK FAMILY Table 2. 28F200/002 Pin Descriptions Symbol Type WP# INPUT WRITE PROTECT: Provides a method for unlocking the boot block in a system without supply. When WP logic low, the boot ...
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E 2.0 PRODUCT DESCRIPTION 2.1 Memory Blocking Organization This product family features an asymmetrically- blocked architecture providing system memory integration. Each erase block can be erased independently of the others up to 100,000 times for commercial temperature ...
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SmartVoltage BOOT BLOCK FAMILY 28F200-T 1FFFFH 16-Kbyte BOOT BLOCK 1E000H 1DFFFH 8-Kbyte PARAMETER BLOCK 1D000H 1CFFFH 8-Kbyte PARAMETER BLOCK 1C000H 1BFFFH 96-Kbyte MAIN BLOCK 10000H 0FFFFH 128-Kbyte MAIN BLOCK 00000H NOTE operation, the least significant system address ...
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E 3.0 PRODUCT FAMILY PRINCIPLES OF OPERATION Flash memory combines EPROM functionality with in-circuit electrical program and erase. The boot block flash family utilizes a Command User Interface (CUI) and automated algorithms to simplify program and erase operations. The CUI ...
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SmartVoltage BOOT BLOCK FAMILY Table 3. Bus Operations for Word-Wide Mode (BYTE Mode Notes RP# Read 1,2 Output Disable V IH Standby V IH Deep Power-Down Intelligent Identifier (Mfr) ...
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E 3.2.2 INTELLIGENT IDENTIFIERS To read the manufacturer and device codes, the device must be in intelligent identifier read mode, which can be reached using two methods: by writing the Intelligent Identifier command (90H taking the A pin ...
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SmartVoltage BOOT BLOCK FAMILY Table 6. Command Codes and Descriptions Code Device Mode 00 Invalid/ Unassigned commands that should not be used. Intel reserves the right to redefine Reserved these codes for future functions. FF Read Array Places the ...
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E Table 6. Command Codes and Descriptions (Continued) Code Device Mode 50 Clear Status The WSM can only set the Program Status and Erase Status bits in the status Register register to “1;” it cannot clear them to “0.” The ...
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SmartVoltage BOOT BLOCK FAMILY Table 8. Status Register Bit Definition WSMS ESS SR.7 = WRITE STATE MACHINE STATUS 1 = Ready (WSMS Busy SR.6 = ERASE-SUSPEND STATUS (ESS Erase Suspended 0 ...
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E 3.3.2.1 Clearing the Status Register The WSM sets status bits 3 through 7 to “1,” and clears bits 6 and 7 to “0,” but cannot clear status bits 3 through 5 to “0.” Bits 3 through 5 can only ...
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SmartVoltage BOOT BLOCK FAMILY 3.3.4.1 Suspending and Resuming Erase Since an erase operation requires on the order of seconds to complete, an Erase Suspend command is provided to allow erase-sequence interruption in order to read data from another block ...
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E Start Write 40H, Word/Byte Address Write Word/Byte Data/Address Read Status Register NO SR YES Full Status Check if Desired Word/Byte Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above ...
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SmartVoltage BOOT BLOCK FAMILY Start Write 20H, Block Address Write D0H and Block Address Read Status Register Suspend Erase Loop NO 0 YES Suspend SR.7 = Erase 1 Full Status Check if Desired Block Erase Complete FULL STATUS CHECK ...
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E Start Write B0H Write 70H Read Status Register 0 SR SR.6 = Erase Completed 1 Write FFH Read Array Data No Done Reading Yes Write D0H Write FFH Erase Resumed Read Array Data Figure 11. Erase ...
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SmartVoltage BOOT BLOCK FAMILY 3.5 Power Consumption 3.5.1 ACTIVE POWER With CE logic-low level and RP logic- high level, the device is placed in the active mode. Refer to the DC Characteristics table for I ...
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... Table headings in the DC and AC characteristics tables (i.e., BV-60, BV-80, BV-120, TBV-80, TBE- 120) refer to the specific products listed below. See Section 5.0 for more information on product naming and line items. Abbreviation BV-60 E28F002BV-T60, E28F002BV-B60, PA28F200BV-T60, PA28F200BV-B60, E28F200CV-T60, E28F200CV-B60, E28F200BV-T60, E28F200BV-B60 BV-80 E28F002BV-T80, E28F002BV-B80, PA28F200BV-T80, PA28F200BV-B80, E28F200CV-T80, E28F200CV-B80, E28F200BV-T80, E28F200BV-B80 ...
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SmartVoltage BOOT BLOCK FAMILY 4.0 ELECTRICAL SPECIFICATIONS 4.1 Absolute Maximum Ratings* Commercial Operating Temperature During Read .............................. 0 °C to +70 °C During Block Erase and Word/Byte Program ............ 0 °C to +70 °C Temperature Under Bias ....... –10 ...
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E 4.2.1 APPLYING V CC VOLTAGES When applying V voltage to the device, a delay CC may be required before initiating device operation, depending on the V ramp rate slower than 1V/100 µs (0.01 V/µs) then no ...
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SmartVoltage BOOT BLOCK FAMILY 4.4 DC Characteristics—Commercial Prod Sym Parameter V CC Note I Input Load Current Output Leakage Current Standby Current 1,3 CC CCS I V Deep Power-Down 1 CC CCD ...
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E 4.4 DC Characteristics—Commercial Prod Sym Parameter V CC Note V Erase Suspend CC I 1,2 CCES Current I V Standby Current 1 PP PPS V Deep Power-Down PPD Current I V Read Current 1 PP PPR ...
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SmartVoltage BOOT BLOCK FAMILY 4.4 DC Characteristics—Commercial Prod Sym Parameter Note V A Intelligent Identifier 9 ID Voltage V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage Output High Voltage (TTL) ...
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E 3.0 INPUT 1.5 0.0 NOTE: AC test inputs are driven at 3.0 V for a logic “1” and 0.0 V for a logic “0.” Input timing begins, and output timing ends, at 1.5 V. Input rise and fall times ...
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SmartVoltage BOOT BLOCK FAMILY 4.5 AC Characteristics—Commercial Prod Sym Parameter V CC Load Note t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay 2 ELQV t RP# to Output Delay PHQV t ...
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E 4.5 AC Characteristics—Commercial Prod Sym Parameter V CC Load Notes t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay 2 ELQV t RP# to Output Delay PHQV t OE# to Output Delay ...
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SmartVoltage BOOT BLOCK FAMILY Device and Address Selection V IH ADDRESSES (A) Address Stable CE# ( OE# ( WE# ( High Z DATA ...
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E 4.6 AC Characteristics—WE#-Controlled Write Operations Sym Parameter t Write Cycle Time AVAV t RP# Setup to WE# Going Low PHWL t CE# Setup to WE# Going Low ELWL t Boot Block Lock Setup to WE# PHHWH Going High V ...
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SmartVoltage BOOT BLOCK FAMILY 4.6 AC Characteristics—WE#-Controlled Write Operations (Continued) Prod Sym Parameter V CC Load Notes t Write Cycle Time AVAV t RP# Setup to WE# Going PHWL Low t CE# Setup to WE# Going ELWL Low t ...
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E NOTES: 1. Read timing characteristics during program and erase operations are the same as during read-only operations. R efer to AC Characteristics during read mode. 2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally ...
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SmartVoltage BOOT BLOCK FAMILY 4.7 AC Characteristics—CE#-Controlled Write Operations Sym Parameter t Write Cycle Time AVAV t RP# High Recovery to CE# PHEL Going Low t WE# Setup to CE# Going Low WLEL t Boot Block Lock Setup to ...
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E 4.7 AC Characteristics—CE#-Controlled Write Operations (Continued) Prod Sym Parameter V CC Load Notes t Write Cycle Time AVAV t RP# High Recovery to PHEL CE# Going Low t WE# Setup to CE# Going WLEL Low 6,8 t Boot Block ...
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SmartVoltage BOOT BLOCK FAMILY NOTES: See AC Characteristics—WE#-Controlled Write Operations for notes 1 through 11. 12. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE stems where CE# defines the write ...
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E 4.8 Erase and Program Timings—Commercial °C to +70 ° Parameter Boot/Parameter Block Erase Time Main Block Erase Time Main Block Program Time (Byte) Main Block Program Time (Word) Byte Program Time ...
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SmartVoltage BOOT BLOCK FAMILY 4.9.1 APPLYING V VOLTAGES CC When applying V voltage to the device, a delay CC may be required before initiating device operation, depending on the V ramp rate slower than 1V/100 µs ...
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E 4.11 DC Characteristics—Extended Temperature Operations Prod Sym Parameter V CC Notes I Input Load Current Output Leakage Current Standby Current I 1,3 CC CCS V Deep Power-Down CCD Current V ...
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SmartVoltage BOOT BLOCK FAMILY 4.11 DC Characteristics—Extended Temperature Operations Prod Sym Parameter V CC Note V Program Current I 1,4 CC CCW for Word or Byte V Erase Current I 1,4 CC CCE V Erase Suspend I 1,2 CC ...
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E 4.11 DC Characteristics—Extended Temperature Operations Prod Sym Parameter V CC Notes A Intelligent Identifier Voltage V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage Output High Voltage (TTL) ...
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SmartVoltage BOOT BLOCK FAMILY NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at V product versions (packages and speeds specified with device de-selected. If device is read while in erase suspend, current ...
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E 4.12 AC Characteristics—Read Only Operations Symbol Parameter t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay ELQV t RP# to Output Delay PHQV t OE# to Output Delay GLQV t CE# to ...
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SmartVoltage BOOT BLOCK FAMILY 4.13 AC Characteristics—WE#-Controlled Write Operations Extended Temperature Sym Parameter t Write Cycle Time AVAV t RP# High Recovery to WE# Going Low PHWL t CE# Setup to WE# Going Low ELWL t Boot Block Lock ...
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E NOTES: 1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC Characteristics during read mode. 2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally which ...
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SmartVoltage BOOT BLOCK FAMILY 4.14 AC Characteristics—CE#-Controlled Write Operations Extended Temperature Sym Parameter t Write Cycle Time AVAV t RP# High Recovery to CE# Going Low PHEL t WE# Setup to CE# Going Low WLEL t Boot Block Lock ...
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E 4.15 Erase and Program Timings—Extended Temperature T = –40 °C to +85 ° Parameter Boot/Parameter Block Erase Time Main Block Erase Time Main Block Program Time (Byte) Main Block Program Time (Word) Byte Program ...
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... Intel Flash products Density / Organization 00X = x8-only ( x8/x16 Selectable ( X00 VALID COMBINATIONS: 40-Lead TSOP 44-Lead PSOP Commercial E28F002BVT60 PA28F200BVT60 E28F002BVB60 PA28F200BVB60 E28F002BVT80 PA28F200BVT80 E28F002BVB80 PA28F200BVB80 E28F002BVT120 PA28F200BVT120 E28F002BVB120 PA28F200BVB120 Extended TE28F002BVT80 TB28F200BVT80 TE28F002BVB80 TB28F200BVB80 V CC Name 2 28F002BV 28F200BV 28F200CV ...
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E 6.0 ADDITIONAL INFORMATION (1,2) Related Intel Information Order Number 290530 4-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet 290539 8-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet 290599 Smart 5 Boot Block Flash Memory Family Mbit ...