IRF7314TR International Rectifier Corp., IRF7314TR Datasheet

IRF7314TR

Manufacturer Part Number

IRF7314TR

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF7314TR.pdf (7 pages)

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Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Absolute Maximum Ratings ( T

Description

Thermal Resistance Ratings

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Surface Mount

Fully Avalanche Rated

Parameter

= 25°C Unless Otherwise Noted)

PRELIMINARY

= 25°C

= 70°C

= 25°C

= 70°C

G 2

G 1

S 1

Symbol

dv/dt

STG

T op V iew

Symbol

HEXFET

-55 to + 150

Maximum

D 1

D 2

± 12

0.20

S O -8

-2.5

-2.9

-5.0

150

-20

-21

-5.3

-4.3

2.0

1.3

IRF7314

Limit

Power MOSFET

DS(on)

62.5

DSS

PD - 9.1436B

= 0.058

= -20V

Units

°C/W

V/ ns

°C

11/18/97

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IRF7314TR Summary of contents

Page 1

Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching ...

Page 2

IRF7314 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7314TR International Rectifier Corp., IRF7314TR Datasheet

IRF7314TR

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