W24L257S70LL Information Storage Devices, Inc, W24L257S70LL Datasheet

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W24L257S70LL

Manufacturer Part Number
W24L257S70LL
Description
Manufacturer
Information Storage Devices, Inc
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W24L257S70LL
Manufacturer:
WINBOND
Quantity:
150
Part Number:
W24L257S70LL
Manufacturer:
WINBOND/华邦
Quantity:
20 000
GENERAL DESCRIPTION
The W24L257 is a normal-speed, very low-power CMOS static RAM organized as 32768
operates on a wide voltage range from 3V to 5.5V power supply. This device is manufactured using
Winbond's high performance CMOS technology.
FEATURES
PIN CONFIGURATIONS
Low power consumption:
Access time: 70 nS
3.3V/5V power supply
Fully static operation
All inputs and outputs directly TTL compatible
A11
A8
A13
#W
V
E
A14
A12
A3
#OE
A9
A7
A5
A4
A6
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A12
A14
I/O1
I/O2
I/O3
V
A7
A6
A5
A4
A3
A2
A1
A0
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
TSOP
15
28
27
26
25
24
23
22
21
20
19
18
17
16
A10
#WE
A13
A8
A9
A11
#OE
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VDD
26
25
23
21
20
19
18
16
28
27
24
22
17
15
A0
A1
A2
A10
#CS
I/O8
I/O7
I/O6
I/O5
I/O4
V
I/O3
I/O2
I/O1
SS
32K
- 1 -
BLOCK DIAGRAM
PIN DESCRIPTION
Three-state outputs
Battery back-up operation capability
Data retention voltage: 2V (min.)
Packaged in 330 mil SOP, and standard type
one STSOP (8 mm
I/O1
SYMBOL
A0
#WE
#OE
#CS
V
V
NC
8 CMOS STATIC RAM
DD
SS
A14
I/O8
Publication Release Date: October 3, 2001
#CS
#OE
#WE
A12
A14
I/O1
I/O8
A2
A3
A4
A5
A13
A6
A7
:
CLK GEN.
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
CNTRL
CLK
GEN.
DATA
.
W
R
O
D
E
C
O
D
E
R
13.4 mm)
A11 A10
DESCRIPTION
CORE CELL ARRAY
COLUMN DECODER
PRECHARGE CKT.
32 X 8 COLUMNS
512 ROWS
I/O CKT.
A1 A0
W24L257
A8
A9
Revision A5
8 bits that

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W24L257S70LL Summary of contents

Page 1

GENERAL DESCRIPTION The W24L257 is a normal-speed, very low-power CMOS static RAM organized as 32768 operates on a wide voltage range from 3V to 5.5V power supply. This device is manufactured using Winbond's high performance CMOS technology. FEATURES Low power ...

Page 2

TRUTH TABLE #CS #OE # CHARACTERISTICS Absolute Maximum Ratings PARAMETER Supply Voltage to V Potential SS Input/Output to V Potential SS Allowable Power Dissipation Storage Temperature Operating ...

Page 3

Operating Characteristics, continued PARAMETER SYM. Standby Power Supply I SB Current I SB1 Note: Typical parameter is measured under ambient temperature T CAPACITANCE ( 10 5 MHz) DD ...

Page 4

AC Characteristics, continued Read Cycle ( PARAMETER Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Selection to Output ...

Page 5

TIMING WAVEFORMS Read Cycle 1 (Address Controlled) Address D OUT Read Cycle 2 (Chip Select Controlled) #CS1 D OUT Read Cycle 3 (Output Enable Controlled) Address #OE #CS D OUT ACS T CLZ ...

Page 6

Timing Waveforms, continued Write Cycle 1 Address #OE #CS #WE D OUT D IN Write Cycle 2 # Fixed) IL Address #CS #WE D OUT D IN Notes: 1. During this period, I/O pins are in the ...

Page 7

DATA RETENTION CHARACTERISTICS ( for L/LL, - for LE, - for LI) A PARAMETER V for Data Retention DD Data Retention Current Chip Deselect to Data Retention Time Operation Recovery ...

Page 8

... ORDERING INFORMATION PART NO. ACCESS TIME (nS) W24L257S70L 70 W24L257S70LL 70 W24L257S70LE 70 W24L257S70LI 70 W24L257Q70L 70 W24L257Q70LL 70 W24L257Q70LE 70 W24L257Q70LI 70 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...

Page 9

BONDING PAD DIAGRAM A12 A14 I/O3 A0 ...

Page 10

PACKAGE DIMENSIONS 28-pin SOP Seating Plane 28-pin Standard Type One TSOP Detail ...

Page 11

VERSION HISTORY VERSION DATE A1 May 2000 A2 Nov. 2000 A3 Dec. 2000 A4 Jun. 2001 A5 Oct. 3, 2001 Headquarters Headquarters No. 4, Creation Rd. III, No. 4, Creation Rd. III, Science-Based Industrial Park, Science-Based Industrial Park, Hsinchu, Taiwan ...

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