HY57V281620ETP-H Hynix Semiconductor, HY57V281620ETP-H Datasheet
HY57V281620ETP-H
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HY57V281620ETP-H Summary of contents
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Synchronous DRAM based 4Bank x16 I/O Document Title 4Bank 16bits Synchronous DRAM Revision History Revision No. 1.0 First Version Release 1.1 1. Corrected PIN ASSIGNMENT A12 to NC This document is a general ...
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... HY57V281620E(L)T(P)-6 HY57V281620E(L)T(P)-7 HY57V281620E(L)T(P)-H Note: 1. HY57V281620ET Series: Normal power, Leaded. 2. HY57V281620ELT Series: Low power, Leaded. 3. HY57V281620ETP Series: Normal power, Lead Free. 4. HY57V281620ELTP Series: Low power, Lead Free. Rev. 1.1 / Jan. 2005 Synchronous DRAM Memory 128Mbit (8Mx16bit) • Auto refresh and self refresh • ...
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PIN ASSIGNMENTS VDD 1 DQ0 2 VDDQ 3 DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 LDQM 15 /WE 16 /CAS 17 /RAS 18 /CS 19 ...
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PIN DESCRIPTION SYMBOL TYPE CLK Clock CKE Clock Enable CS Chip Select BA0, BA1 Bank Address A0 ~ A11 Address Row Address Strobe, RAS, CAS, WE Column Address Strobe, Write Enable UDQM, LDQM Data Input/Output Mask DQ0 ~ DQ15 Data ...
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FUNCTIONAL BLOCK DIAGRAM 2Mbit x 4banks x 16 I/O Synchronous DRAM Self refresh logic & timer CLK Row Active CKE CS RAS Refresh CAS Column Active WE U/LDQM Bank Select Address A0 Register A1 A11 BA1 BA0 Rev. 1.1 / ...
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BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A11 A10 Code OP Code A9 Write Mode 0 Burst Read and Burst Write 1 Burst Read and Single Write CAS Latency CAS Latency 0 ...
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ABSOLUTE MAXIMUM RATING Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Short Circuit Output Current Power Dissipation Soldering Temperature / Time DC OPERATING CONDITION Parameter Symbol Power Supply Voltage V ...
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CAPACITANCE ( Parameter CLK Input capacitance A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE, LDQM, UDQM Data input / output capacitance DQ0 ~ DQ15 DC CHARACTERISTICS I Parameter Symbol Input Leakage Current Output ...
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DC CHARACTERISTICS II Sym- Parameter bol Operating Current I DD1 I DD2P Precharge Standby Current in Power Down Mode I DD2PS I DD2N Precharge Standby Current in Non Power Down Mode I DD2NS I DD3P Active Standby Current in Power ...
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AC CHARACTERISTICS I Parameter CAS Latency=3 System/Clock/ Cycle Time CAS Latency=2 Clock High Pulse Width Clock Low Pulse Width CAS Latency=3 Access Time From Clock CAS Latency=2 Data-out Hold Time Data-Input Setup Time Data-Input Hold Time Address Setup Time Address ...
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AC CHARACTERISTICS II Parameter RAS Cycle Time Operation RAS Cycle Time Auto Refresh RAS to CAS Delay RAS Active Time RAS Precharge Time RAS to RAS Bank Active Delay CAS to CAS Delay Write Command to Data-In Delay Data-in to ...
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COMMAND TRUTH TABLE Command CKEn-1 Mode Register Set H No Operation H Bank Active H Read H Read with Autoprecharge Write H Write with Autoprecharge Precharge All Banks H Precharge selected Bank Burst Stop H DQM H Auto Refresh H ...
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PACKAGE INFORMATION 400mil 54pin Thin Small Outline Package 22.327(0.8790) 22.149(0.8720) 0.150(0.0059) 0.050(0.0020) 0.400(0.016) 0.80(0.0315)BSC 0.300(0.012) Rev. 1.1 / Jan. 2005 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L)T(P) Series UNIT : mm(inch) 11.938(0.4700) 11.735(0.4620) 10.262(0.4040) 10.058(0.3960) 5deg 0.597(0.0235) 0.210(0.0083) 0deg 0.406(0.0160) 0.120(0.0047) ...