E28F016SV-120 Intel Corporation, E28F016SV-120 Datasheet
E28F016SV-120
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E28F016SV-120 Summary of contents
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E 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile™ MEMORY Includes Commercial and Extended Temperature Specifications n SmartVoltage Technology User-Selectable 3. User-Selectable 5V or 12V Access Time n 1 ...
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... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683 or visit Intel’s Website at http:\\www.intel.com COPYRIGHT © INTEL CORPORATION, 1997 Third-party brands and names are the property of their respective owners. * CG-041493 ...
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E 1.0 INTRODUCTION .............................................7 1.1 Enhanced Features......................................7 1.2 Product Overview.........................................7 2.0 DEVICE PINOUT.............................................9 2.1 Lead Descriptions ......................................11 3.0 MEMORY MAPS ...........................................15 3.1 Extended Status Registers Memory Map ...16 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS ................17 4.1 Bus Operations ...
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FlashFile™ MEMORY REVISION HISTORY Number Original Version -001 Added 28F016SV-065/-070 -002 Improved burst write transfer rate to 30.8 MB/sec. Added 56-lead SSOP Type I packaging information. Changed V from 2V to 1.5V. PPLK Increased I at ...
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... Combined Commercial and Extended Temperature information into single datasheet. -006 Updated AC Specifications: Page Buffer Reads: (t -007 Updated Disclaimer 28F016SV FlashFile™ MEMORY (Continued) Description Specifications CCS to 400 ns for E28F016SV 065 devices and t specifications PLYL PLYH YLPH YHPH specifications to Power-Up and Reset Timings (Section 5.9) from 0 ...
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FlashFile™ MEMORY Page intentionally left blank 6 E ...
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E 1.0 INTRODUCTION The documentation of the Intel 28F016SV memory device includes this datasheet, a detailed user’s manual, and a number of application notes and design tools, all of which are referenced in Appendix B. The datasheet is intended to ...
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FlashFile™ MEMORY Each block can be written and erased a minimum of 100,000 cycles. Systems can achieve one million Block Erase Cycles by providing wear- leveling algorithms and graceful block retirement. These techniques have already been employed in many ...
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E order address and address A is not used (don’t 0 care). A device block diagram is shown in Figure 1. The 28F016SV is specified for a maximum access time operation (4.75V to ...
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FlashFile™ MEMORY DQ 8-15 Output Buffer Input Buffer Y Decoder Address Queue Registers X Decoder Address Counter Figure 1. 28F016SV Block Diagram Architectural Evolution Includes SmartVoltage Technology, Page Buffers, Queue Registers and Extended Registers 10 DQ 0-7 Output Input ...
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E 2.1 Lead Descriptions Symbol Type A INPUT BYTE-SELECT ADDRESS: Selects between high and low byte when 0 device mode. This address is latched in x8 data programs. Not used in x16 mode (i.e., the A high). ...
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FlashFile™ MEMORY 2.1 Lead Descriptions (Continued) Symbol Type RY/BY# OPEN DRAIN READY/BUSY: Indicates status of the internal WSM. When low, it OUTPUT indicates that the WSM is busy performing an operation. RY/BY# floating indicates that the WSM is ready ...
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... NOTE: 56-lead TSOP Mechanical Diagrams and dimensions are shown at the end of this datasheet. Figure 2. 28F016SV 56-Lead TSOP Pinout Configuration Shows Compatibility with 28F016SA/28F032SA 28F016SV FlashFile™ MEMORY E28F016SV 45 56-LEAD TSOP PINOUT TOP VIEW 28F016SA 28F032SA WP# WP# WP# WE# WE# WE# OE# OE# OE# RY/BY# RY/BY# ...
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FlashFile™ MEMORY 28F016SA 3/5# 3/ ...
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E 3.0 MEMORY MAPS A [20-0] 1FFFFF 64-Kbyte Block 1F0000 1EFFFF 64-Kbyte Block 1E0000 1DFFFF 64-Kbyte Block 1D0000 1CFFFF 64-Kbyte Block 1C0000 1BFFFF 64-Kbyte Block 1B0000 1AFFFF 64-Kbyte Block 1A0000 19FFFF 64-Kbyte Block 190000 18FFFF 64-Kbyte Block 180000 17FFFF 64-Kbyte ...
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FlashFile™ MEMORY 3.1 Extended Status Registers Memory Map A[20-0] x8 MODE 1F0006H RESERVED 1F0005H GSR 1F0004H RESERVED 1F0003H BSR 31 1F0002H RESERVED 1F0001H RESERVED 1F0000H . . . 010002H RESERVED 000006H RESERVED 000005H GSR 000004H RESERVED 000003H BSR 0 ...
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E 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS 4.1 Bus Operations for Word-Wide Mode (BYTE Mode Notes RP# Read 1,2 Output Disable 1,6 Standby 1,6 Deep Power-Down 1 Manufacturer ...
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FlashFile™ MEMORY 4.3 28F008SA—Compatible Mode Command Bus Definitions Command Notes Read Array Intelligent Identifier 1 Read Compatible Status Register 2 Clear Status Register 3 Word/Byte Program Alternate Word/Byte Program Block Erase/Confirm Erase Suspend/Resume ADDRESS AA = Array Address BA ...
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E 4.4 28F016SV—Performance Enhancement Command Bus Definitions Command Mode Notes First Bus Cycle Oper Read Extended 1 Write Status Register Page Buffer Swap 7 Write Read Page Buffer Write Single Load to Page Write Buffer Sequential Load to x8 4,6,10 ...
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... Page Buffer locations, after the Upload Device Information command is written, are reserved for future implementation by Intel Corporation. See Section 4.8 for a description of the Device Configuration Code. This code also corresponds to data written to the 28F016SV after writing the RY/BY# Reconfiguration command. ...
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E 4.5 Compatible Status Register WSMS ESS CSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy CSR.6 = ERASE-SUSPEND STATUS 1 = Erase Suspended 0 = Erase in Progress/Completed CSR.5 = ERASE STATUS ...
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FlashFile™ MEMORY 4.6 Global Status Register WSMS OSS DOS GSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy GSR.6 = OPERATION SUSPEND STATUS 1 = Operation Suspended 0 = Operation in Progress/Completed GSR.5 ...
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E 4.7 Block Status Register BS BLS BOS BSR.7 = BLOCK STATUS 1 = Ready 0 = Busy BSR.6 = BLOCK LOCK STATUS 1 = Block Unlocked for Program/Erase 0 = Block Locked for Program/Erase BSR.5 = ...
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... These bits are reserved for future use; mask them out when reading the Device Configuration Code. Set these bits to “0” when writing the desired RY/BY# configuration to the device RB2 RB1 NOTES: Undocumented combinations of RB2–RB0 are reserved by Intel Corporation for future implementations and should not be used. E RB0 0 ...
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E 5.0 ELECTRICAL SPECIFICATIONS 5.1 Absolute Maximum Ratings* Temperature Under Bias ....................0°C to +80°C Storage Temperature ...................–65°C to +125° 3.3V ± 0.3V Systems CC Sym Parameter T Operating Temperature, Commercial with Respect to GND CC ...
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FlashFile™ MEMORY 5.2 Capacitance For a 3.3V ± 0.3V System: Sym Parameter C Capacitance Looking into an IN Address/Control Pin C Capacitance Looking into an OUT Output Pin C Load Capacitance Driven by LOAD Outputs for Timing Specifications For ...
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E 2.4 2.0 INPUT 0.8 0.45 AC test inputs are driven at V (2.4 VTTL) for a Logic “1” and V OH (2.0 VTTL) and V (0.8 VTTL). Output timing ends Figure 7. Transient Input/Output Reference Waveform ...
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FlashFile™ MEMORY 2 Transmission Line From Output under Test Total Capacitance = 100 pF Figure 9. Transient Equivalent Testing Load Circuit (28F016SV-070/-080 From Output under Test Total Capacitance = 50 ...
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E 5.3 DC Characteristics V = 3.3V ± 10% 0°C to +70°C, –40°C to +70° 3/5# = Pin Set High for 3.3V Operations Temp Commercial Sym Parameter Notes Min I Input Load 1 LI Current I ...
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FlashFile™ MEMORY 5.3 DC Characteristics (Continued 3.3V ± 10% 0°C to +70°C, –40°C to +70° 3/5# = Pin Set High for 3.3V Operations Temp Commercial Sym Parameter Notes Min Read ...
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E 5.3 DC Characteristics (Continued 3.3V ± 10% 0°C to +70°C, –40°C to +70° 3/5# = Pin Set High for 3.3V Operations Temp Commercial Sym Parameter Notes Min I V Program 1,6 PPW PP ...
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FlashFile™ MEMORY 5.3 DC Characteristics (Continued 3.3V ± 0.3V 0°C to +70°C , –40°C to +85° 3/5# = Pin Set High for 3.3V Operations Temp Sym Parameter Notes V 1 Output High 6 ...
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E 5.4 DC Characteristics ± 0.5V, 5V ± 0.25V 0°C to +70°C, –40°C to +85° 3/5# = Pin Set Low for 5V Operations Temp Commercial Sym Parameter Notes Min I Input Load 1 ...
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FlashFile™ MEMORY 5.4 DC Characteristics (Continued ± 0.5V, 5V ± 0.25V 0°C to +70°C, –40°C to +85° 3/5# = Pin Set Low for 5V Operations Temp Commercial Sym Parameter Notes Min I ...
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E 5.4 DC Characteristics (Continued ± 0.5V, 5V ± 0.25V 0°C to +70°C, –40°C to +85° 3/5# = Pin Set Low for 5V Operations Temp Commercial Sym Parameter Notes Min I V Program ...
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FlashFile™ MEMORY 5.4 DC Characteristics (Continued ± 0.5V, 5V ± 0.25V 0°C to +70°C, –40°C to +85° 3/5# = Pin Set Low for 5V Operations Temp Sym Parameter Notes V Output Low ...
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E 5.5 Timing Nomenclature All 3.3V system timings are measured from where signals cross 1.5V. For 5V systems use the standard JEDEC cross point definitions (standard testing) or from where signals cross 1.5V (high speed testing). Each timing parameter consists ...
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FlashFile™ MEMORY 5.6 AC Characteristics—Read Only Operations V = 3.3V ± 0.3V 0°C to +70°C, –40°C to +85° Temp Sym Parameter Speed Notes t Read Cycle Time AVAV t Address to Output Delay AVQV t ...
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E 5.6 AC Characteristics—Read Only Operations ± 0.5V, 5V ± 0.25V 0°C to +70°C, –40°C to +85° Temp Speed Sym Parameter V CC Load Notes t Read Cycle Time AVAV t Address to ...
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FlashFile™ MEMORY NOTES: 1. See AC Input/Output Reference Waveforms for timing measurements, Figures 7 and 8. 2. OE# may be delayed after the falling edge of CE#, without impacting t ELQV GLQV 3. Sampled, not ...
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E STANDBY DEVICE AND ADDRESS SELECTION V POWER- ADDRESSES (A) ADDRESSES STABLE (1) CEx# ( AVEL OE# (G) t AVGL WE# ( ...
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FlashFile™ MEMORY V IH ADDRESSES ( (1) CEx #( AVFL AVEL OE# ( ELFL t AVGL V IH BYTE# ( ELQV IL ...
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E 5.7 Power-Up and Reset Timings V POWER-UP CC RP# t YHPH (P) 3/5# (Y) 3. (3V,5V PHEL3 Address (A) t AVQV Data Valid 3.3V Outputs (Q) t PHQV Figure 14 ...
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FlashFile™ MEMORY 5.8 AC Characteristics for WE#—Controlled Command Write Operations V = 3.3V ± 0.3V 0°C to +70°C; –40°C to +85° Temp Sym Parameter Speed Notes t Write Cycle Time AVAV t 1,2 V Setup ...
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E 5.8 AC Characteristics for WE#—Controlled Command Write Operations (Continued 3.3V ± 0.3V 0°C to +70°C; –40°C to +85° Temp Sym Parameter Speed Notes t 1 Duration of Program 3,4,5, WHQV Operation 11 t ...
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FlashFile™ MEMORY 5.8 AC Characteristics for WE#—Controlled Command Write Operations (Continued ± 0.5V, 5V ± 0.25V 0°C to +70°C, –40°C to +85° Temp Speed Sym Parameter V CC Load Notes Min t ...
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E 5.8 AC Characteristics for WE#—Controlled Command Write Operations (Continued ± 0.5V, 5V ± 0.25V 0°C to +70°C, –40°C to +85° Temp Speed Sym Parameter V CC Load Notes Min t RP# High ...
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FlashFile™ MEMORY WRITE VALID ADDRESS DEEP WRITE DATA-WRITE OR & DATA (DATA-WRITE) OR POWER-DOWN ERASE SETUP COMMAND ERASE CONFIRM COMMAND V IH ADDRESSES ( NOTE AVAV t AVWH V IH ADDRESSES (A) A ...
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E 5.9 AC Characteristics for CE#—Controlled Command Write Operations V = 3.3V ± 0.3V 0°C +70°C, –40°C +85° Temp Sym Parameter Speed Notes t Write Cycle Time AVAV t 1,2 V Setup to CE# 3,7 VPEH ...
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FlashFile™ MEMORY 5.9 AC Characteristics for CE#—Controlled Command Write Operations (Continued 3.3V ± 0.3V 0°C +70°C, –40°C +85° Temp Sym Parameter Speed Notes t 1,2 V Hold from Valid 3 QVVL PP Status ...
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E 5.9 AC Characteristics for CE#—Controlled Command Write Operations (Continued ± 0.5V, 5V ± 0.25V 0° to +70°C, –40°C to +85° Temp Speed Sym Parameter V CC Load Notes Min t Write Cycle ...
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FlashFile™ MEMORY 5.9 AC Characteristics for CE#—Controlled Command Write Operations (Continued ± 0.5V, 5V ± 0.25V 0° to +70°C, –40°C to +85° Temp Speed Sym Parameter V CC Load Notes Min t ...
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E WRITE VALID ADDRESS DEEP WRITE DATA-WRITE OR & DATA (DATA-WRITE) OR POWER-DOWN ERASE SETUP COMMAND ERASE CONFIRM COMMAND V IH ADDRESSES ( NOTE AVAV t AVEH V IH ADDRESSES ( ...
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FlashFile™ MEMORY 5.10 AC Characteristics for WE#—Controlled Page Buffer Write Operations V = 3.3V ± 0.3V 0°C to +70°C, –40°C to +85° Sym Parameter t Address Setup to WE# Going Low AVWL ...
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CEx# (E) V Note ELWL V IH WE# ( AVWL V IH ADDRESSES ( HIGH Z DATA (D/ NOTE defined as ...
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FlashFile™ MEMORY 5.11 AC Characteristics for CE#—Controlled Page Buffer Write Operations V = 3.3V ± 0.3V 0°C to +70°C, –40°C to +85° Sym Parameter t Address Setup to CE# Going Low AVEL ...
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WE# ( WLEL V IH CEx# (E) Note AVEL V IH ADDRESSES ( HIGH Z DATA (D/ NOTE: 1. CEx# is defined as the ...
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FlashFile™ MEMORY 5.12 Erase and Word/Byte Program Performance V = 3.3V ± 0.3V ± 0.5V 0°C to +70° Symbol Parameter Page Buffer Byte Write Time Page Buffer Word Write Time t ...
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E 5.12 Erase and Word/Byte Program Performance ± 0.5V, 5V ± 0.25V ± 0.5V Symbol Parameter Page Buffer Byte Write Time Page Buffer Word Write Time t 1A Byte Program Time ...
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FlashFile™ MEMORY 6.0 MECHANICAL SPECIFICATIONS Figure 19. Mechanical Specifications of the 28F016SV 56-Lead TSOP Type I Package Family: Thin Small Out-Line Package Symbol Minimum 0.050 A 2 0.965 b 0.100 c 0.115 D 1 18.20 E ...
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Figure 20. Mechanical Specifications of the 28F016SV 56-Lead SSOP Type I Package Family: Shrink Small Out-Line Package Symbol Minimum A A1 0.47 A2 1.18 B 0.25 C 0.13 D 23.40 E 13. ...
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... DA = Commercial Temp. 56-Lead SSOP E = Commercial Temp. 56-Lead TSOP T = Extended Temp. 56-Lead SSOP Device Density 016 = 16 Mbit Option Order Code V CC 1.5V I/O Levels 1 E28F016SV 070 E28F016SV-120 2 E28F016SV 065 E28F016SV-075 3 DA28F016SV 070 DA28F016SV-120 4 DA28F016SV 065 DA28F016SV-075 5 DT28F016SV 080 DT28F016SV-100 NOTE: 1. See Section 5.2 for Transient Input/Output Reference Waveforms and Testing Load Circuits. ...
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E ADDITIONAL INFORMATION Order Number 297372 16-Mbit Flash Product Family User’s Manual 290429 28F008SA Datasheet DD28F032SA 32-Mbit (2 bit x 16, 4 Mbit x 8) FlashFile™ Memory 290490 Datasheet) 292092 AP-357 Power Supply Solutions for Flash Memory 292123 AP-374 Flash ...