E28F016XD-85 Intel Corporation, E28F016XD-85 Datasheet
E28F016XD-85
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E28F016XD-85 Summary of contents
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E 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY Access Time (t ) RAC Supports both Standard and Fast- Page-Mode Accesses n Multiplexed Address Bus RAS# and CAS# Control Inputs n No-Glue Interface to Many Memory Controllers ...
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... Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683 COPYRIGHT © INTEL CORPORATION, 1996 CG-041493 ...
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E 1.0 INTRODUCTION ......................................... 5 1.1 Product Overview...................................... 5 2.0 DEVICE PINOUT......................................... 6 2.1 Lead Descriptions ..................................... 9 3.0 MEMORY MAPS ....................................... 11 3.1 Extended Status Registers Memory Map ........................................ 12 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS.......... 13 ...
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FLASH MEMORY REVISION HISTORY Number -001 Original Version Removed support of the following features: -002 All page buffer operations (read, write, programming, Upload Device Information) Command queuing Software Sleep and Abort Erase All Unlocked Blocks Device Configuration command Changed ...
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E 1.0 INTRODUCTION The documentation of the Intel 28F016XD flash memory device includes this datasheet, a detailed user’s manual, and a number of application notes and design tools, all of which are referenced in Appendix B. The datasheet is intended ...
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FLASH MEMORY block. In addition, the 28F016XD has a master Write Protect pin (WP#) which prevents any modifications to memory blocks whose lock-bits are set. Writing of memory data is performed in word increments typically within 6 µs (12.0V ...
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E DQ 8-15 Output Buffer Input Buffer/ Address RAS# De-Mux Y CAS# Decoder Address Register X Decoder Figure 1. 28F016XD Block Diagram Architectural Evolution Includes Multiplexed Address Bus, SmartVoltage Technology, and Extended Registers 28F016XD FLASH MEMORY DQ 0-7 Output Input ...
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... FLASH MEMORY 3/5# 1 GND RAS# 10 CAS GND RP GND Figure 2. 28F016XD 56-Lead TSOP Type I Pinout Configuration 8 E28F016XD 56-LEAD TSOP PINOUT TOP VIEW E 56 WP# 55 WE# 54 OE# 53 RY/BY GND GND 0533_02 ...
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E 2.1 Lead Descriptions Symbol Type A –A INPUT MULTIPLEXED ROW/COLUMN ADDRESSES: Selects a word within 0 9 one of thirty-two 32-Kword blocks. Row (upper) addresses are latched on the falling edge of RAS#, while column (lower) addresses are latched ...
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FLASH MEMORY 2.1 Lead Descriptions (Continued) Symbol Type 3/5# INPUT 3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V operation. 3/5# low configures internal circuits for 5.0V operation. Reading the array with 3/5# high in a 5.0V system ...
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E 3.0 MEMORY MAPS A [19-0] EFFFF DFFFF CFFFF BFFFF NOTE: The upper 10 bits (A ) reflect 28F016XD addresses A 19–10 The lower 10 bits (A ) reflect 28F016XD addresses A 9–0 Figure 3. 28F016XD Memory Map 28F016XD FLASH ...
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FLASH MEMORY 3.1 Extended Status Registers Memory Map NOTE: The upper 10 bits (A ) reflect 28F016XD addresses A 19–10 The lower 10 bits (A ) reflect 28F016XD addresses A 9–0 Figure 4. Extended Status Registers Memory Map 12 ...
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E 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS 4.1 Bus Operations Mode Notes Row Address Latch 1,2,9 Column Address Latch 1,2,9 Read 1,2,7 Output Disable 1,6,7 Standby 1,6,7 Deep Power-Down 1,3 Manufacturer ID 4,8 Device ID 4,8 Write 1,5,6 ...
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FLASH MEMORY 4.2 28F008SA—Compatible Mode Command Bus Definitions Command Notes Read Array Intelligent Identifier 1 Read Compatible Status Register 2 Clear Status Register 3 Word Program Alternate Word Program Block Erase/Confirm Erase Suspend/Resume ADDRESS AA = Array Address BA ...
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E 4.3 28F016XD—Enhanced Command Bus Definitions Command Notes Read Extended Status Register 1 Lock Block/Confirm Upload Status Bits/Confirm 2 ADDRESS BA = Block Address RA = Extended Register Address PA = Program Address X = Don’t Care NOTES ...
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FLASH MEMORY 4.4 Compatible Status Register WSMS ESS CSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy CSR.6 = ERASE-SUSPEND STATUS 1 = Erase Suspended 0 = Erase In Progress/Completed CSR.5 = ...
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E 4.5 Global Status Register WSMS OSS DOS GSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy GSR.6 = OPERATION SUSPEND STATUS 1 = Operation Suspended 0 = Operation in Progress/Completed GSR.5 = DEVICE ...
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FLASH MEMORY 4.6 Block Status Register BS BLS BOS BSR.7 = BLOCK STATUS 1 = Ready 0 = Busy BSR.6 = BLOCK LOCK STATUS 1 = Block Unlocked for Program/Erase 0 = Block Locked for Program/Erase ...
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E 5.0 ELECTRICAL SPECIFICATIONS 5.1 Absolute Maximum Ratings* Temperature Under Bias ....................0°C to +80°C Storage Temperature ...................–65°C to +125° 3.3V ± 0.3V Systems CC Sym Parameter T Operating Temperature, Commercial with Respect to GND CC ...
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FLASH MEMORY 5.2 Capacitance For a 3.3V ± 0.3V System: Sym Parameter C Capacitance Looking into an IN Address/Control Pin C Capacitance Looking into an OUT Output Pin C Load Capacitance Driven by LOAD Outputs for Timing Specifications For ...
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E 5.3 Transient Input/Output Reference Waveforms 2.4 2.0 INPUT 0.8 0.45 AC test inputs are driven at V (2.4 VTTL) for a Logic “1” and V OH (2.0 VTTL) and V (0.8 VTTL). Output timing ends Figure ...
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FLASH MEMORY 5.4 DC Characteristics V = 3.3V ± 0.3V 0°C to +70° 3/5# = Pin Set High for 3.3V Operations Sym Parameter Notes Word Read 1,4 Current I 2 ...
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E 5.4 DC Characteristics (Continued 3.3V ± 0.3V 0°C to +70° 3/5# = Pin Set High for 3.3V Operations Sym Parameter Notes I V Word Program 1,6 CCW CC Current I V Block Erase ...
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FLASH MEMORY NOTES: 1. All currents are in RMS unless otherwise noted. Typical values specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ...
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E 5.5 DC Characteristics V = 5.0V ± 0.5V 0°C to +70° 3/5# = Pin Set Low for 5.0V Operations Sym Parameter Notes Word Read 1,4 Current Standby ...
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FLASH MEMORY 5.5 DC Characteristics (Continued 5.0V ± 0.5V 0°C to +70° 3/5# = Pin Set Low for 5.0V Operations Sym Parameter Notes I V Word Program 1,6 CCW CC Current I V ...
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E NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at V currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a TTL rise/fall time of <10 ns specified ...
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FLASH MEMORY (11) 5.6 AC Characteristics V = 3.3V ± 0.3V 0°C to +70° Read, Program, Read-Modify-Program and Refresh Cycles (Common Parameters) Versions Sym Parameter t RAS# precharge time RP t CAS# precharge time CP ...
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E Read Cycle (Continued) Versions Sym Parameter t RAS# hold time referenced to OE# ROH t Read command setup time RCS t Read command hold time referenced to CAS# RCH t Read command hold time referenced to RAS# RRH t ...
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FLASH MEMORY Read-Modify-Write Cycle Versions Sym Parameter t Read-modify-write cycle time RWC t RAS# to WE# delay time RWD t CAS# to WE# delay time CWD t Column address to WE# delay time AWD t OE# command hold time ...
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E Refresh Cycle Versions Sym Parameter t CAS# set-up time (CAS#-before-RAS# refresh) CSR t CAS# hold time (CAS#-before-RAS# refresh) CHR t WE# setup time (CAS#-before-RAS# refresh) WRP t WE# hold time (CAS#-before-RAS# refresh) WRH t RAS# precharge to CAS# hold ...
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FLASH MEMORY NOTES: 1. Operation within the t limit insures that t RCD(max) 2. Assumes that RCD RCD(max are referenced WCR DHR RAD(max defines ...
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E (11) 5.7 AC Characteristics V = 5.0V ± 0.5V 0°C to +70° Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) Versions Sym Parameter t RAS# precharge time RP t CAS# precharge time CP t Row ...
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FLASH MEMORY Read Cycle Versions Sym Parameter t Random read cycle time RC(R) t RAS# pulse width (reads) RAS(R) t CAS# pulse width (reads) CAS(R) t RAS# to CAS# delay time (reads) RCD(R) t RAS# hold time (reads) RSH(R) ...
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E Write Cycle Versions Sym Parameter t Random write cycle time RC(W) t RAS# pulse width (writes) RAS(W) t CAS# pulse width (writes) CAS(W) t RAS# to CAS# delay time (writes) RCD(W) t RAS# hold time (writes) RSH(W) t CAS# ...
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FLASH MEMORY Fast Page Mode Cycle Continued Versions Sym Parameter t RAS# pulse width (reads) RASP(R) t RAS# pulse width (writes) RASP(W) t Access time from CAS# precharge CPA t WE# delay time from CAS# precharge CPW t RAS# ...
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E Misc. Specifications Versions Parameter RP# high to RAS# going low RP# set-up to WE# going low V PP set-up to CAS# high at end of write cycle WE# high to RY/BY# going low RP# hold from valid status register ...
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FLASH MEMORY 5.8 AC Waveforms RAS# t RCD t T CAS# t RAD RAH ASR ASC Row Address t RCS WE# t DZC Din t OE# t RAC Dout Figure 7. AC Waveforms for Read Operations ...
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E RAS# t RCD t T CAS RAH ASR ASC Row Column Address t WCS WE Din Dout Figure 8. AC Waveforms for Early Write Operations 28F016XD FLASH MEMORY RAS RP ...
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FLASH MEMORY RAS# t RCD t T CAS RAH ASR ASC Row Address t RCS WE# t DZC Din t DZO OE# t CLZ Dout Figure 9. AC Waveforms for Delayed Write Operations ...
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E RAS# t RCD t T CAS# t RAD ASR RAH ASC Row Address t RCS WE# t DZC OPEN Din t DZO OE# t RAC Dout t CLZ Figure 10. AC Waveforms for Read-Modify-Write Operations 28F016XD ...
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FLASH MEMORY RAS CSH t t RCD CAS# t RAD t CAL ASR RAH ASC CAH Address Row Column 1 t RCS WE# t DCZ OPEN Din t DZO OE# t RAC ...
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E RAS CSH t RCD CAS ASC ASR RAH Row Column 1 Address t WCS WE Din Din 1 Dout Figure 12. AC Waveforms for Fast Page Mode Early Write Operations 28F016XD ...
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FLASH MEMORY RAS CSH t RCD CAS# t RAD t t ASR t RAH Address Row Column 1 t RCS WE# t DZC Din t DZO t OED OE# t CLZ Dout : Don’t Care Invalid ...
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E RAS RCD CAS# t RAD t t ASR ASC t t RAH Address Column 1 Row t RWD t AWD t CWD WE# t RCS t DZC Din t DZO t OED t OEA OE# t ...
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FLASH MEMORY RAS CAS ASR RAH Address ROW t OFF Dout Figure 15. AC Waveforms for RAS#-Only Refresh Operations RAS RPC CRP OPEN OE#,WE# : Don’t ...
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RAS RPC CSR CAS# t WRP WE# Address t OFF Dout Figure 16. AC Waveforms for CAS#-before-RAS# Refresh Operations 28F016XD FLASH MEMORY RAS ...
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FLASH MEMORY RAS RAS RSH t RCD CAS RAD RAL t ASR t CAH t t ASC RAH Row Column Address t RCS WE# t DZC Din t DZO t OEA ...
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E RAS# t RPC t t CPN CSR CAS# t OFF O n Figure 18. AC Waveforms for Self-Refresh Operations 28F016XD FLASH MEMORY t t RASS RPS t CHS HI-Z 0533_18 49 ...
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FLASH MEMORY 5.9 Power-Up and Reset Timings V POWER-UP CC RP# t YHPH (P) 3/5# (Y) 3. (3V,5V) Figure 19 Symbol Parameter t RP# Low to 3/5# Low (High) PLYL t PLYH t 3/5# ...
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E 5.10 Erase and Word Program Performance V = 3.3V ± 0.3V 5.0V ± 0.5V 0°C to +70° Symbol Parameter t 1 Word Program Time WHRH t 3 Block Program Time WHRH Block ...
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FLASH MEMORY 6.0 MECHANICAL SPECIFICATIONS Figure 20. Mechanical Specifications of the 28F016XD 56-Lead TSOP Type I Package Family: Thin Small Out-Line Package Symbol Minimum 0.050 A 2 0.965 b 0.100 c 0.115 D 1 18.20 E ...
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... CC 1.5V I/O Levels E28F016XD 85 NOTE: 1. See Section 5.3 for Transient Input/Output Reference Waveforms. 28F016XD FLASH MEMORY APPENDIX Random Access Time ( ns) RAC CC Device Type D = DRAM-Interface Valid Combinations V = 5.0V ± 10%, 100 pF load, CC (1) TTL I/O Levels E28F016XD-95 E28F016XD-85 0533_21 (1) 53 ...
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FLASH MEMORY ADDITIONAL INFORMATION Order Number 297372 16-Mbit Flash Product Family User’s Manual 292092 AP-357 Power Supply Solutions for Flash Memory 292123 AP-374 Flash Memory Write Protection Techniques 292126 AP-377 16-Mbit Flash Product Family Software Drivers, 28F016SA/SV/XD/XS 292131 AP-384 ...