K4S641632F-TC75 Samsung, K4S641632F-TC75 Datasheet
K4S641632F-TC75
Specifications of K4S641632F-TC75
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K4S641632F-TC75 Summary of contents
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... K4S641632F 64Mbit SDRAM 1M x 16Bit x 4 Banks * Samsung Electronics reserves the right to change products or specification without notice. Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 CMOS SDRAM Rev.0.1 Sept. 2001 ...
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... K4S641632F Revision History Revision 0.0 (June, 2001) Revision 0.1 (Sep., 2001) • Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. ...
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... ORDERING INFORMATION Part No. K4S641632F-TC50/TL50 K4S641632F-TC55/TL55 K4S641632F-TC60/TL60 K4S641632F-TC70/TL70 K4S641632F-TC75/TL75 K4S641632F-TC1H/TL1H 100MHz(CL=2) K4S641632F-TC1L/TL1L Data Input Register Column Decoder Latency & Burst Length ...
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... K4S641632F PIN CONFIGURATION (Top view) A10/AP PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable L(U)DQM Data input/output mask DQ ~ Data input/output 0 15 ...
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... AC. The overshoot voltage duration (min) = -2.0V AC. The undershoot voltage duration Any input DDQ Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S641632F-55/60 is 3.135V~3.6V. CAPACITANCE (V = 3.3V Pin Clock RAS, CAS, WE, CS, CKE, DQM Address ...
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... Page burst I CC4 (Burst mode) 4Banks Activated t CCD Refresh current I t CC5 RC Self refresh current I CKE CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S641632F-TC** 4. K4S641632F-TL** 5. Unless otherwise noted, input swing IeveI is CMOS Test Condition t (min (max 10ns (max (min), CS ...
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... Output timing measurement reference level Output load condition Output 870 (Fig output load circuit Notes : 1. The DC/AC Test Output Load of K4S641632F-50/55/60 is 30pF. 2. The VDD condition of K4S641632F-50/55/60 is 3.135V~3.6V. OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay ...
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... K4S641632F AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle t CC time CAS latency=2 CAS latency=3 CLK to valid t SAC output delay CAS latency=2 CAS latency=3 Output data t OH hold time CAS latency=2 CLK high pulse width t CH CLK low pulse width ...
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... K4S641632F IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284 ...
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... K4S641632F V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & DQ ...
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... K4S641632F SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable ...