TLP627A TOSHIBA Semiconductor CORPORATION, TLP627A Datasheet

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... The TOSHIBA TLP627A, -2, and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor which has a 350V high voltage of collector-emitter breakdown voltage. The TLP627A-2 offer two isolated channels in a eight lead plastic DIP package, while the TLP627A-4 provide four isolated channels per package. Collector-Emitter Voltage ...

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... Reverse Current Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Collector to Emitter TLP627A,TLP627A-2,TLP627A-4 (Ta = 25°C) RATING SYMBOL TLP627A−2 TLP627A TLP627A− /℃ −0.7 (Ta≧39℃) −0.5 (Ta≧25℃) Δ (100μs Pulse、100 pps ...

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... Capacitance Input to Output Isolation Resistance Isolation Voltage Switching Characteristics CHARACTERISTICS Rise Time Fall Time Turn-on Time Turn-off Time Turn-on Time Strage Time Turn-off Time Fig.1: SWITCHING TIME TEST CIRCUIT TLP627A,TLP627A-2,TLP627A-4 (Ta = 25°C) SYMBOL TEST CONDITION mA ...

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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. TLP627A,TLP627A-2,TLP627A-4 4 20070701-EN 2007-10-01 ...