CY7C1021BL-12VC Cypress Semiconductor Corporation., CY7C1021BL-12VC Datasheet

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CY7C1021BL-12VC

Manufacturer Part Number
CY7C1021BL-12VC
Description
64K x 16 Static RAM, 5V, 12ns
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05145 Rev. *B
Features
Functional Description
The CY7C1021B/10211B is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
• Temperature Ranges
• High speed
• CMOS for optimum speed/power
• Low active power
• Automatic power-down when deselected
• Independent control of upper and lower bits
• Available in 44-pin TSOP II and 400-mil SOJ
• Also available in Lead (Pb)-Free 44-pin TSOP II
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
— t
— t
— 825 mW (max.)
AA
AA
= 10 ns (Commercial & Industrial)
= 15 ns (Automotive)
A
A
A
A
A
A
A
A
5
4
3
2
1
0
7
6
[1]
DATA IN DRIVERS
COLUMN DECODER
512 X 2048
RAM Array
64K x 16
3901 North First Street
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1021B/10211B is available in standard 44-pin
TSOP Type II and 400-mil-wide SOJ packages. Customers
should use part number CY7C10211B when ordering parts
with 10-ns t
t
AA
.
1-Mbit (64K x 16) Static RAM
15
AA
). If Byte High Enable (BHE) is LOW, then data
, and CY7C1021B when ordering 12- and 15-ns
San Jose
9
through I/O
1
to I/O
,
CA 95134
I/O
I/O
1
BHE
WE
CE
OE
BLE
1
9
through I/O
–I/O
–I/O
8
. If Byte High Enable (BHE) is
16
0
) is written into the location
through A
8
16
Revised April 29, 2005
CY7C10211B
16
CY7C1021B
) are placed in a
1
15
through I/O
).
408-943-2600
9
to I/O
16
. See
8
), is
0
[+] Feedback

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CY7C1021BL-12VC Summary of contents

Page 1

Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • High speed — (Commercial & Industrial) AA — (Automotive) AA • CMOS ...

Page 2

Selection Guide Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Pin Configurations Pin Definitions Pin Name SOJ, TSOP–Pin Number A –A 1–5,18–21, 24–27, 42– I/O –I/O 7–10, 13–16, 29–32 35–38 NC ...

Page 3

Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage Relative GND CC DC Voltage ...

Page 4

Capacitance Parameter Description C Input Capacitance IN C Output Capacitance OUT AC Test Loads and Waveforms R 481Ω R 481Ω OUTPUT OUTPUT OUTPUT OUTPUT 255Ω 255Ω INCLUDING INCLUDING INCLUDING INCLUDING JIG ...

Page 5

Switching Characteristics Over the Operating Range (continued) Parameter Description t Data Hold from Write End HD [ HIGH to Low Z LZWE [ LOW to High Z HZWE t Byte Enable to End of ...

Page 6

Switching Waveforms (continued) [13, 14] Write Cycle No. 1 (CE Controlled) ADDRESS ADDRESS BHE, BLE DATA I/O Write Cycle No. 2 (BLE or BHE Controlled) ADDRESS t SA BHE, BLE WE CE DATA I/O Notes: 12. ...

Page 7

... High High High Z Ordering Information Speed (ns) Ordering Code 10 CY7C10211B-10VC CY7C10211B-10ZC CY7C10211BL-10ZC 12 CY7C1021B-12VC CY7C1021B-12VXC CY7C1021B-12VI CY7C1021B-12VXI CY7C1021BL-12VC CY7C1021B-12ZC CY7C1021B-12ZXC Document #: 38-05145 Rev SCE PWE HZWE SD –I/O I/O –I High Z Power-Down ...

Page 8

... Ordering Code 12 CY7C1021B-12ZI CY7C1021BL-12ZC 15 CY7C1021B-15VC CY7C1021B-15VXC CY7C1021B-15VI CY7C1021B-15VXI CY7C1021BL-15VC CY7C1021BL-15VXC CY7C1021B-15VE CY7C1021B-15VXE CY7C1021B-15ZC CY7C1021B-15ZXC CY7C1021B-15ZI CY7C1021B-15ZXI CY7C1021BL-15ZC CY7C1021BL-15ZXC CY7C1021B-15ZE CY7C1021B-15ZSXE Package Diagrams 44 1 1.120 1.130 0.095 0.115 0.023 0.045 0.033 MAX. 0.013 0.023 Document #: 38-05145 Rev. *B Package Name Package Type ...

Page 9

Package Diagrams (continued) All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05145 Rev. *B © Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. ...

Page 10

Document History Page Document Title: CY7C1021B/CY7C10211B (64K x 16) Static RAM Document Number: 38-05145 Orig. of REV. ECN NO. Issue Date Change ** 109889 09/22/01 *A 238454 See ECN *B 361795 See ECN Document #: 38-05145 Rev. *B Description of ...

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