MRF19030 Freescale Semiconductor, Inc, MRF19030 Datasheet

no-image

MRF19030

Manufacturer Part Number
MRF19030
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF19030LR3
Manufacturer:
ISC
Quantity:
4 523
Part Number:
MRF19030LSR3
Manufacturer:
BROADCOM
Quantity:
85
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for class AB PCN and PCS base station applications with
Output Power
Derate above 25°C
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc in 30 kHz BW
1.25 MHz — - 55 dBc in 12.5 kHz BW
2.25 MHz — - 55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF19030
1930- 1990 MHz, 30 W, 26 V
MRF19030LSR3
MRF19030LR3
LATERAL N - CHANNEL
MRF19030LR3 MRF19030LSR3
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
CASE 465F - 04, STYLE 1
M3 (Minimum)
2 (Minimum)
MRF19030LSR3
- 65 to +150
MRF19030LR3
- 0.5, +65
- 0.5, +15
Value
Value
Class
83.3
0.48
NI - 400S
150
200
2.1
NI - 400
Rev. 12, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

Related parts for MRF19030

MRF19030 Summary of contents

Page 1

... Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF19030 Rev. 12, 5/2006 MRF19030LR3 MRF19030LSR3 1930- 1990 MHz LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 ...

Page 2

... MHz and f1 = 1990.0 MHz 1990.1 MHz) Input Return Loss ( Vdc PEP 300 mA 1930.0 MHz, DD out 1930.1 MHz and f1 = 1990.0 MHz 1990.1 MHz) 1. Part is internally matched both on input and output. MRF19030LR3 MRF19030LSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS ...

Page 3

... C9 22 μF Tantalum Chip Capacitor C10 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors Ω Chip Resistors (0805) Z1 0.080″ x 0.595″ Microstrip Z2 0.080″ x 0.600″ Microstrip Figure 1. MRF19030LR3(SR3) Test Circuit Schematic RF Device Data Freescale Semiconductor C10 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout MRF19030LR3 MRF19030LSR3 4 ...

Page 5

... OUTPUT POWER (WATTS) PEP out versus Output Power = 30 W (PEP) out G ps IMD DRAIN VOLTAGE (VOLTS) DD Figure 8. Power Gain and MRF19030LR3 MRF19030LSR3 −20 −30 −40 −50 −60 −70 −80 −90 −100 12 100 −22 −24 −26 −28 −30 −32 − ...

Page 6

... MHz Z load f = 1930 MHz Figure 9. Series Equivalent Source and Load Impedance MRF19030LR3 MRF19030LSR3 1990 MHz Z source f = 1930 MHz = 25 Ω 300 mA PEP DD DQ out source load MHz Ω Ω 1930 10.57 - j7.69 5.81 - j5.01 1960 10.54 - j7.43 5.84 - j4.67 1990 10.47 - j7.21 5.84 - j4. Test circuit impedance as measured from source gate to ground ...

Page 7

... F .004 .006 0.10 0. .057 .067 1.45 1.70 K .092 .122 2.34 3.10 M .395 .405 10.03 10.29 N .395 .405 10.03 10.29 R .395 .405 10.03 10.29 S .395 .405 10.03 10.29 aaa .005 REF 0.127 REF bbb .010 REF 0.254 REF ccc .015 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF19030LR3 MRF19030LSR3 MAX 20.44 9.9 4.14 7.24 1.14 0.15 1.7 3.1 10.3 10.3 3.3 10.3 10.3 7 ...

Page 8

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF19030LR3 MRF19030LSR3 Document Number: MRF19030 Rev. 12, 5/2006 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords