MRF9080 Freescale Semiconductor, Inc, MRF9080 Datasheet

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MRF9080

Manufacturer Part Number
MRF9080
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
MRF9080
Manufacturer:
MOT
Quantity:
19
Part Number:
MRF9080R3
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
MRF9080S
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MOT
Quantity:
110
Part Number:
MRF9080SR3
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MOT
Quantity:
250
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
performance of these devices make them ideal for large–signal, common–
source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
REV 2
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for GSM 900 MHz frequency band, the high gain and broadband
Output Power
40
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
µ″ Nominal.
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
BROADBAND RF POWER MOSFETs
J
GSM 900 MHz FREQUENCY BAND,
MRF9080LSR3
MRF9080SR3
MRF9080SR3, MRF9080LSR3
MRF9080R3
LATERAL N–CHANNEL
CASE 465A–06, STYLE 1
CASE 465–06, STYLE 1
MRF9080
M1 (Minimum)
1 (Minimum)
–65 to +200
–0.5, +15
75 W, 26 V
Value
Class
MRF9080
1.43
Max
NI–780S
250
200
0.7
65
NI–780
Order this document
by MRF9080/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9080 Summary of contents

Page 1

... MRF9080 CASE 465A–06, STYLE 1 NI–780S MRF9080SR3, MRF9080LSR3 Symbol Value V 65 DSS V –0.5, + 250 D 1.43 T –65 to +200 stg T 200 J Class 1 (Minimum) M1 (Minimum) Symbol Max R 0.7 θJC MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 by MRF9080/D Unit Vdc Vdc Watts W/°C °C °C Unit °C/W 1 ...

Page 2

... 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally input matched. (2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 2 = 25°C unless otherwise noted) Symbol ...

Page 3

... TLX8–0300 r C–GY–00–001–02 MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 Manufacturer ATC ATC ATC ATC ATC Sprague–Vishay ATC ATC ATC Taconic Cibel 3 ...

Page 4

... Figure 2. Broadband GSM 900 Test Circuit Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 4 MRF9080 MOTOROLA RF DEVICE DATA ...

Page 5

... Substrate = Taconic RF35, Thickness 0.5 mm MOTOROLA RF DEVICE DATA Value, P/N or DWG Manufacturer #08051J3R9CBT AVX #08051J3R9CBT AVX #08051J221 AVX #T491X226K035AS4394 Kemet #08053G105ZATEA AVX #08051J5R18CBT AVX #08051J8R2CBT AVX #08051J2R2CBT AVX #100B ATC #3224W Bourns #BC847ALT1 ON Semiconductor #LP2951ACDM–5.0R2 ON Semiconductor #R125510001 Radial MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5 ...

Page 6

... Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 6 MRF9080 MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 9. Power Gain versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS ° ° Figure 6. Power Gain versus Output Power h Figure 8. Output Power and Efficiency versus ° h Figure 10. Output Power and Efficiency versus Input MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 ° Input Power ° ° ° Power 7 ...

Page 8

... Figure 11. Series Equivalent Input and Output Impedance MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 8 Ω Ω Ω MHz 880 0.91 + j2.11 1.22 + j0.12 920 0.88 + j2.65 1.00 + j0.16 960 1.6 + j2.61 1.22 + j0.22 1000 2.45 + j3.38 1.14 + j0.41 = Complex conjugate of source impedance Complex conjugate of the optimum load impedance at a given output power, voltage, bias current and frequency. ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 9 ...

Page 10

... MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... (LID) S (INSULATOR) SEATING T PLANE CASE 465–06 ISSUE F NI–780 MRF9080 Z R (LID) S (INSULATOR) CASE 465A–06 ISSUE F NI–780S MRF9080SR3, MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 12 MOTOROLA RF DEVICE DATA MRF9080/D ...

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