MRF19125 Freescale Semiconductor, Inc, MRF19125 Datasheet

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MRF19125

Manufacturer Part Number
MRF19125
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
I
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
DQ
Derate above 25°C
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR —
IM3 —
= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
- 37.0 dBc
- 51 dB
C
= 25°C
Test Conditions
Characteristic
Rating
DD
= 26 Volts,
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
1930- 1990 MHz, 125 W, 26 V
Document Number: MRF19125
MRF191225R3
MRF19125SR3
MRF19125SR3
LATERAL N - CHANNEL
MRF19125R3
RF POWER MOSFETs
NI - 880S
NI - 880
MRF19125R3 MRF19125SR3
M3 (Minimum)
2 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.89
0.53
330
150
200
Rev. 6, 4/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF19125 Summary of contents

Page 1

... Volts, DD CASE 465B - 03, STYLE 1 CASE 465C - 02, STYLE 1 Symbol V DSS stg Symbol R θJC Document Number: MRF19125 Rev. 6, 4/2006 MRF19125R3 MRF19125SR3 1930- 1990 MHz, 125 LATERAL N - CHANNEL RF POWER MOSFETs NI - 880 MRF191225R3 NI - 880S MRF19125SR3 Value Unit - 0.5, +65 Vdc - 0.5, +15 Vdc 330 W 1.89 W/° ...

Page 2

... Bandwidth 885 MHz and f2 +885 MHz) Input Return Loss ( Vdc Avg 1300 mA 1930 MHz, DD out 1932.5 MHz and f1 = 1987.5 MHz 1990 MHz) 1. Part is internally matched both on input and output. MRF19125R3 MRF19125SR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I GSS I DSS ...

Page 3

... C Symbol 1300 mA 1930 MHz, η = 1300 mA 1930 MHz, IMD = 1300 mA 1930 MHz, IRL = 1300 mA 1930 MHz, P1dB Min Typ Max Unit — 13.5 — dB — 35 — % — — dBc — — dB — 130 — W MRF19125R3 MRF19125SR3 3 ...

Page 4

... Microstrip Z4 0.920″ x 0.048″ Microstrip Z5 0.605″ x 1.195″ Microstrip Z6 0.800″ x 0.084″ Microstrip Z8 0.660″ x 0.095″ Microstrip Figure 1. MRF19125R3(SR3) Test Circuit Schematic Table 5. MRF19125R3(SR3) Test Circuit Component Designations and Values Designators B1 C1 C2, C7 C3, C10 C4, C11 ...

Page 5

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19125R3(SR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor ...

Page 6

... I = 1300 1960 MHz 8 6 η OUTPUT POWER (WATTS) out Figure 7. CW Performance MRF19125R3 MRF19125SR3 6 TYPICAL CHARACTERISTICS −28 − Vdc 1300 mA −35 − 1960 MHz 100 kHz Tone Spacing −42 −40 3rd Order − ...

Page 7

... IRL IMD G ps 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) 110 120 130 140 150 160 170 180 190 T , JUNCTION TEMPERATURE (° for MTTF in a particular application. D MRF19125R3 MRF19125SR3 −5 −10 −15 −20 −25 −30 −35 200 210 2 7 ...

Page 8

... MRF19125R3 MRF19125SR3 CDMA TEST SIGNAL 1.2288 MHz Channel BW −IM3 @ +IM3 @ 1.2288 MHz 1.2288 MHz Integrated BW Integrated BW −ACPR @ 30 kHz +ACPR @ 30 kHz Integrated BW Integrated BW −6 −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) Figure 14 ...

Page 9

... DD DQ out source load MHz Ω Ω 1930 1.43 - j5.01 0.75 - j0.93 1960 1.51 - j4.88 0.71 - j0.89 1990 1.56 - j4.93 0.68 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Output Matching Network MRF19125R3 MRF19125SR3 9 ...

Page 10

... MRF19125R3 MRF19125SR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF19125R3 MRF19125SR3 13.8 5.08 1.14 0.15 1.70 5.21 3.51 11 ...

Page 12

... Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF19125R3 MRF19125SR3 Document Number: Document Number: MRF19125 Rev. 6, 4/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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