MRF648

Manufacturer Part NumberMRF648
ManufacturerAdvanced Semiconductor, Inc.
MRF648 datasheet
 
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
ASI MRF648
The
is Designed for
12.5 V UHF large signal amplifier
applications up to 512 MHz.
FEATURES:
• Internal Input Matching Network
• P
= 4.4 dB at 60 W/470 MHz
G
• Omnigold™ Metalization System
MAXIMUM RATINGS
11 A
I
C
36 V
V
CBO
V
16 V
CEO
4.0 V
V
EBO
175 W @ T
= 25 °C
P
C
DISS
T
-65 °C to +200 °C
J
T
-65 °C to +150 °C
STG
θ
1.0 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
NONETEST CONDITIONS
BV
I
= 50 mA
C
CES
I
= 50 mA
BV
CEO
C
BV
I
= 5.0 Ma
E
EBO
V
= 15 V
I
CES
CE
h
V
= 5.0 V
FE
CE
V
= 12.5 V
C
OB
CB
P
G
V
= 12.5 V
CE
η
C
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
I
= 6.0 A
C
f = 1.0 MHz
P
= 60 W
f = 470 MHz
OUT
Specifications are subject to change without notice.
MRF648
PACKAGE STYLE .500 6L FLG
A
C
2x Ø N
FU LL R
D
B
E
.725/18,42
F
G
M
K
H
I
L
J
M IN IM U M
M AXIM U M
D IM
inches / m m
inches / m m
.150 / 3.43
.160 / 4.06
A
.045 / 1.14
B
.210 / 5.33
.220 / 5.59
C
.835 / 21.21
.865 / 21.97
D
.200 / 5.08
.210 / 5.33
E
.490 / 12.45
.510 / 12.95
F
.003 / 0.08
.007 / 0.18
G
.125 / 3.18
H
.725 / 18.42
I
.970 / 24.64
.980 / 24.89
J
.090 / 2.29
.105 / 2.67
K
.150 / 3.81
.170 / 4.32
L
.285 / 7.24
M
.120 / 3.05
.135 / 3.43
N
Common Emitter
MINIMUM TYPICAL MAXIMUM
36
16
4.0
15
20
150
130
150
4.4
5.0
55
65
UNITS
V
V
mA
---
pF
dB
%
REV. A
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