MRF648 Advanced Semiconductor, Inc., MRF648 Datasheet

MRF648

Manufacturer Part Number

MRF648

Description

Manufacturer

Advanced Semiconductor, Inc.

Datasheet

1.MRF648.pdf (1 pages)

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CHARACTERISTICS

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

DESCRIPTION:

The

12.5 V UHF large signal amplifier

applications up to 512 MHz.

FEATURES:

• Internal Input Matching Network

• P

• Omnigold™ Metalization System

MAXIMUM RATINGS

SYMBOL

DISS

CBO

CEO

EBO

STG

ASI MRF648

= 4.4 dB at 60 W/470 MHz

CES

CEO

EBO

CES

175 W @ T

NPN SILICON RF POWER TRANSISTOR

-65 °C to +200 °C

-65 °C to +150 °C

= 5.0 Ma

= 50 mA

1.0 °C/W

= 15 V

= 5.0 V

= 12.5 V

is Designed for

4.0 V

11 A

36 V

16 V

NONETEST CONDITIONS

= 25 °C

OUT

= 6.0 A

= 60 W

Specifications are subject to change without notice.

f = 470 MHz

f = 1.0 MHz

PACKAGE STYLE .500 6L FLG

D IM

MINIMUM TYPICAL MAXIMUM

4.0

4.4

.835 / 21.21

.490 / 12.45

.970 / 24.64

.120 / 3.05

.150 / 3.43

.210 / 5.33

.200 / 5.08

.003 / 0.08

.090 / 2.29

.150 / 3.81

M IN IM U M

inches / m m

Common Emitter

130

.725/18,42

5.0

.725 / 18.42

.045 / 1.14

.125 / 3.18

.865 / 21.97

.510 / 12.95

.980 / 24.89

M AXIM U M

.160 / 4.06

.220 / 5.59

.210 / 5.33

.007 / 0.18

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

inches / m m

2x Ø N

FU LL R

150

MRF648

UNITS

REV. A

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