2SC1946A

Manufacturer Part Number2SC1946A
ManufacturerAdvanced Semiconductor, Inc.
2SC1946A datasheet
 
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
2SC1946A
The
is Designed for
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
• High Common Emitter Power Gain
• Output Power = 30 W
MAXIMUM RATINGS
8.0 A
I
C
V
16 V
CE
36 V
V
CB
P
100 W @ T
= 25 °C
C
DISS
-65 °C to +200 °C
T
J
T
-65 °C to +150 °C
STG
θ
1.75 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
TEST CONDITIONS
BV
I
= 25 mA
CES
C
BV
I
= 25 mA
CEO
C
BV
I
= 5.0 mA
EBO
E
I
V
= 15 V
CES
CE
h
V
= 5.0 V
FE
CE
C
V
= 15 V
ob
CB
G
PE
V
= 12.5 V
CC
η
ψ
V
= 15.5 V
CC
Load VSWR = 30:1 ALL PHASE ANGLES
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
PACKAGE STYLE .380" 4L FLG
I
= 1.0 A
C
f = 1.0 MHz
P
= 30 W
f = 175 MHz
out
P
= 2.0 dB Overdrive
IN
Specifications are subject to change without notice.
2SC1946A
.112 x 45°
B
A
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
I
H
G
MINIMUM
MAXIMUM
DIM
inches / mm
inches / mm
.220 / 5.59
.230 / 5.84
A
.785 / 19.94
B
.720 / 18.29
.730 / 18.54
C
.970 / 24.64
.980 / 24.89
D
.385 / 9.78
E
.004 / 0.10
.006 / 0.15
F
.085 / 2.16
.105 / 2.67
G
.160 / 4.06
.180 / 4.57
H
.280 / 7.11
I
.240 / 6.10
.255 / 6.48
J
MINIMUM TYPICAL MAXIMUM
36
16
4.0
5.0
40
75
150
75
100
10
11
60
70
No Degradation in Power Output
UNITS
V
V
V
mA
---
pF
DB
%
REV. B
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