2SC1946A Advanced Semiconductor, Inc., 2SC1946A Datasheet

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2SC1946A

Manufacturer Part Number
2SC1946A
Description
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
DESCRIPTION:
The
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
• High Common Emitter Power Gain
• Output Power = 30 W
MAXIMUM RATINGS
CHARACTERISTICS
P
T
SYMBOL
V
V
θ
T
I
DISS
STG
JC
C
CE
CB
BV
BV
BV
J
2SC1946A
I
G
C
h
CES
ψ
η
FE
ob
PE
CES
CEO
EBO
NPN SILICON RF POWER TRANSISTOR
100 W @ T
-65 °C to +200 °C
-65 °C to +150 °C
I
I
I
V
V
V
V
V
Load VSWR = 30:1 ALL PHASE ANGLES
C
C
E
CE
CE
CB
CC
CC
= 5.0 mA
= 25 mA
= 25 mA
is Designed for
1.75 °C/W
= 15 V
= 5.0 V
= 15 V
= 12.5 V
= 15.5 V
8.0 A
16 V
36 V
C
T
= 25 °C
C
= 25 °C
TEST CONDITIONS
I
P
P
C
out
IN
= 1.0 A
= 2.0 dB Overdrive
= 30 W
Specifications are subject to change without notice.
f = 1.0 MHz
f = 175 MHz
PACKAGE STYLE .380" 4L FLG
MINIMUM TYPICAL MAXIMUM
DIM
A
B
C
D
E
F
G
H
J
I
4.0
36
16
40
10
60
F
No Degradation in Power Output
.785 / 19.94
.720 / 18.29
.970 / 24.64
.220 / 5.59
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
MINIMUM
inches / mm
B
.112 x 45°
D
75
75
11
70
C
E
A
.730 / 18.54
.980 / 24.89
MAXIMUM
.230 / 5.84
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
G
inches / mm
.125
Ø.125 NOM.
2SC1946A
H
FULL R
150
100
5.0
I
J
UNITS
REV. B
mA
DB
pF
1/1
---
%
V
V
V

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