TLP629 TOSHIBA Semiconductor CORPORATION, TLP629 Datasheet
TLP629
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TLP629 Summary of contents
Page 1
... The TOSHIBA TLP629, −2, and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP629−2 offers two isolated channels in an eight lead plastic DIP, while the TLP629−4 provides four isolated channels in a sixteen plastic DIP. This is suitable for application of DC input current up to 150mA. • ...
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... RH ≤ 60%) S Symbol Min. Typ. V ― ― ― −25 T ― opr 2 TLP629,TLP629−2,TLP629−4 Unit TLP629−2 ° ° 100 mW −1 °C °C °C °C °C 200 mW 2 °C V rms Max. Unit ...
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... C(off) F CEO (Ta = 25°C) Symbol Test Condition MHz 500 AC, 1 minute BV AC, 1 second, in oil S DC, 1 minute, in oil 3 TLP629,TLP629−2,TLP629−4 Min. Typ. Max. — 1.4 — 2.5 — — — — 7 — — 10 100 — 2 — ...
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... 100Ω off 1.9 kΩ OFF 4 TLP629,TLP629−2,TLP629−4 Min. Typ. Max. — 2 — — 3 — — — — 2 — (Fig.1) — 15 — — 25 — ...
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... TLP629,TLP629−2,TLP629−4 5 2007-10-01 ...
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... TLP629,TLP629−2,TLP629−4 6 2007-10-01 ...
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... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. TLP629,TLP629−2,TLP629−4 7 20070701-EN ...