STP3NC60FP STMicroelectronics, STP3NC60FP Datasheet

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STP3NC60FP

Manufacturer Part Number
STP3NC60FP
Description
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( )Pulse width limited by safe operating area
May 2000
STP3NC60
STP3NC60FP
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
dv/dt (1)
Symbol
I
V
DM
P
V
V
V
T
DGR
I
I
TOT
ISO
T
stg
DS
GS
TYPE
D
D
( )
j
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 3.3
600 V
600V
V
II is the evolution of the first
DSS
N-CHANNEL 600V - 3.3 - 3A TO-220/TO-220FP
R
<3.6
<3.6
DS(on)
C
GS
Parameter
= 25 C
GS
.
= 20 k )
The layout re-
= 0)
C
C
= 25 C
= 100 C
3 A
2 A
I
D
(1)I
(*)Limited only by maximum temperature allowed
SD
INTERNAL SCHEMATIC DIAGRAM
3A, di/dt 100A/ s, V
PowerMesh II MOSFET
TO-220
STP3NC60
0.64
1.9
12
80
3
-
1
2
–60 to 150
STP3NC60FP
DD
3
Value
600
600
150
3.5
30
V
(BR)DSS
STP3NC60
STP3NC60FP
TO-220FP
1.9(*)
12(*)
2000
, T
0.32
40
3
j
T
JMAX.
1
W/ C
Unit
V/ns
2
W
V
V
V
A
A
A
C
C
3
1/9

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STP3NC60FP Summary of contents

Page 1

... TO-220 INTERNAL SCHEMATIC DIAGRAM Value STP3NC60 600 600 = 100 C 1 0.64 3.5 - –60 to 150 150 (1)I 3A, di/dt 100A (*)Limited only by maximum temperature allowed STP3NC60 TO-220FP Unit STP3NC60FP 1.9(*) A 12(*) 0. V/ns 2000 (BR)DSS j JMAX. 1/9 ...

Page 2

STP3NC60/FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter t d(on) Turn-on Delay Time Rise Time Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise Time r(Voff) t Fall ...

Page 4

STP3NC60/FP Thermal Impedence for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedence for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics STP3NC60/FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

STP3NC60/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

TO-220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 8

STP3NC60/FP TO-220FP MECHANICAL DATA mm DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ...

Page 9

... STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – ...

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