UPC1658G-E1 Renesas Electronics Corporation., UPC1658G-E1 Datasheet

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UPC1658G-E1

Manufacturer Part Number
UPC1658G-E1
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
UPC1658G-E1
Manufacturer:
NEC
Quantity:
20 000
Document No. P11120EJ3V0DS00 (3rd edition)
Date Published September 1999 N CP(K)
Printed in Japan
DESCRIPTION
applications. Bandwidth and output power level can be determined according to external resistor constants of
negative feedback and final stage collector. This IC is available in 8-pin plastic SOP.
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Low noise figure
• Due to the external negative feedback circuit, the power gain can be adjustable by selecting appropriate
• Wideband response
• External resistor can vary the collector current of the final transistor in the IC to adjust the saturated output level.
APPLICATIONS
• IF buffer amplifier of high frequency system
• Measurement equipment
ORDERING INFORMATION
PC1658G-E1
The
This IC is manufactured using NEC’s 10 GHz f
resistance constants.
Remark To order evaluation samples, please contact your local NEC sales office.
Caution TO-99 CAN package ( PC1658A) and 8-pin plastic DIP package ( PC1658C) products are
Part Number
PC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system
(Part number for sample order: PC1658G)
discontinued.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
8-pin plastic SOP (225 mil)
Package
BIPOLAR ANALOG INTEGRATED CIRCUIT
: NF
: G
: G
: f
The mark
Caution Electro-static sensitive devices
3dB
P
P
= 1.0 GHz @ G
40 dB @ Without negative feedback resistor
18 dB @ With negative feedback resistor
3 dB
DATA SHEET
shows major revised points.
T
NESAT
P
= 18 dB
Marking
1658
TM
II silicon bipolar process. This process uses silicon
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
PC1658G
Supplying Form
©
1996, 1999

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UPC1658G-E1 Summary of contents

Page 1

LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER DESCRIPTION The PC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system applications. Bandwidth and output power level can be determined according to external resistor constants of negative feedback ...

Page 2

PIN CONNECTIONS (Top View PIN EXPLANATION Pin No. Pin Name Function and Applications 1 GND Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V CC Output Transistor Current I Q3 Power Dissipation P D Operating Ambient Temperature T A Storage Temperature T stg ELECTRICAL CHARACTERISTICS (T Parameter Symbol Circuit Current I CC Power Gain 1 G ...

Page 4

TEST CIRCUITS TEST CIRCUIT 1 (Low-noise amplifier) TEST CIRCUIT 2 (Wideband low-noise amplifier) TEST CIRCUIT 3 (Wideband low-noise amplifier with improved output level) 4 Input 0 0.01 ...

Page 5

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD OUT V CC Notes Back side: GND pattern 3. Solder plated on pattern 4. : Through holes COMPONENT LIST Value 0. 0.1 ...

Page 6

TYPICAL CHARACTERISTICS (T A POWER DISSIPATION vs. OPERATING AMBIENT TEMPERATURE 800 600 400 200 0 –50 0 +50 Operating Ambient Temperature T INSERTION POWER GAIN AND NOISE FIGURE vs. FREQUENCY ...

Page 7

PACKAGE DIMENSIONS 8 PIN PLASTIC SOP (225 mil) (Unit: mm NOTE Each lead centerline is located within 0. its true position (T.P.) at maximum material condition. 5 detail ...

Page 8

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with ...

Page 9

Data Sheet P11120EJ3V0DS00 PC1658G 9 ...

Page 10

Data Sheet P11120EJ3V0DS00 PC1658G ...

Page 11

Data Sheet P11120EJ3V0DS00 PC1658G 11 ...

Page 12

NESAT (NEC Silicon Advanced Technology trademark of NEC Corporation. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may ...

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