HM628128ALFP-8 HITACHI, HM628128ALFP-8 Datasheet

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HM628128ALFP-8

Manufacturer Part Number
HM628128ALFP-8
Description
Manufacturer
HITACHI
Datasheet
The Hitachi HM628128A is a CMOS static RAM
organized 128 kword
density, higher performance and low power
consumption by employing 0.8 µm Hi-CMOS
process technology.
It offers low power standby power dissipation;
therefore, it is suitable for battery back-up systems.
The device, packaged in a 525-mil SOP (460-mil
body SOP) or a 600-mil plastic DIP, or a 8
mm TSOP with thickness of 1.2 mm, is available
for high density mounting. TSOP package is
suitable for cards, and reverse type TSOP is also
provided.
131,072-word 8-bit High Speed CMOS Static RAM
8 bit. It realizes higher
HM628128A Series
20
Features
• High speed
• Low power
• Single 5 V supply
• Completely static memory
• Equal access and cycle times
• Common data input and output
• Directly TTL compatible
• Capability of battery back up operation
No clock or timing strobe required
Three state output
All inputs and outputs
2 chip selection for battery back up
— Fast access time: 55/70/85/100 ns (max)
— Active: 75 mW (typ)
— Standby: 10 µW (typ)
ADE-XXX-XXX
January 1995
Rev. X

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HM628128ALFP-8 Summary of contents

Page 1

... HM628128A Series 131,072-word 8-bit High Speed CMOS Static RAM The Hitachi HM628128A is a CMOS static RAM organized 128 kword 8 bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. It offers low power standby power dissipation; therefore suitable for battery back-up systems. ...

Page 2

... HM628128ALFP– HM628128ALFP–10 100 ns HM628128ALFP– HM628128ALFP– HM628128ALFP– HM628128ALFP–10L 100 ns HM628128ALFP–5SL 55 ns HM628128ALFP–7SL 70 ns HM628128ALFP–8SL 85 ns HM628128ALFP–10SL 100 ns 2 Package Type No. 600-mil 32-pin HM628128ALT–5 plastic DIP HM628128ALT–7 (DP-32) HM628128ALT– ...

Page 3

Pin Arrangement HM628128ALP/ALFP Series A16 3 A14 4 A12 I/O0 14 I/ (Top View) Pin ...

Page 4

HM628128A Series Block Diagram (MSB) A13 A15 A6 A7 A12 A14 A16 A5 A4 (LSB) I/O0 I/O7 CS2 CS1 WE OE Function Table CS1 OE WE CS2 ...

Page 5

Absolute Maximum Ratings Parameter Supply voltage relative Voltage on any pin relative to V Power dissipation Operating temperature Storage temperature Storage temperature under bias Note: 1. With respect –3.0 V for pulse half-width ...

Page 6

HM628128A Series DC Characteristics ( +70°C, V Parameter Symbol Input leakage current | Output leakage current |I LO Operating power supply I CC current: DC Operating power supply I CC1 current (HM628128 A-7/8/10) I CC1 ...

Page 7

AC Characteristics ( +70°C, V Test Conditions • Input pulse levels: 0 2.4 V (HM628128A-7/8/10 (HM628128A-5) • Input rise and fall times • Input and output timing reference ...

Page 8

HM628128A Series *4 Read Timing Waveform Address CS1 CS2 OE High Impedance Dout Notes and t are defined as the time at which the outputs achieve the open circuit conditions and HZ OHZ are not referred to output ...

Page 9

Write Cycle Parameter Symbol Write cycle time t WC Chip selection end of write Address setup time t AS Address valid end of write Write pulse width t WP Write recovery time t WR ...

Page 10

HM628128A Series Write Timing Waveform (1) ( Address OE CS1 CS2 * Dout Din 10 Clock Address Valid OHZ High Impedance * ...

Page 11

Write Timing Waveform (2) ( Address CS1 CS2 Dout Din Notes write occurs during the overlap of a low CS1, a high CS2, and a low WE. A write begins at the latest transition among ...

Page 12

HM628128A Series data bus contention. ≥ min + WHZ Low V Data Retention Characteristics ( +70°C) CC Parameter Symbol V for data retention Data retention current I CCDR (L ...

Page 13

Notes µA max 40˚C (L-version µA max 40˚C (L-L-version µA max 40˚C (L-SL-version). 4. CS2 controls address buffer, WE ...

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