RF2103P RF Micro Devices, RF2103P Datasheet

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RF2103P

Manufacturer Part Number
RF2103P
Description
Manufacturer
RF Micro Devices
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF2103P
Manufacturer:
RF
Quantity:
20 000
Part Number:
RF2103PTR13
Manufacturer:
RFMD
Quantity:
20 000
Product Description
The RF2103P is a medium power linear amplifier IC. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final linear RF amplifier in
UHF radio transmitters operating between 450MHz and
1000MHz. It may also be used as a driver amplifier in
higher power applications. The device is self-contained
with the exception of the output matching network, power
supply feed line, and bypass capacitors, and it produces
an output power level of 750mW (CW). The device can
be used in 3 cell battery applications. The maximum CW
output at 3.6V is 175mW. The unit has a total gain of
31dB, depending upon the output matching network.
Optimum Technology Matching® Applied
Rev B1 010720
Typical Applicat ions
• Digital Communication Systems
• Spread-Spectrum Communication Systems
• Driver for Higher Power Linear Applications
PRE AMP PWR
Si BJT
Si Bi-CMOS
VCC1
VCC2
RF IN
GND
GND
PD
Funct ional Block Diagram
1
2
3
4
5
6
7
ü
GaAs HBT
SiGe HBT
PRE
AMP
CIRCUITS
BIAS
2
FPA
GaAs MESFET
Si CMOS
14
13
12
11
10
9
8
RF OUT
RF OUT
GND
GND
GND
RF OUT
RF OUT
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• Base Station Equipment
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• 450MHz to 1000MHz Operation
• Up to 750mW CW Output Power
• 31dB Small Signal Gain
• Single 2.7V to 7.5V Supply
• 47% Efficiency
• Digitally Controlled Power Down Mode
RF2103P
RF2103P PCBA
MEDIUM POWER LINEAR AMPLIFIER
0.347
0.339
Package St yle: SOIC-14
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
8° MAX
0.0500
0.0164
0° MIN
0.156
0.148
0.050
0.010
0.007
RF2103P
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
2-1
2

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RF2103P Summary of contents

Page 1

... Spread-Spectrum Communication Systems • Driver for Higher Power Linear Applications Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz ...

Page 2

... RF2103P Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage ( Supply Current Input RF Power 2 Output Load VSWR Operating Case Temperature Operating Ambient Temperature Storage Temperature Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Second Harmonic Third Harmonic Output Noise Power ...

Page 3

... RF OUT Same as pin 14 OUT Same as pin 14. 10 GND Same as pin 2. 11 GND Same as pin 2. 12 GND Same as pin OUT Same as pin 14. Rev B1 010720 Interface Schematic . It is not optimized for this function should be bypassed with a CC RF2103P 2 2-3 ...

Page 4

... RF2103P Pin Function Description 14 RF OUT Amplifier RF output. This is an unmatched collector output of the final amplifier transistor internally connected to pins and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these four pins ...

Page 5

... Operat ion P1-1 1 VCC 2 GND P1 2103400 Rev PRE FPA AMP BIAS CIRCUITS 0.01" x 0.2" RF2103P 50 Matching Network 14 50 strip RF OUT 6 3 330 pF 8 2-5 2 ...

Page 6

... RF2103P 2 2-6 Evaluation Board Layout 1.4” x 1.4” Rev B1 010720 ...

Page 7

... Efficiency and Icc vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz 75 Eff (+25°C) Icc (+25° Gain (+25°C) Gain (-40°C) Gain (+85° RF2103P 260 Eff (-40°C) Eff (+85°C) Icc (-40°C) Icc (+85°C) 210 160 110 Pout (dBm) 260 Eff (-40°C) Eff (+85° ...

Page 8

... RF2103P IM3, IM5, and IM2 vs. Pout Vcc=Vb=3.6 V, 915 MHz 0 IM3 IM5 -10 IM2 2 -20 -30 -40 -50 -60 -15 - Pout per Tone (dBm) IM3, IM5, and IM2 vs. Pout Vcc=Vb=4.8 V, 915 MHz 0 IM3 IM5 -10 IM2 -20 -30 -40 -50 -60 -15 - Pout per Tone (dBm) IM3, IM5, and IM2 vs ...

Page 9

... Vcc=4.8 V, Pin=0 dBm, 915 MHz 75 +25°C -40°C 60 +85° 4.0 5.0 0.0 1.0 Vcc=6.0 V, Pin=0 dBm, 915 MHz 75 +25°C -40°C 60 +85° 4.0 5.0 0.0 1.0 RF2103P Efficiency vs. Vb 2.0 3.0 4.0 5.0 Vb (Volts) Efficiency vs. Vb 2.0 3.0 4.0 5.0 Vb (Volts) Efficiency vs. Vb 2.0 3.0 4.0 5.0 Vb (Volts) 2-9 2 ...

Page 10

... RF2103P Psat vs. Vcc Vb=Vcc; Vb 5.0 V, 915 MHz 2.0 3.0 4.0 5.0 Vcc (Volts) Vb Required to Achieve Specific Pout (Vb<5.0 V, 915 MHz) 5 27dBm 24dBm 4 21dBm 18dBm 15dBm 2.0 3.0 4.0 5.0 Vcc (Volts) 2- 6.0 7.0 8.0 -25 -20 Two Tone Efficiency and Icc vs. Pout, 100 Eff (Vcc=Vb=3.6V) Eff (Vcc=Vb=4 ...

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