MMDF2P02ER2 ON Semiconductor, MMDF2P02ER2 Datasheet

MMDF2P02ER2

Manufacturer Part Number

MMDF2P02ER2

Description

Manufacturer

ON Semiconductor

Datasheet

1.MMDF2P02ER2.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMDF2P02ER2

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

MMDF2P02ER2

Quantity:

1 410

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMDF2P02ER2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 7
Download datasheet (94Kb)

MMDF2P02E

Power MOSFET

2 Amps, 25 Volts

P−Channel SO−8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOSt

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

April, 2006 − Rev. 8

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current − Continuous @ T

Drain Current

Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Thermal Resistance, Junction−to−Ambient

(Note 2)

Maximum Lead Temperature for Soldering

Purposes, 0.0625″ from case for 10 sec.

These miniature surface mount MOSFETs feature ultra low R

Ultra Low R

Logic Level Gate Drive − Can Be Driven by Logic ICs

Miniature SO−8 Surface Mount Package − Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, with Soft Recovery

Avalanche Energy Specified

Mounting Information for SO−8 Package Provided

Pb−Free Package is Available

one die operating, 10 sec. max.

= 7.0 Apk, L = 10 mH, R

DSS

= 20 Vdc, V

Specified at Elevated Temperatures

− Continuous @ T

− Single Pulse (t

DS(on)

Rating

= 10 Vdc, Peak

= 25°C

Provides Higher Efficiency and Extends Battery Life

= 25°C (Note

= 25°C unless otherwise noted) (Note 1)

= 25 W)

≤ 10 ms)

= 100°C

= 25°C

Symbol

, T

DSS

qJA

stg

−55 to 150

Value

± 20

62.5

245

260

2.5

1.7

2.0

mW/°C

°C/W

Unit

DS(on)

Vdc

Adc

Apk

°C

†For information on tape and reel specifications,

MMDF2P02ER2

MMDF2P02ER2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

Source−1

Source−2

2 AMPERES, 25 VOLTS

Gate−1

Gate−2

F2P02

ORDERING INFORMATION

DS(on)

http://onsemi.com

PIN ASSIGNMENT

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

SO−8, Dual

CASE 751

STYLE 11

(Pb−Free)

Package

P−Channel

Top View

SO−8

= 250 mW

Publication Order Number:

2500 Tape & Reel

MMDF2P02E/D

Drain−1

Drain−2

MARKING

DIAGRAM

Shipping

AYWW G

F2PO2

†

Related parts for MMDF2P02ER2

MMDF2P02ER2 Summary of contents

Page 1

... J stg 245 °C/W R 62.5 qJA °C T 260 L MMDF2P02ER2 MMDF2P02ER2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 2 AMPERES, 25 VOLTS R = 250 mW DS(on) P−Channel MARKING ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 4 4 3.7 V 3 0.4 0.8 1 DRAIN−TO−SOURCE VOLTAGE ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

25° d(off d(on GATE RESISTANCE (OHMS) G Figure 9. Resistive ...

Page 6

Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10s max. SINGLE PULSE T = 25° 100 ...

Page 7

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. E−FET and MiniMOS are trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

MMDF2P02ER2 datasheet
MMDF2P02ER2 data sheet
MMDF2P02ER2 pdf datasheet
MMDF2P02ER2 component
MMDF2P02ER2 part
MMDF2P02ER2 distributor
MMDF2P02ER2 RoHS
MMDF2P02ER2 datasheet download