W49F002UP70B Winbond, W49F002UP70B Datasheet

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W49F002UP70B

Manufacturer Part Number
W49F002UP70B
Description
256K*8 CMOS flash memory
Manufacturer
Winbond
Datasheet

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GENERAL DESCRIPTION
The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
not required. The unique cell architecture of the W49F002U results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
Fast Program operation:
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 70/90/120 nS
Endurance: 10K cycles (typ.)
Ten-year data retention
Hardware data protection
One 16K byte Boot Block with Lockout
protection
Two 8K byte Parameter Blocks
5-volt Read
5-volt Erase
5-volt Program
Byte-by-Byte programming: 35 S (typ.)
256K
- 1 -
8 CMOS FLASH MEMORY
Two Main Memory Blocks (96K, 128K) Bytes
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Automatic program and erase timing with
internal V
End of program or erase detection
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin DIP and 32-pin
TSOP and 32-pin-PLCC
Toggle bit
Data polling
PP
generation
Publication Release Date: April 2000
W49F002U
8 bits. The
Revision A2
PP
is

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W49F002UP70B Summary of contents

Page 1

GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V not required. The unique cell architecture of the W49F002U ...

Page 2

PIN CONFIGURATIONS 32 RESET A16 3 30 A15 4 29 A12 32-pin 8 DIP ...

Page 3

FUNCTIONAL DESCRIPTION Read Mode The read operation of the W49F002U is controlled by CE and OE, both of which have to be low for the host to obtain data from the outputs used for device selection. When CE ...

Page 4

Once the boot block lockout feature is activated, the whole chip erase function will erase the two main memory blocks and the two parameter blocks but not the boot ...

Page 5

Toggle Bit (DQ )- Write Status Detection 6 In addition to data polling, the W49F002U provides another method for determining the end of a program cycle. During the internal program or erase cycle, any consecutive attempts to read DQ produce ...

Page 6

TABLE OF COMMAND DEFINITION COMMAND NO. OF CYCLE Cycles Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data DESCRIPTION Read Chip Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 Sector ...

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Command Codes for Byte Program COMMAND SEQUENCE 0 Write 1 Write 2 Write 3 Write Byte Program Flow Chart Notes for software program code: Data Format: DQ7 DQ0 (Hex) Address Format: A14 A0 (Hex) ADDRESS 5555H 2AAAH 5555H Programmed-address Byte ...

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Command Codes for Chip Erase BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write Chip Erase Acquisition Flow Notes for chip erase: Data Format: DQ7 DQ0 (Hex) Address Format: A14 A0 (Hex) ADDRESS 5555H 2AAAH ...

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Command Codes for Sector Erase BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write Sector Erase Acquisition Flow Notes for chip erase: Data Format: DQ7 DQ0 (Hex) Address Format: A14 A0 (Hex For ...

Page 10

Command Codes for Product Identification and Boot Block Lockout Detection BYTE SOFTWARE PRODUCT SEQUENCE IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY ADDRESS 1 Write 5555 2 Write 2AAA 3 Write 5555 Pause 10 S Software Product Identification and Boot Block Lockout Detection ...

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Command Codes for Boot Block Lockout Enable BYTE SEQUENCE 0 Write 1 Write 2 Write 3 Write 4 Write 5 Write Boot Block Lockout Enable Acquisition Flow Notes for boot block lockout enable: Data Format: DQ7 DQ0 (Hex) Address Format: ...

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DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Power Supply Voltage to V Potential ss Operating Temperature Storage Temperature D.C. Voltage on Any Pin to Ground Potential except OE Transient Voltage (< Any Pin to Ground Potential Voltage on ...

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Power-up Timing PARAMETER Power-up to Read Operation Power-up to Write Operation CAPACITANCE (V = 5.0V MHz PARAMETER SYMBOL I/O Pin Capacitance Input Capacitance AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse ...

Page 14

AC Characteristics, continued Read Cycle Timing Parameters ( PARAMETER Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE ...

Page 15

AC Characteristics, continued Data Polling and Toggle Bit Timing Parameters PARAMETER OE to Data Polling Output Delay Data Polling Output Delay OE to Toggle Bit Output Delay CE to Toggle Bit Output Delay TIMING WAVEFORMS Read Cycle ...

Page 16

Timing Waveforms, continued Controlled Command Write Cycle Timing Diagram WE Address A17 DQ7-0 Controlled Command Write Cycle Timing Diagram CE Address A17 DQ7 OES ...

Page 17

Timing Waveforms, continued Program Cycle Timing Diagram Address A17-0 5555 DQ7 Byte 0 Polling Timing Diagram DATA Address A17 DQ7 Byte Program Cycle 2AAA 5555 Address Data-In T ...

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Timing Waveforms, continued Toggle Bit Timing Diagram Address A17 DQ6 Boot Block Lockout Enable Timing Diagram Address A17-0 5555 DQ7 SB0 T OEH Six byte code ...

Page 19

Timing Waveforms, continued Chip Erase Timing Diagram Address A17-0 5555 DQ7 SB0 Sector Erase Timing Diagram Address A17-0 5555 DQ7 SB0 SA = Sector Address Six-byte code for ...

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... W49F002U-12B 120 W49F002UT70B 70 W49F002UT90B 90 W49F002UT12B 120 W49F002UP70B 70 W49F002UP90B 90 W49F002UP12B 120 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...

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PACKAGE DIMENSIONS 32-pin P-DIP 32-pin PLCC Seating Plane ...

Page 22

Package Dimensions, continued 32-pin TSOP 0.10(0.004 Dimension in Inches Symbol Min. Nom. Max 0.047 __ A 0.002 0.006 1 A 0.037 0.039 0.041 2 b 0.007 0.008 ...

Page 23

... Add the 120 nS bin Change Tbp(typ.) from Change Tec(max.) from 1 Sec to 0.2 Sec Winbond Electronics (H.K.) Ltd. Winbond Electronics North America Corp. Winbond Memory Lab. Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Winbond Microelectronics Corp. Kowloon, Hong Kong Winbond Systems Lab ...

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