MX29LV800TTC-70 Macronix International Co., MX29LV800TTC-70 Datasheet
MX29LV800TTC-70
Available stocks
Related parts for MX29LV800TTC-70
MX29LV800TTC-70 Summary of contents
Page 1
FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 70/90ns • Low ...
Page 2
PIN CONFIGURATIONS 44 SOP(500 mil) 44 RESET RY/ A18 A17 A10 A11 A12 A13 A14 A2 ...
Page 3
BLOCK STRUCTURE Table 1: MX29LV800T SECTOR ARCHITECTURE Sector Sector Size Byte Mode Word Mode SA0 64Kbytes 32Kwords SA1 64Kbytes 32Kwords SA2 64Kbytes 32Kwords SA3 64Kbytes 32Kwords SA4 64Kbytes 32Kwords SA5 64Kbytes 32Kwords SA6 64Kbytes 32Kwords SA7 64Kbytes 32Kwords SA8 64Kbytes ...
Page 4
Table 2: MX29LV800B SECTOR ARCHITECTURE Sector Sector Size Byte Mode Word Mode SA0 16Kbytes 8Kwords SA1 8Kbytes 4Kwords SA2 8Kbytes 4Kwords SA3 32Kbytes 16Kwords SA4 64Kbytes 32Kwords SA5 64Kbytes 32Kwords SA6 64Kbytes 32Kwords SA7 64Kbytes 32Kwords SA8 64Kbytes 32Kwords SA9 ...
Page 5
BLOCK DIAGRAM CONTROL CE OE INPUT WE LOGIC RESET ADDRESS LATCH A0-A18 AND BUFFER Q0-Q15/A-1 P/N:PM0709 MX29LV800T/B PROGRAM/ERASE HIGH VOLTAGE STATE MX29LV800T/B FLASH ARRAY ARRAY SOURCE HV Y-PASS GATE PGM SENSE DATA AMPLIFIER HV DATA LATCH PROGRAM DATA LATCH I/O ...
Page 6
AUTOMATIC PROGRAMMING The MX29LV800T/B is byte programmable using the Au- tomatic Programming algorithm. The Automatic Pro- gramming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming ...
Page 7
VID, as shown in table4. To verify whether or not sector being protected, the sec- tor address must appear on the appropriate highest or- der address bit (see Table 1 and Table ...
Page 8
TABLE 4. MX29LV800T/B COMMAND DEFINITIONS First Bus Command Bus Cycle Cycle Addr Reset 1 XXXH F0H Read 1 RA Read Silicon ID Word 4 555H AAH 2AAH Byte 4 AAAH AAH 555H Sector Protect Word 4 555H AAH 2AAH Verify ...
Page 9
COMMAND DEFINITIONS Device operations are selected by writing specific ad- dress and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table ...
Page 10
REQUIREMENTS FOR READING ARRAY DATA To read array data from the outputs, the system must drive the CE and OE pins to VIL the power control and selects the device the output control and gates array ...
Page 11
Flash memory. If RESET is asserted during a program or erase operation, the RY/BY pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The sysytem can thus ...
Page 12
TABLE 6. SILICON ID CODE Pins A0 Manufacture code Word VIL Byte VIL Device code Word VIH for MX29LV800T Byte VIH Device code Word VIH for MX29LV800B Byte VIH Sector Protection Word X Verification Byte X READING ARRAY DATA The ...
Page 13
SECTOR ERASE COMMANDS The Automatic Sector Erase does not require the de- vice to be entirely pre-programmed prior to executing the Automatic Sector Erase Set-up command and Au- tomatic Sector Erase command. Upon executing the Automatic Sector Erase command, the ...
Page 14
Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operat ion. The Byte Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed ...
Page 15
During an Automatic Program or Erase algorithm opera- tion, successive read cycles to any address cause Q6 to toggle. The system may use either con- trol the read cycles. When the operation is complete, Q6 stops ...
Page 16
If this time-out condition occurs during sector erase op- eration, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still func- tional and may be used for the program or erase ...
Page 17
Q3 Sector Erase Timer After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector ...
Page 18
CHIP UNPROTECT The MX29LV800T/B also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code recommended to protect all sectors before activating chip unprotect mode. ...
Page 19
ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65 Ambient Temperature with Power Applied .... ...
Page 20
CAPACITANCE 1.0 MHz SYMBOL PARAMETER CIN1 Input Capacitance CIN2 Control Pin Capacitance COUT Output Capacitance READ OPERATION Table 8. DC CHARACTERISTICS Symbol PARAMETER ILI Input Leakage Current ILIT A9 Input Leakage Current ILO ...
Page 21
AC CHARACTERISTICS TA = -40 Table 9. READ OPERATIONS SYMBOL PARAMETER tRC Read Cycle Time (Note 1) tACC Address to Output Delay tCE CE to Output Delay tOE OE to Output Delay tDF OE High to Output Float (Note1) tOEH ...
Page 22
SWITCHING TEST CIRCUITS DEVICE UNDER TEST SWITCHING TEST WAVEFORMS 3. TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0". Input pulse rise and fall times are < 5ns. P/N:PM0709 MX29LV800T/B CL ...
Page 23
Figure 1. READ TIMING WAVEFORMS VIH Addresses VIL VIH CE VIL VIH WE VIL VIH OE VIL VOH HIGH Z Outputs VOL VIH RESET VIL P/N:PM0709 MX29LV800T/B tRC ADD Valid tACC tCE tOE tOEH tACC tOH DATA Valid 23 tDF ...
Page 24
AC CHARACTERISTICS TA = -40 Table 10. Erase/Program Operations SYMBOL PARAMETER tWC Write Cycle Time (Note 1) tAS Address Setup Time tAH Address Hold Time tDS Data Setup Time tDH Data Hold Time tOES Output Enable Setup Time tGHWL Read ...
Page 25
AC CHARACTERISTICS TA = -40 Table 11. Alternate CE Controlled Erase/Program Operations SYMBOL PARAMETER tWC Write Cycle Time (Note 1) tAS Address Setup Time tAH Address Hold Time tDS Data Setup Time tDH Data Hold Time tOES Output Enable Setup ...
Page 26
Figure 2. COMMAND WRITE TIMING WAVEFORM VCC 3V VIH Addresses VIL tAS VIH WE VIL tOES CE VIH VIL tCS OE VIH VIL VIH Data VIL P/N:PM0709 MX29LV800T/B ADD Valid tAH tWP tCWC tCH tDS tDH DIN 26 tWPH REV. ...
Page 27
AUTOMATIC PROGRAMMING TIMING WAVEFORM One byte data is programmed. Verify in fast algorithm and additional verification by external control are not re- quired because these operations are executed automati- cally by internal control circuit. Programming comple- tion can be verified ...
Page 28
Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART Increment Address P/N:PM0709 MX29LV800T/B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Data Poll from system No Verify Word Ok ? YES No ...
Page 29
Figure 5. CE CONTROLLED PROGRAM TIMING WAVEFORM 555 for program 2AA for erase Address tWC tWH WE tGHEL OE CE tWS Data tRH RESET RY/BY NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device. 2.Figure indicates ...
Page 30
AUTOMATIC CHIP ERASE TIMING WAVEFORM All data in chip are erased. External erase verification is not required because data is verified automatically by internal control circuit. Erasure completion can be veri- fied by DATA polling and toggle bit checking after ...
Page 31
Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART P/N:PM0709 MX29LV800T/B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H ...
Page 32
AUTOMATIC SECTOR ERASE TIMING WAVEFORM Sector indicated by A12 to A18 are erased. External erase verify is not required because data are verified automatically by internal control circuit. Erasure comple- tion can be verified by DATA polling and toggle bit ...
Page 33
Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART P/N:PM0709 MX29LV800T/B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address ...
Page 34
Figure 10. ERASE SUSPEND/ERASE RESUME FLOWCHART P/N:PM0709 MX29LV800T/B START Write Data B0H ERASE SUSPEND NO Toggle Bit checking Q6 not toggled YES Read Array or Program Reading or NO Programming End YES Write Data 30H ERASE RESUME Continue Erase Another ...
Page 35
Figure 11. IN-SYSTEM SECTOR PROTECT/UNPROTECT TIMING WAVEFORM (RESET Control) VID VIH RESET SA, A6 A1, A0 Sector Protect or Sector Unprotect Data 60h 1us Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0. ...
Page 36
Figure 12. SECTOR PROTECT TIMING WAVEFORM(A9, OE Control 12V 3V A9 tVLHT 12V 3V OE tVLHT WE CE Data A18-A12 P/N:PM0709 MX29LV800T/B tWPP 1 tOESP Sector Address 36 Verify tVLHT 01H F0H tOE REV. 1.3, JAN. 24, 2002 ...
Page 37
Figure 13. SECTOR PROTECTION ALGORITHM (A9, OE Control) No PLSCNT=32? Yes Device Failed P/N:PM0709 MX29LV800T/B START Set Up Sector Addr PLSCNT=1 OE=VID,A9=VID,CE=VIL A6=VIL Activate WE Pulse Time Out 150us Set WE=VIH, CE=OE=VIL A9 should remain VID Read from Sector Addr=SA, ...
Page 38
Figure 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID Increment PLSCNT No PLSCNT=25? Yes Device failed P/N:PM0709 MX29LV800T/B START PLSCNT=1 RESET=VID Wait 1us No Temporary Sector First Write Unprotect Mode Cycle=60H Yes Set up sector address Write 60H to sector address ...
Page 39
Figure 15. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID Increment PLSCNT No PLSCNT=1000? Yes Device failed P/N:PM0709 MX29LV800T/B START PLSCNT=1 RESET=VID Wait 1us No Temporary Sector First Write Unprotect Mode Cycle=60H ? Yes No All sector Protect all sectors protected? Yes ...
Page 40
Figure 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE Control) A1 12V Vcc 3V A9 tVLHT A6 12V Vcc 3V OE tVLHT WE CE Data A18-A12 Notes: tVLHT (Voltage transition time)=4us min. tWPP1 (Write pulse width for sector protect)=100ns min, ...
Page 41
Figure 17. CHIP UNPROTECTION ALGORITHM(A9, OE Control) Increment Sector Addr * It is recommended before unprotect whole chip, all sectors should be protected in advance. P/N:PM0709 MX29LV800T/B START Protect All Sectors PLSCNT=1 Set OE=A9=VID CE=VIL,A6=1 Activate WE Pulse Time Out ...
Page 42
WRITE OPERATION STATUS Figure 18. DATA POLLING ALGORITHM NOTE : 1.VA=Valid address for programming 2.Q7 should be re-checked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM0709 MX29LV800T/B Start Read Q7~Q0 Add.=VA(1) Yes Q7 = Data ? No No ...
Page 43
Figure 19. TOGGLE BIT ALOGRITHM NO Program/Erase Operation Not Complete,Write Note:1.Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 change to "1". P/N:PM0709 MX29LV800T/B Start Read ...
Page 44
Figure 20. Data Polling Timings (During Automatic Algorithms) tRC Address VA tACC tCE CE tCH tOE OE tOEH WE Q7 Q0-Q6 tBUSY RY/BY NOTES: VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and ...
Page 45
Figure 21. Toggle Bit Timings (During Automatic Algorithms) tRC VA Address tACC tCE CE tCH tOE OE tOEH WE High Z Q6/Q2 tBUSY RY/BY NOTES: VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, ...
Page 46
Table 12. AC CHARACTERISTICS Parameter Std Description tREADY1 RESET PIN Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP RESET Pulse Width (During Automatic ...
Page 47
AC CHARACTERISTICS WORD/BYTE CONFIGURATION (BYTE) Parameter Description JEDEC Std tELFL/tELFH CE to BYTE Switching Low or High tFLQZ BYTE Switching Low to Output HIGH Z tFHQV BYTE Switching High to Output Active Figure 23. BYTE TIMING WAVEFORM FOR READ OPERATIONS ...
Page 48
Figure 24. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from word mode to byte mode BYTE Q0~Q14 Q15/A-1 Figure 25. BYTE TIMING WAVEFORM FOR PROGRAM OPERATIONS CE WE BYTE P/N:PM0709 MX29LV800T/B tELFH DOUT (Q0-Q14) DOUT VA (Q15) ...
Page 49
Table 13. TEMPORARY SECTOR UNPROTECT Parameter Std. Description tVIDR VID Rise and Fall Time (See Note) tRSP RESET Setup Time for Temporary Sector Unprotect Note: Not 100% tested FIgure 26. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM 12V RESET 0 or Vcc ...
Page 50
Figure 28. TEMPORARY SECTOR UNPROTECT ALGORITHM Temporary Sector Unprotect Completed(Note 2) Note : 1. All protected sectors are temporary unprotected. P/N:PM0709 MX29LV800T/B Start RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH VID=11.5V~12.5V 2. ...
Page 51
Figure 29. ID CODE READ TIMING WAVEFORM VCC 3V VID ADD VIH A9 VIL VIH ADD A0 VIL tACC VIH A1 VIL ADD VIH A2-A8 A10-A18 VIL CE VIH VIL VIH WE VIL VIH OE VIL VIH DATA Q0-Q15 VIL ...
Page 52
ERASE AND PROGRAMMING PERFORMANCE(1) PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Mode Word Mode Erase/Program Cycles Note: 1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured at ...
Page 53
... ORDERING INFORMATION PLASTIC PACKAGE PART NO. ACCESS TIME (ns) MX29LV800TMC-70 70 MX29LV800BMC-70 70 MX29LV800TMC-90 90 MX29LV800BMC-90 90 MX29LV800TTC-70 70 MX29LV800TTC-70R 70 MX29LV800BTC-70 70 MX29LV800BTC-70R 70 MX29LV800TTC-90 90 MX29LV800BTC-90 90 MX29LV800TXBC-70 70 MX29LV800TXBC-90 90 MX29LV800BXBC-70 70 MX29LV800BXBC-90 90 MX29LV800TXEC-70 70 MX29LV800TXEC-90 90 MX29LV800BXEC-70 70 MX29LV800BXEC-90 90 MX29LV800TMI-70 70 MX29LV800BMI-70 70 MX29LV800TMI-90 90 MX29LV800BMI-90 90 MX29LV800TTI-70 70 MX29LV800TTI-70R 70 MX29LV800BTI-70 70 MX29LV800BTI-70R 70 P/N:PM0709 MX29LV800T/B OPERATING CURRENT STANDBY CURRENT MAX.(mA) ...
Page 54
PART NO. ACCESS TIME (ns) MX29LV800TTI-90 90 MX29LV800BTI-90 90 MX29LV800TXBI-70 70 MX29LV800TXBI-90 90 MX29LV800BXBI-70 70 MX29LV800BXBI-90 90 MX29LV800TXEI-70 70 MX29LV800TXEI-90 90 MX29LV800BXEI-70 70 MX29LV800BXEI-90 90 P/N:PM0709 MX29LV800T/B OPERATING CURRENT STANDBY CURRENT MAX.(mA ...
Page 55
PACKAGE INFORMATION 48-PIN PLASTIC TSOP P/N:PM0709 MX29LV800T/B 55 REV. 1.3, JAN. 24, 2002 ...
Page 56
PLASTIC SOP P/N:PM0709 MX29LV800T/B 56 REV. 1.3, JAN. 24, 2002 ...
Page 57
CSP (for MX29LV800TXBC/TXBI/BXBC/BXBI) P/N:PM0709 MX29LV800T/B 57 REV. 1.3, JAN. 24, 2002 ...
Page 58
CSP (for MX29LV800TXEC/TXEI/BXEC/BXEI) P/N:PM0709 MX29LV800T/B 58 REV. 1.3, JAN. 24, 2002 ...
Page 59
REVISION HISTORY Revision No. Description 1.0 Change heading as "PRELIMINARY" Correct mis-typing Changed tBUSY spec from 90us to 90ns 1.1 Correct mis-typing tBUSY timing was changed from 90ns min. to 90ns max. Add protection waveform and flowchart(A9, OE control) Add ...
Page 60
... TEL:+65-348-8385 FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 ACRONIX MERICA, NC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com MX29LV800T O., TD. MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. ...