HYB5117405BJ-60 Infineon Technologies AG, HYB5117405BJ-60 Datasheet

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HYB5117405BJ-60

Manufacturer Part Number
HYB5117405BJ-60
Description
4M x 4bit EDO-DRAM
Manufacturer
Infineon Technologies AG
Datasheet
• 4 194 304 words by 4-bit organization
• 0 to 70 C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
• Power dissipation, refresh & addressing:
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package:
4M
2k & 4k Refresh
(Hyper Page Mode - EDO)
Advanced Information
Semiconductor Group
t
t
t
t
t
Power supply
Addressing
Refresh
L-version
Active
TTL Standby
CMOS Standby
CMOS Standby
(L-version)
test mode and Self Refresh (on L-versions only)
RAC
CAC
AA
RC
HPC
4-Bit Dynamic RAM
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO) cycle time
HYB 5116405 HYB 3116405 HYB 5117405 HYB 3117405
275
-50
5 V
12/10
P-SOJ-26/24-1
P-TSOPII-26/24-1 300 mil
4096 cycles / 128 ms
4096 cylces / 64 ms
5.5
11
10%
220
-60
3.3 V
180
-50
12/10
0.72
7.2
3.6
300 mil
0.3 V
144
-60
1
-50
50
13
25
84
20
440
-50
5 V
104 ns
-60
60
15
30
25
11/11
2048 cycles / 32 ms
5.5
11
HYB 3116405BJ/BT(L)-50/-60
10%
ns
ns
ns
ns
385
HYB 3117405BJ/BT-50/-60
-60
HYB 5116405BJ-50/-60
HYB 5117405BJ-50/-60
3.3 V
288
-50
11/11
7.2
3.6
0.3 V
252
-60
mW
mW
mW
mW
1998-10-01

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HYB5117405BJ-60 Summary of contents

Page 1

Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) Advanced Information • 4 194 304 words by 4-bit organization • operating temperature • Hyper Page Mode - EDO - operation • Performance: ...

Page 2

The HYB 5(3)116(7)405 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit ...

Page 3

Pin Names Row Address Inputs Column Address Inputs Row Address Strobe Column Address Strobe Output Enable Data Input/Output Read/Write Input Power Supply Ground (0 V) Not Connected Pin Configuration (top view) Semiconductor Group HYB 3116(7)405BJ/BT(L)-50/-60 HYB 5(3)16405 HYB 5(3)17405 4k-Refresh ...

Page 4

WE CAS No.2 Clock Generator Column 10 Address A0 Buffers (10 Refresh A3 Controller Refresh A7 Counter (12 A10 Row A11 12 Address Buffers (12) No.1 Clock RAS Generator Block Diagram ...

Page 5

WE CAS No.2 Clock Generator Column 11 Address Buffers (11 Refresh A3 Controller Refresh Counter (11 A10 Row 11 Address Buffers (11) No.1 Clock RAS Generator Block Diagram for HYB ...

Page 6

Absolute Maximum Ratings Operating temperature range ........................................................................................... ˚C Storage temperature range........................................................................................ – 150 ˚C Input/output voltage (5 V versions) ................................................... – 0.5 to min ( Input/output voltage (3.3 V versions) ................................................ – 0.5 to min ...

Page 7

DC Characteristics (cont’ Parameter Common Parameters Input leakage current 0.3 V, all other pins = Output leakage ...

Page 8

Capacitance MHz A Parameter Input capacitance (A0 to A11) Input capacitance (RAS, CAS, WE, OE) I/O capacitance (I/O1 to I/O4 Characteristics ...

Page 9

AC Characteristics (cont’ Parameter Access time from column address OE access time Column address to RAS lead time Read command setup time Read command hold ...

Page 10

AC Characteristics (cont’ Parameter Hyper Page Mode (EDO) Cycle Hyper page mode (EDO) cycle time CAS precharge time Access time from CAS precharge Output data ...

Page 11

AC Characteristics (cont’ Parameter Test Mode Write command setup time Write command hold time CAS hold time RAS hold time in test mode Semiconductor Group ...

Page 12

Notes 1. All voltages are referenced and depend on cycle rate. CC1 CC3 CC4 CC6 and depend on output loading. Specified values are obtained with the output open. CC1 ...

Page 13

V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs ...

Page 14

V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...

Page 15

V IH RAS CAS ASR V IH Address Row RAH I/O (Inputs I/O (Outputs) ...

Page 16

V IH RAS CAS ASR V IH Address Row I/O (Inputs I/O (Outputs) V ...

Page 17

RCD V IH RAS CRP V IH CAS RAH t ASR V IH Address Row RAD I/O (Output) ...

Page 18

V IH RAS CRP V IH CAS RAH t ASR V IH Row Address Address RAD t WCS ...

Page 19

V IH RAS CSH t RCD V IH CAS RAD t t RAH t t ASR ASC V IH Address Row Column RWD t RCS ...

Page 20

V IH RAS CAS ASR V IH Address I/O (Outputs "H" or "L" RAS-only Refresh Cycle Semiconductor Group HYB 3116(7)405BJ/BT(L)-50/- RAS t RAH Row ...

Page 21

RAS RPC CAS ODD V IH I/O (Inputs CDD t OEZ V OH ...

Page 22

V IH RAS CAS RAD t ASC t RAH t ASR V IH Address Row RCS DZC V IH ...

Page 23

V IH RAS RCD V IH CAS RAD t ASC t RAH t ASR V IH Address Row WCS I/O (Input ...

Page 24

RAS RPC CAS WRP ODD V IH I/O (Inputs CDD t OEZ ...

Page 25

Read Cycle V IH RAS CSR V IH CAS Address WRP I/O (Inputs I/O ...

Page 26

V IH RAS RPC CAS Address ODD I/O (Inputs OEZ ...

Page 27

Package Outlines Plastic Package P-SOJ-26/24-1 (SMD) (300mil) (Plastic small outline J-leaded) 30˚ 1.27 0.51 -0 17.27 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side Sorts of Packing Package outlines for tubes, ...

Page 28

Plastic Package P-TSOPII-26/24-1 (400 mil) (SMD) (Plastic Thin Small Outline Package (Type II)) 1.27 +0.12 0.4 -0.1 26 2119 17.14 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max per side Sorts of ...

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