BS616LV1010EC-70 Brilliance Semiconductor, Inc., BS616LV1010EC-70 Datasheet

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BS616LV1010EC-70

Manufacturer Part Number
BS616LV1010EC-70
Description
Manufacturer
Brilliance Semiconductor, Inc.
Datasheet
n FEATURES
Ÿ Wide V
Ÿ Very low power consumption :
Ÿ High speed access time :
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.5V
n POWER CONSUMPTION
n PIN CONFIGURATIONS
R0201-BS616LV1010
Brilliance Semiconductor, Inc.
V
V
-55
-70
BS616LV1010DC
BS616LV1010AC
BS616LV1010EC
BS616LV1010AI
BS616LV1010EI
CC
CC
PRODUCT
= 3.0V
= 5.0V
FAMILY
CC
operation voltage : 2.4V ~ 5.5V
G
A
B
C
D
E
F
H
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
A15
A14
A13
A12
WE
NC
CE
A4
A3
A2
A1
A0
VCC
VSS
D14
D15
NC
Operation current : 25mA (Max.) at 55ns
Standby current :
Operation current : 45mA (Max.) at 55ns
Standby current :
55ns(Max.) at V
70ns(Max.) at V
LB
D8
D9
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TEMPERATURE
D10
D11
D12
D13
OE
NC
UB
A8
2
48-ball BGA top view
-40
+0
BS616LV1010EC
BS616LV1010EI
OPERATING
Commercial
O
Industrial
O
A14
A12
C to +70
NC
NC
A0
A3
A5
A9
C to +85
3
Pb-Free and Green package materials are compliant to RoHS
A15
A13
A10
NC
Very Low Power CMOS SRAM
64K X 16 bit
A1
A4
A6
A7
4
CC
CC
=2.7~5.5V
=2.4~5.5V
O
O
C
C
WE
A11
0.02uA (Typ.) at 25
0.4uA (Typ.) at 25
CE
D1
D3
D4
D5
A2
5
2mA (Max.) at 1MHz
5mA (Max.) at 1MHz
VCC
VSS
V
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
D0
D2
D6
D7
NC
6
3.0uA
5.0uA
CC
=5.0V
STANDBY
(I
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
CCSB1
reserves the right to change products and specifications without notice.
, Max)
V
0.5uA
1.5uA
CC
=3.0V
O
O
C
C
1MHz
4mA
5mA
1
POWER DISSIPATION
n DESCRIPTION
The BS616LV1010 is a high performance, very low power CMOS
Static Random Access Memory organized as 65,536 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.02uA at 3.0V/25
2.7V/85
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV1010 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1010 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
n BLOCK DIAGRAM
V
10MHz
24mA
25mA
CC
DQ15
DQ0
A13
A15
A14
A12
=5.0V
WE
OE
V
V
CE
UB
A8
A7
A6
A5
A4
LB
.
.
.
.
.
.
CC
SS
O
C.
.
.
.
.
.
.
44mA
45mA
Address
Buffer
f
Input
Max.
Operating
Control
(I
16
16
CC
, Max)
9
1.5mA
1MHz
2mA
Output
O
Buffer
Buffer
Input
Data
Data
C and maximum access time of 55ns at
Decoder
Row
V
10MHz
14mA
15mA
CC
BS616LV1010
16
=3.0V
16
512
A11
24mA
25mA
f
Max.
Address Input Buffer
A9
Column Decoder
Memory Array
A3
Write Driver
512 x 2048
Column I/O
Sense Amp
Revision
May.
DICE
BGA-48-0608
TSOP II-44
BGA-48-0608
TSOP II-44
A2
PKG TYPE
2048
128
7
A1
A0
2006
A10
2.6

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BS616LV1010EC-70 Summary of contents

Page 1

... +70 C BS616LV1010EC BS616LV1010AI Industrial +85 C BS616LV1010EI n PIN CONFIGURATIONS DQ0 7 DQ1 8 DQ2 9 DQ3 10 BS616LV1010EC VCC 11 VSS 12 BS616LV1010EI DQ4 13 DQ5 14 DQ6 15 DQ7 A15 18 A14 19 A13 20 A12 ...

Page 2

PIN DESCRIPTIONS Name A0-A15 Address Input CE Chip Enable Input WE Write Enable Input OE Output Enable Input LB and UB Data Byte Control Input DQ0-DQ15 Data Input/Output Ports TRUTH TABLE MODE CE H ...

Page 3

ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Terminal Voltage with V TERM Respect to GND Temperature Under T BIAS Bias T Storage Temperature STG P Power Dissipation Output Current OUT 1. Stresses greater than those listed under ABSOLUTE ...

Page 4

DATA RETENTION CHARACTERISTICS (T SYMBOL PARAMETER V V for Data Retention DR CC (3) I Data Retention Current CCDR Chip Deselect to Data t CDR Retention Time t Operation Recovery Time =1.5V, T =25 C ...

Page 5

AC ELECTRICAL CHARACTERISTICS (T READ CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Read Cycle Time AVAX Address Access Time AVQX Chip Select Access Time ELQV ACS t t Data Byte Control Access ...

Page 6

READ CYCLE OUT (1, 4) READ CYCLE 3 ADDRESS OUT NOTES high in read Cycle. 2. Device is continuously selected when Address ...

Page 7

AC ELECTRICAL CHARACTERISTICS (T WRITE CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Write Cycle Time AVAX Address Set up Time AVWL Address Valid to End of Write AVWH Chip ...

Page 8

WRITE CYCLE 2 ADDRESS CE LB OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. ...

Page 9

ORDERING INFORMATION BS616LV1010 Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which ...

Page 10

PACKAGE DIMENSIONS (continued) VIEW A 48 mini-BGA (6 x 8mm) R0201-BS616LV1010 D1 10 BS616LV1010 NOTES : 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. ...

Page 11

Revision History Revision No. History 2.5 Add Icc1 characteristic parameter 2.6 Change I-grade operation temperature range - from –25 O R0201-BS616LV1010 C to – BS616LV1010 Draft Date Remark Jan. 13, 2006 May. 25, 2006 Revision 2.6 ...

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