IRF7104 International Rectifier Corp., IRF7104 Datasheet

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IRF7104

Manufacturer Part Number
IRF7104
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications.
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
I
I
I
P
V
dv/dt
T
D
D
DM
J,
R
D
GS
@ T
@ T
T
@T
Adavanced Process Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
JA
STG
A
A
C
= 25°C
= 70°C
= 25°C
With these improvements, multiple
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
Top View
Min.
–––
HEXFET
8
6
5
7
-55 to + 150
Max.
0.016
± 12
D 1
-2.3
-1.8
-3.0
D 1
D 2
D 2
-10
2.0
Typ.
S O -8
–––
®
R
IRF7104
Power MOSFET
DS(on)
V
I
DSS
D
PD - 9.1096B
= -2.3A
Max.
62.5
= 0.250
= -20V
Units
Units
°C/W
W/°C
V/nS
°C
W
A
V
8/25/97

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IRF7104 Summary of contents

Page 1

... Parameter R Maximum Junction-to-Ambient JA HEXFET Top View @ 10V GS @ 10V GS - 150 Min. ––– 9.1096B IRF7104 ® Power MOSFET -20V DSS 0.250 D 2 DS(on -2. Max. Units -2.3 A -1.8 -10 2.0 W 0.016 W/° ...

Page 2

... IRF7104 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Drain-to-Source Voltage ( Fig 1. Typical Output Characteristics -V , Gate-to-Source Voltage ( Fig 3. Typical Transfer Characteristics IRF7104 -V , Drain-to-Source Voltage ( Fig 2. Typical Output Characteristics T , Junction Temperature ( ° Fig 4. Normalized On-Resistance Vs. Temperature ...

Page 4

... IRF7104 -V , Drain-to-Source Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -V , Source-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage SEE FIGURE Total Gate Charge ( Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -V , Drain-to-Source Voltage ( Fig 8. Maximum Safe Operating Area ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V GS 10% 90 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7104 D.U.T. G -10V µ d(on) r d(off) ...

Page 6

... IRF7104 Q G -10V Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA I G Current Sampling Resistors Fig 12b. Gate Charge Test Circuit - ...

Page 7

... Fig 13. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF7104 + *** V =10V ...

Page 8

... IRF7104 Package Outline SO8 Outline 0.25 (.010 0.25 (.010 ...

Page 9

... GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7104 . . ...

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