IRF6631TR1 International Rectifier Corp., IRF6631TR1 Datasheet

IRF6631TR1

Manufacturer Part Number

IRF6631TR1

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF6631TR1.pdf (10 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6631TR1PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (245Kb)

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Description

The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and

gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

RoHS compliant containing no lead or bromide

Low Profile (<0.6 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Control FET applications

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 25°C

T J = 125°C

Ãg

Parameter

I D = 13A

@ 10V

„

…

†

30V max ±20V max 6.0mΩ@ 10V 8.3mΩ@ 4.5V

12nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

DSS

measured with thermocouple mounted to top (Drain) of part.

12.0

10.0

8.0

6.0

4.0

2.0

0.0

4.4nC

= 25°C, L = 0.24mH, R

I D = 10A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

1.1nC

gs2

V DS = 24V

V DS = 15V

Max.

100

±20

DS(on)

10nC

= 25Ω, I

IRF6631

packaging to achieve the

DirectFET™ ISOMETRIC

7.3nC

= 10A.

oss

DS(on)

Units

1.8V

gs(th)

02/09/06

Related parts for IRF6631TR1

IRF6631TR1 Summary of contents

Page 1

RoHS compliant containing no lead or bromide l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J Storage Temperature Range ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 10V ≤ 60µs PULSE WIDTH 100 ...

Page 5

150°C 100 25° -40° 0.3 0.4 0.5 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 8

DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC MAX ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6631). For 1000 parts on 7" reel, order IRF6631TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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