IRF6631PBF International Rectifier Corp., IRF6631PBF Datasheet

IRF6631PBF

Manufacturer Part Number

IRF6631PBF

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF6631PBF.pdf (10 pages)

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to

reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-

ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that

are critical in synchronous buck converter’s CtrlFET sockets.

‚

Notes:

www.irf.com

Absolute Maximum Ratings

RoHs Compliant

Lead-Free (Qualified up to 260°C Reflow)

Application Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Switching and Conduction Losses

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 25°C

T J = 125°C

Ãg

Parameter

I D = 13A

@ 10V

„

…

†

30V max ±20V max 6.0mΩ@ 10V 8.3mΩ@ 4.5V

12nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

DSS

measured with thermocouple mounted to top (Drain) of part.

12.0

10.0

8.0

6.0

4.0

2.0

0.0

4.4nC

= 25°C, L = 0.24mH, R

I D = 10A

DirectFET™ Power MOSFET ‚

IRF6631TRPbF

Q G Total Gate Charge (nC)

1.1nC

gs2

V DS = 24V

V DS = 15V

IRF6631PbF

Max.

100

±20

DS(on)

10nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

7.3nC

= 10A.

oss

DS(on)

Units

1.8V

gs(th)

05/29/06

Related parts for IRF6631PBF

IRF6631PBF Summary of contents

Page 1

... The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert- ers that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that are critical in synchronous buck converter’s CtrlFET sockets. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 10V ≤ 60µs PULSE WIDTH 100 ...

Page 5

150°C 100 25° -40° 0.3 0.4 0.5 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, SQ Outline ƒ (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details ...

Page 8

DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC CODE ...

Page 9

DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6631TRPBF). For 1000 parts ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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