IRF6216 International Rectifier Corp., IRF6216 Datasheet
IRF6216
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IRF6216 Summary of contents
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... SMPS MOSFET V DSS -150V 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– „ ––– 94297 IRF6216 ® HEXFET Power MOSFET R max I DS(on) D 0.240 @V =-10V -2. SO-8 Max. ...
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... IRF6216 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...
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... Fig 3. Typical Transfer Characteristics www.irf.com 100 TOP BOTTOM ° C 0.1 0.1 100 Fig 2. Typical Output Characteristics 2 2.0 ° 150 C J 1.5 1.0 0.5 0.0 -60 -40 7.5 8.0 Fig 4. Normalized On-Resistance IRF6216 VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -5.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -2. -10V GS - 100 ...
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... IRF6216 10000 0V, C iss = rss = oss = Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.4 0.6 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF6216 D.U. µ d(on) r d(off Notes: 1 ...
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... IRF6216 0.23 0. -10V 0.21 0.20 0. Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50K . 12V . D.U. -3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform -20V ...
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... SO-8 Part Marking www.irf.com ° (. IRF6216 ILLIM .05 32 .06 88 1 ...
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... IRF6216 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO ION ILL (INC & ...