IRLML2502

Manufacturer Part NumberIRLML2502
ManufacturerInternational Rectifier Corp.
IRLML2502 datasheet
 
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Ultra Low On-Resistance
N-Channel MOSFET
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SOT-23 Footprint
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Low Profile (<1.1mm)
Available in Tape and Reel
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Fast Switching
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambientƒ
θJA
www.irf.com
HEXFET Power MOSFET
G
1
3
D
2
S
Micro3
Max.
@ 4.5V
GS
@ 4.5V
GS
1.25
0.01
-55 to + 150
Typ.
75
V
= 20V
DSS
R
= 0.045Ω
DS(on)
Units
20
V
4.2
3.4
A
33
0.8
W/°C
± 12
V
°C
Max.
Units
100
1
04/30/03

IRLML2502 Summary of contents