MRF630 Advanced Semiconductor, Inc., MRF630 Datasheet

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MRF630

Manufacturer Part Number
MRF630
Description
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
DESCRIPTION:
The
UHF large signal, FM Land Mobile
Applications up to 512 MHz.
FEATURES:
MAXIMUM RATINGS
CHARACTERISTICS
V
V
P
V
Grounded Emitter
P
Omnigold™ Metalization System
T
SYMBOL
T
I
DISS
CEO
CES
EBO
STG
G
JC
C
BV
BV
BV
J
ASI MRF630
= 9.5 dB at 3.0 W/470 MHz
C
I
h
P
CES
FE
OB
CEO
EBO
CES
G
C
8.75 W @ T
NPN SILICON RF POWER TRANSISTOR
-65 °C to +200 °C
-65 °C to +200 °C
I
I
I
V
V
V
V
C
C
E
CE
CE
CB
CC
= 50 mA
= 50 mA
= 1.0 mA
20 °C/W
= 12.5 V
= 5.0 V
= 12.5 V
= 12.5 V
is Designed for
1.0 A
4.0 V
16 V
36 V
C
NONETEST CONDITIONS
T
= 25 °C
C
= 25 °C
P
I
OUT
C
= 100 mA
= 3.0 W
Specifications are subject to change without notice.
f = 1.0 MHz
f = 470 MHz
PACKAGE STYLE TO 205AD
MINIMUM TYPICAL MAXIMUM
FAX (818) 765-3004
4.0
9.5
16
36
20
10.8
8.0
55
1 = COLLECTOR
2 = BASE
3 = EMITTER
DIM
G
M
A
B
C
D
E
H
K
P
R
F
J
L
12.70 19.05 0.500 0.750
MILLIMETERS
9.02
8.01
4.20
0.44
0.44
0.41
0.72
0.74
6.35
2.54
MIN
5.08 BSC
--
45° BSC
1.0
12
9.29 0.355 0.366
8.50 0.315 0.335
4.57 0.165 0.180
0.53 0.017 0.021
0.88 0.017 0.035
0.48 0.016 0.019
0.86 0.028 0.034
0.01 0.029 0.040
1.27
MAX
MRF630
--
--
0.25
0.10
MIN
0.200 BSC
45 °BSC
--
UNITS
INCHES
mA
REV. A
pF
dB
---
%
V
V
V
1/1
0.050
MAX
--
--

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