MRF630

Manufacturer Part NumberMRF630
ManufacturerAdvanced Semiconductor, Inc.
MRF630 datasheet
 
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
ASI MRF630
The
is Designed for
UHF large signal, FM Land Mobile
Applications up to 512 MHz.
FEATURES:
Grounded Emitter
P
= 9.5 dB at 3.0 W/470 MHz
G
Omnigold™ Metalization System
MAXIMUM RATINGS
1.0 A
I
C
16 V
V
CEO
V
36 V
CES
V
4.0 V
EBO
P
8.75 W @ T
= 25 °C
C
DISS
-65 °C to +200 °C
T
J
-65 °C to +200 °C
T
STG
20 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
NONETEST CONDITIONS
I
= 50 mA
BV
CEO
C
BV
I
= 50 mA
C
CES
I
= 1.0 mA
BV
E
EBO
I
V
= 12.5 V
CE
CES
V
= 5.0 V
h
CE
FE
C
V
= 12.5 V
CB
OB
P
G
V
= 12.5 V
CC
C
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
PACKAGE STYLE TO 205AD
I
= 100 mA
C
f = 1.0 MHz
P
= 3.0 W
f = 470 MHz
OUT
Specifications are subject to change without notice.
MRF630
MILLIMETERS
DIM
MIN
MAX
A
9.02
9.29 0.355 0.366
B
8.01
8.50 0.315 0.335
C
4.20
4.57 0.165 0.180
D
0.44
0.53 0.017 0.021
E
0.44
0.88 0.017 0.035
F
0.41
0.48 0.016 0.019
G
5.08 BSC
H
0.72
0.86 0.028 0.034
J
0.74
0.01 0.029 0.040
K
12.70 19.05 0.500 0.750
L
6.35
M
45° BSC
P
--
1.27
R
2.54
1 = COLLECTOR
2 = BASE
3 = EMITTER
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20
8.0
12
9.5
10.8
55
FAX (818) 765-3004
INCHES
MIN
MAX
0.200 BSC
--
0.25
--
45 °BSC
--
0.050
--
0.10
--
UNITS
V
V
V
mA
---
pF
dB
%
REV. A
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