AM29F010B-70EC Advanced Micro Devices, AM29F010B-70EC Datasheet
AM29F010B-70EC
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AM29F010B-70EC Summary of contents
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FINAL Am29F010 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 V 10% for read, erase, and program operations — Simplifies system-level power requirements High performance — 45 ...
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GENERAL DESCRIPTION The Am29F010 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes. The Am29F010 is offered in 32-pin PLCC, TSOP, and PDIP packages. The byte- wide data appears on DQ0-DQ7. The device is de- signed to ...
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PRODUCT SELECTOR GUIDE Family Part Number Speed Option V = 5.0 V 10% CC Max Access Time (ns) CE# Access (ns) OE# Access (ns) Note: See the AC Characteristics section for full specifications. BLOCK ...
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CONNECTION DIAGRAMS A16 2 A15 3 30 A12 PDIP DQ0 ...
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PIN CONFIGURATION A0–A16 = 17 Addresses DQ0–DQ7 = 8 Data Inputs/Outputs CE# = Chip Enable OE# = Output Enable WE# = Write Enable = +5.0 Volt Single Power Supply V CC (See Product Selector Guide for speed options and voltage ...
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ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below. Am29F010 -70 E DEVICE NUMBER/DESCRIPTION Am29F010 1 Megabit (128 K x ...
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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches ...
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Program and Erase Operation Status During an erase or program operation, the system may check the status of the operation by reading the status bits on DQ7–DQ0. Standard read cycle timings and I read specifications apply. Refer to “Write Operation ...
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Table 3. Am29F010 Autoselect Codes (High Voltage Method) Description CE# Manufacturer ID: AMD L Device ID: Am29F010 L Sector Protection Verification Logic Low = Logic High = V IL Sector Protection/Unprotection The hardware ...
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COMMAND DEFINITIONS Writing specific address and data commands or se- quences into the command register initiates device op- erations. The Command Definitions table defines the valid register command sequences. Writing incorrect address and data values or writing them in the ...
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Write Program Command Sequence from System Embedded Program algorithm in progress Verify Data? No Increment Address Last Address? Programming Note: See the appropriate Command Definitions table for program command sequence. Figure 1. Program Operation Chip Erase Command Sequence Chip erase ...
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If the time between additional sector erase commands can be assumed to be less than 50 s, the system need not monitor DQ3. Any command during the time-out period resets the device to reading array data. The system must ...
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Command Sequence (Note 1) Read (Note 4) Reset (Note 5) Manufacturer ID Device ID Autoselect (Note 6) Sector Protect Verify (Note 7) Program Chip Erase Sector Erase Legend Don’t care RA = Address of the memory location to ...
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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ3, DQ5, DQ6, and DQ7. Table 5 and the following subsections describe the functions of these bits. DQ7 and DQ6 each offer a ...
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DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete. Toggle Bit I may be read at any address, and is valid after the rising edge of the ...
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DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase cycle was ...
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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +125 C Ambient Temperature with Power Applied . . . . . . . . ...
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DC CHARACTERISTICS TTL/NMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current Active Current (Note 1) CC1 Active Current (Notes 2, 3) CC2 ...
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DC CHARACTERISTICS (continued) CMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current Active Current (Note 1) CC1 Active Current (Notes 2, 3) ...
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TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalent Figure 7. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted 20 Table 6. Test Specifications 5.0 V Test Condition Output Load ...
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AC CHARACTERISTICS Read-only Operations Characteristics Parameter Symbol JEDEC Std. Parameter Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output ...
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AC CHARACTERISTICS Erase and Program Operations Parameter Symbol JEDEC Standard t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH DS ...
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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# t GHWL OE# WE Data t VCS V CC Note program address program data, D Erase Command Sequence (last two cycles) ...
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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 Note Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array ...
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AC CHARACTERISTICS Erase and Program Operations Alternate CE# Controlled Writes Parameter Symbol JEDEC Standard t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data ...
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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data Notes Program Address Program Data Sector Address, DQ7# = Complement of Data Input, D ...
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LATCHUP CHARACTERISTIC Parameter Description Input Voltage with respect I/O pins SS V Current CC Note: Includes all pins except V . Test conditions TSOP PIN CAPACITANCE Parameter Symbol Parameter Description C Input Capacitance IN C ...
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PHYSICAL DIMENSIONS PD 032 32-Pin Plastic DIP (measured in inches) 1.640 1.680 32 Pin 1 I.D. .045 .005 MIN .065 .140 .225 .090 .110 .120 .160 PL 032 32-Pin Plastic Leaded Chip Carrier (measured in inches) .485 .447 .495 .453 ...
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PHYSICAL DIMENSIONS (continued) TS 032 32-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I.D. 1 1.20 MAX 0.25MM (0.0098") BSC 18.30 18.50 19.80 20.20 0° 5° Am29F010 0.95 1.05 7.90 8.10 0.50 BSC 0.05 0.15 0.08 16-038-TSOP-2 ...
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PHYSICAL DIMENSIONS (continued) TSR 032 32-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I.D. 1 1.20 MAX 0.25MM (0.0098") BSC 30 18.30 18.50 19.80 20.20 0° 5° 0.50 0.70 Am29F010 0.95 1.05 7.90 8.10 0.50 BSC 0.05 ...
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... Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...