IRF540NS International Rectifier Corp., IRF540NS Datasheet

no-image

IRF540NS

Manufacturer Part Number
IRF540NS
Description
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 44 mOhm, ID = 33A
Manufacturer
International Rectifier Corp.
Datasheet

Specifications of IRF540NS

Dc
N/A
Case
TO-263

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540NS
Manufacturer:
ST
0
Part Number:
IRF540NS
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF540NS
Quantity:
441
Part Number:
IRF540NS/IR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF540NSHR
Manufacturer:
XILINX
Quantity:
101
Part Number:
IRF540NSPBF
Manufacturer:
IR
Quantity:
21 400
Part Number:
IRF540NSPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF540NSPBF
Quantity:
180
Part Number:
IRF540NSTRL
Manufacturer:
IR
Quantity:
6 832
Part Number:
IRF540NSTRLPBF
Manufacturer:
IR
Quantity:
21 400
Part Number:
IRF540NSTRLPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF540NSTRLPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
800
Part Number:
IRF540NSTRLPBF
Quantity:
90
Part Number:
IRF540NSTRLPBF
0
Company:
Part Number:
IRF540NSTRLPBF
Quantity:
800
Company:
Part Number:
IRF540NSTRLPBF
Quantity:
20 000
Part Number:
IRF540NSTRPBF
Manufacturer:
TI
Quantity:
201
Company:
Part Number:
IRF540NSTRPBF
Quantity:
2 000
Thermal Resistance
l
l
l
l
l
l
Absolute Maximum Ratings
Advanced HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
2
J
STG
D
GS
AR
θJC
θJA
Pak is suitable for high current applications because of
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
2
Pak is a surface mount power package capable of
C
C
C
= 25°C
= 100°C
= 25°C
This benefit, combined with the fast
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Junction-to-Ambient (PCB mount)**
®
Power MOSFETs from
Parameter
Parameter

‡
ƒ‡
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
IRF540NS
S
D
D
Max.
0.87
110
130
± 20
7.0
2
33
23
16
13
Pak
IRF540NS
IRF540NL
®
R
Power MOSFET
V
Max.
DS(on)
1.15
40
DSS
I
D
IRF540NL
= 33A
PD - 91342B
TO-262
= 100V
= 44mΩ
Units
Units
°C/W
W/°C
V/ns
mJ
°C
W
A
V
A
1

Related parts for IRF540NS

IRF540NS Summary of contents

Page 1

... Typ 91342B IRF540NS IRF540NL ® HEXFET Power MOSFET 100V DSS R = 44mΩ DS(on 33A Pak TO-262 IRF540NS IRF540NL Max. Units 110 130 W 0.87 W/°C ± 7.0 V/ns - 175 °C 10 lbf•in (1.1N•m) Max ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

1MHz iss rss gd 2500 oss iss 2000 1500 1000 C oss 500 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V 0.01 Ω Charge 6 400 15V DRIVER 300 + 200 A 100 V ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G 6TT@H7G` `@6SÃÃ2Ã! GPUÃ8P @ X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ Q6SUÃIVH7@S 6U@Ã8P @ `@6SÃÃ2Ã! ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR www.irf.com 9 ...

Page 10

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords