BLF2043

Manufacturer Part NumberBLF2043
ManufacturerNXP Semiconductors
BLF2043 datasheet
 
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APPLICATIONS

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Philips Semiconductors
UHF power LDMOS transistor
FEATURES
Typical 2-tone performance at a supply voltage of 26 V
and I
of 85 mA:
DQ
– Output power = 10 W (PEP)
– Gain = 12 dB
– Efficiency = 36.5%
– dim = 32 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 2200 MHz)
No internal matching for broadband operation.

APPLICATIONS

RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
HF to 2200 MHz frequency range
Broadcast drivers.
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at T
= 25 C in a common source test circuit.
h
MODE OF OPERATION
CW, class-AB (2-tone)
f
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V
drain-source voltage
DS
V
gate-source voltage
GS
I
drain current (DC)
D
T
storage temperature
stg
T
junction temperature
j
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 10
PINNING - SOT538A
f
V
DS
(MHz)
(V)
= 2000; f
= 2000.1
26
2
CONDITIONS
CAUTION
2
Product specification
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to mounting base
1
3
2
Top view
Fig.1 Simplified outline.
P
G
L
p
D
(W)
(dB)
(%)
10 (PEP)
12.5
36.5
MIN.
MAX.
75
15
2.2
65
+150
200
BLF2043
MBK905
d
im
(dBc)
32
UNIT
V
V
A
C
C